SN7002N
SIPMOS
®
Small-Signal-Transistor
Feature
•
N-Channel
•
Enhancement mode
•
Logic Level
•
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
60
5
0.2
PG-SOT-23
Drain
pin 3
Gate
pin1
Source
pin 2
V
Ω
A
•
Qualified according to AEC Q101
Type
SN7002N
SN7002N
Package
PG-SOT-23
PG-SOT-23
Pb-free
Yes
Yes
Tape and Reel Information
L6327: 3000 pcs/reel
L6433: 10000 pcs/reel
Marking
sSN
sSN
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T
A
=25°C
T
A
=70°C
Value
0.2
0.16
Unit
A
I
D
Pulsed drain current
T
A
=25°C
I
D puls
dv/dt
V
GS
P
tot
T
j ,
T
stg
0.8
6
±20
0 (<250V)
0.36
-55... +150
55/150/56
W
°C
kV/µs
V
Reverse diode dv/dt
I
S
=0.2A,
V
DS
=48V, di/dt=200A/µs,
T
jmax
=150°C
Gate source voltage
ESD Class (JESD22-A114-HBM)
Power dissipation
T
A
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 2.5
Page 1
2009-14-08
SN7002N
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - ambient
at minimal footprint
R
thJA
-
-
350
K/W
Symbol
min.
Values
typ.
max.
Unit
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
60
0.8
Values
typ.
-
1.4
max.
-
1.8
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=26µA
Zero gate voltage drain current
V
DS
=60V,
V
GS
=0,
T
j
=25°C
V
DS
=60V,
V
GS
=0,
T
j
=150°C
µA
-
-
-
3.9
2.5
0.1
5
10
7.5
5
nA
Ω
Gate-source leakage current
V
GS
=20V,
V
DS
=0
Drain-source on-state resistance
V
GS
=4.5V,
I
D
=0.17A
Drain-source on-state resistance
V
GS
=10V,
I
D
=0.5A
Rev. 2.5
Page 2
2009-14-08
SN7002N
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
DD
=48V,
I
D
=0.5A,
V
GS
=0 to 10V
V
DD
=48V,
I
D
=0.5A
Symbol
Conditions
min.
Values
typ.
0.17
34
7.2
2.8
2.4
3.2
5.3
3.6
max.
-
45
9.6
4.2
3.6
4.8
8
5.4
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=0.16A
V
GS
=0,
V
DS
=25V,
f=1MHz
0.09
-
-
-
-
-
-
-
S
pF
V
DD
=30V,
V
GS
=10V,
I
D
=0.5A,
R
G
=6Ω
ns
-
-
-
-
0.14
0.42
1
4.5
0.21
0.63
1.5
-
nC
V
(plateau)
V
DD
=48V,
I
D
= 0.5 A
V
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsedI
SM
Inverse diode forward voltage
V
SD
Reverse recovery time
Reverse recovery charge
t
rr
Q
rr
V
GS
=0,
I
F
=
I
S
V
R
=30V,
I
F =
l
S
,
di
F
/dt=100A/µs
I
S
T
A
=25°C
-
-
-
-
-
-
-
0.83
14.2
5.9
0.2
0.8
1.2
21.3
8.8
A
V
ns
nC
Rev. 2.5
Page 3
2009-14-08
SN7002N
1 Power dissipation
P
tot
=
f
(T
A
)
0.38
SN7002N
2 Drain current
I
D
=
f
(T
A
)
parameter:
V
GS
≥
10 V
0.22
SN7002N
W
0.32
0.28
A
0.18
0.16
P
tot
I
D
20
40
60
80
100
120
0.24
0.2
0.16
0.14
0.12
0.1
0.08
0.12
0.06
0.08
0.04
0
0
0.04
0.02
°C
160
0
0
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A
= 25 °C
10
1
SN7002N
4 Transient thermal impedance
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
3
SN7002N
K/W
A
10
2
10
0
t
= 200.0µs
p
/
I
D
=
V
Z
thJA
I
D
DS
1 ms
10
1
10
-1
R
DS
)
(on
10 ms
10
0
D = 0.50
0.20
10
-1
0.10
0.05
0.02
10
-2
DC
10
-2
single pulse
0.01
10
-3
10
0
10
1
V
10
2
10
-3 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
Rev. 2.5
Page 4
t
p
2009-14-08
SN7002N
5 Typ. output characteristic
I
D
=
f
(V
DS
)
parameter:
T
j
= 25 °C,
V
GS
1
A
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
T
j
= 25 °C,
V
GS
7.5
0.75
0.625
10V
7V
6V
5V
4.5V
4.0V
3.7V
3.5V
3.0V
Ω
6
5.25
4.5
3.75
3
2.25
3.1V
3.5V
3.7V
4.1V
4.5V
5V
6V
7V
10V
0.5
0.375
0.25
1.5
0.125
0.75
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
RDS(on)
ID
5
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
A
1
VDS
ID
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
≥
2 x
I
D
x
R
DS(on)max
parameter:
T
j
= 25 °C
1
A
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter:
T
j
= 25 °C
0.4
S
0.8
0.3
0.7
gfs
V
ID
0.6
0.5
0.4
0.3
0.25
0.2
0.15
0.1
0.2
0.1
0
0
0.05
0.8
1.6
2.4
3.2
4
4.8
6
0
0
0.2
0.4
0.6
0.8
A
1.1
VGS
Rev. 2.5
Page 5
ID
2009-14-08
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