Preliminary Data Sheet
High speed Driver with bootstrapping for
dual Power MOSFETs
TDA21101
P-DSO-8
Features
•
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•
•
•
•
•
•
•
•
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Fast rise and fall times for frequencies up to 2 MHz
Capable of sinking and sourcing of more than 4 A peak current for lowest
switching losses
Charges High Side (internally clamped to 10 V) and Low Side MOSFET´s gates
up to 12 V for lowest on-losses
Adjustable High Side MOSFET gate drive voltage via high impedance PVCC pin
for optimizing ON losses, gate drive losses, and switching losses
Integrates the bootstrap diode for reducing the part count
Prevents from cross-conducting by adaptive gate drive control
Protects the driver against over-temperature
Supports shut-down mode for very low quiescent current through three-state input
Compatible to standard PWM controller ICs
Floating High Side MOSFET drive up to 30 V
Operates with V
PVCC
= 5 to 12 V
±
10 %
à
requires no separate supply voltage
1:1 compatible to HIP6601A and HIP6601B
Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s and
Notebook CPU supplies
Package
P-DSO-8
Marking
21101G
Ordering Code
Q67042-S4170-A101
Type
TDA21101
Pinout
Number Name
1
GATE
HS
2
BOOT
Top View
GATE
HS
1
BOOT
PWM
GND
2
3
4
8
7
6
5
PHASE
P
VCC
V
CC
GATE
LS
3
4
5
6
7
8
PWM
GND
GATE
LS
VCC
PVCC
PHASE
Description
Gate drive output for the N-Channel
High side MOSFET
Floating bootstrap pin. To be
connected to the external bootstrap
capacitor to generate the gate drive
voltage for the high side N-Channel
MOSFET
Input for the PWM controller signal
Ground
Gate drive output for the N-Channel
Low Side MOSFET
Supply voltage
High impedance input to adjust the
High Side gate drive
This pin connects to the junction of
the High Side and the Low Side
MOSFET
2002-03-28
Page 1
Preliminary Data Sheet
TDA21101
General Description
The dual high speed driver is designed to drive a wide range of N-Channel low side
and N-Channel high side MOSFETs with varying gate charges. It has a small
propagation delay from input to output, short rise and fall times and the same pin
configuration to be compatible to HIP6601. In addition it provides several protection
features as well as a shut down mode for efficiency reasons. The high breakdown
voltage makes it suitable for mobile applications.
Target application
The dual high speed driver is designed to work well in half-bridge type circuits where
dual N-Channel MOSFETs are utilized. A circuit designer can fully take advantage of
the driver´s capabilities in high-efficiency, high-density synchronous DC/DC
converters that operate at high switching frequencies, e.g. in multi-phase converters
for CPU supplies on motherboards and VRM´s but also in motor drive and class-D
amplifier type applications.
Absolute Maximum Ratings
At Tj = 25 °C, unless otherwise specified
Parameter
Voltage supplied to ‘VCC’ pin
Voltage supplied to ‘PVCC’ pin
Voltage supplied to ‘PWM’ pin
Voltage supplied to ‘BOOT’ pin referenced to ‘PHASE’
(clamped by the TDA21101 to 10 V when PVCC > 10 V)
Voltage rating at ‘PHASE’ pin, DC
Junction temperature
Storage temperature
ESD Rating; Human Body Model
IEC climatic category; DIN EN 60068-1
Thermal Characteristic
Parameter
Thermal resistance, junction-soldering point
Thermal resistance, junction-ambient
Symbol
V
VCC
V
PVCC
V
PWM
V
BOOT
–
V
PHASE
V
PHASE
T
J
T
S
Value
Unit
Min. Max.
-0.3
-0.3
-0.3
-0.3
-15
20
20
6.5
10
V
30
150
-55 150
4
55/150/56
°C
kV
-
Symbol
Values
Unit
Min. Typ. Max.
90
K/W
125
Page 2
2002-03-28
Preliminary Data Sheet
TDA21101
Electrical Characteristic
At Tj = 25 °C, unless otherwise specified
Parameter
Supply Characteristic
Bias supply current
Quiescent current
Power supply current
Symbol
Conditions
Values
Unit
Min. Typ. Max.
9.0
4.5
-500
500
12
mA
mA
nA
I
VCC
I
VCCQ
I
PVCC
Under-voltage lockout
9.0
9.5
10
V
Under-voltage lockout
8.15 8.8 9.15
V
Input Characteristic
Current in ‘PWM’ pin
I
PWM_L
V
_PWM
= 0.4 V
-120
µA
Current in ‘PWM’ pin
I
PWM_H
V
_PWM
= 4.5 V
180
Shut down window
V
IN_SHUT
t_
SHUT
> 600 ns
1.8
3.0
V
Shut down hold-off
t_
SHUT
320 450 600
ns
1.8 V
≤
V
PWM
≤
3.0 V
time
PWM pin open *
V
PWM_O
1.8
2.0
2.2
PWM Low level
V
PWM_L
1.2
2.5
threshold
V
PWM High level
V
PWM_H
2.5
3.9
threshold
*
The driver IC will shut down and the High side MOSFET and the Low side MOSFET will be turned-
off when the PWM input is open (e.g. PWM input disconnected or the PWM IC in a high-Z state)
At Tj = 25 °C, unless otherwise specified
f = 250 kHz,
V
PVCC
= V
VCC
= 12 V
1.8 V
≤
V
PWM
≤
3.0 V
0.1
≤
f
≤
2 MHz,
5 V
≤
V
PVCC
≤
12 V
V
VCC
rising threshold
V
VCC
falling threshold
Dynamic Characteristic
Turn-on propagation
t
d(ON)_HS
Delay High Side
Turn-off propagation t
d(OFF)_HS
delay High Side
Rise time High Side
t
r_HS
Fall time High Side
t
f_HS
Turn-on propagation
t
d(ON)_LS
Delay Low Side
Turn-off propagation
t
d(OFF)_LS
delay Low Side
Rise time Low Side
t
r_LS
Fall time Low Side
t
f_LS
Turn-on propagation
t
d(ON)_HS
Delay High Side
Turn-off propagation t
d(OFF)_HS
delay High Side
Rise time High Side
t
r_HS
Fall time High Side
t
f_HS
Turn-on propagation
t
d(ON)_LS
Delay Low Side
58
40
P
PVCC
= V
VCC
= 12 V
C
ISS
= 3000 pF
18
18
40
30
19
17
80
60
P
PVCC
= V
VCC
= 12 V
C
ISS
= 3000 pF
T
J
= 125 °C
18
21
50
70
50
34
30
60
40
32
25
ns
ns
Page 3
2002-03-28
Preliminary Data Sheet
Turn-off propagation
delay Low Side
Rise time Low Side
Fall time Low Side
Operating Conditions
At Tj = 25 °C, unless otherwise specified
TDA21101
43
21
20
t
d(OFF)_LS
t
r_LS
t
f_LS
Parameter
Voltage supplied to
‘VCC’ pins
Voltage supplied to
‘PVCC’ pins
Input signal transition
frequency
Power dissipation
Thermal shut down
Junction temperature
Parameter
Symbol
V
VCC
V
PVCC
f
P
TOT
T
OT
T
J
Conditions
Values
Unit
Min. Typ. Max.
10.8
5
0.1
13.2
13.2
2
0.8
150°
V
V
MHz
W
°C
°C
T
A
= 25 °C, T
J
= 125 °C
(Hysteresis = 50 °C)
135
-25
165
125
At Tj = 25 °C, unless otherwise specified
Values
Unit
Min. Typ. Max.
Output Characteristic High Side (HS) and Low Side (LS), ensured by design
Output
HS; Source *
P
PVCC
= V
VCC
= 12 V
2.15
V
Resistance and
I
_HS_SRC
= 2 A
Voltage drop
HS; Sink
V
VCC
= 12 V, P
PVCC
= 5 V
1.2
1.9
Ω
resp.
HS; Sink
P
PVCC
= V
VCC
= 12 V
0.95 1.5
LS; Source *
P
PVCC
= V
VCC
= 12 V
2.15
V
I
_HS_SRC
= 2 A
LS; Sink
P
PVCC
= V
VCC
= 12 V
0.7
1.0
Ω
HS; Source *
P
PVCC
= V
VCC
= 12 V
1.65
V
I
_HS_SRC
= 2 A, T
J
= 125 °C
Output
HS; Sink
V
VCC
= 12 V, P
PVCC
= 5 V
1.9
Resistance and
T
J
= 125 °C
Ω
Voltage drop
HS; Sink
P
PVCC
= V
VCC
= 12 V
1.5
resp. (@ 125 °C)
T
J
= 125 °C
LS; Source *
P
PVCC
= V
VCC
= 12 V
1.65
V
I
_HS_SRC
= 2 A, T
J
= 125 °C
LS; Sink
P
PVCC
= V
VCC
= 12 V
1.1
Ω
T
J
= 125 °C
HS; Source *
P
PVCC
= V
VCC
= 12 V
4
Peak output-
D<3%
A
HS; Sink
4
current
t_
P
/ Pulse < 30 ns
LS; Source *
4
LS; Sink
4
*
The sourcing outputs of the LS and the HS terminals are bipolar and MOS transistors in parallel. The
voltage drop is the voltage drop across the bipolar and MOS transistor combination; the peak output
current is the combined output current the driver can deliver.
Conditions
Page 4
2002-03-28
Preliminary Data Sheet
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
©
Infineon Technologies AG 1999
All Rights Reserved.
TDA21101
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives
worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system Life support devices or systems are intended to be implanted in
the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Page 5
2002-03-28
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