SIDC85D170H
Fast switching diode chip in EMCON 3 -Technology
FEATURES:
•
1700V EMCON 3 technology 200 µm chip
•
soft, fast switching
•
low reverse recovery charge
•
small temperature coefficient
A
This chip is used for:
•
EUPEC power modules
C
Applications:
•
resonant applications, drives
Chip Type
SIDC85D170H
V
R
I
F
Die Size
9.2 x 9.2 mm
2
Package
sawn on foil
Ordering Code
Q67050-A4178-
A001
1700V 150A
MECHANICAL PARAMETER:
Raster size
Area total / active
Anode pad size
Thickness
Wafer size
Flat position
Max. possible chips per wafer
Passivation frontside
Anode metallization
Cathode metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
9.2 x 9.2
84.64 / 67.8
7.18 x 7.18
200
150
180
160 pcs
Photoimide
3200 nm Al Si Cu
Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al,
≤500µm
∅
0.65mm; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
µm
mm
deg
mm
2
Edited by INFINEON Technologies AI DP PSD CLS, L 4491A, Edition 2, 2.11.2004
SIDC85D170H
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current limited by
T
jmax
Single pulse forward current
(depending on wire bond configuration)
Symbol
V
RRM
I
F
I
FSM
I
FRM
T
j
,
T
s t g
Condition
Value
1700
150
Unit
V
t
P
= 10 ms sinusoidal
740
300
-55...+150
A
Maximum repetitive forward current
limited by T
jmax
Operating junction and storage
temperature
°C
Static Electrical Characteristics
(tested on chip),
T
j=25
°C,
unless otherwise specified
Parameter
Reverse leakage current
Cathode-Anode
breakdown Voltage
Forward voltage drop
Symbol
I
R
V
Br
V
F
Conditions
V
R
= 1 7 0 0 V
I
R
= 0 . 2 5 m A
I
F
=150A
T
j
= 2 5
°
C
T
j
= 2 5 ° C
T
j
= 2 5
°
C
1700
1.8
Value
min.
Typ.
max.
27
Unit
µA
V
V
Dynamic Electrical Characteristics
,
at
T
j
= 25
°C,
unless otherwise specified, tested at component
Parameter
Peak recovery current
Symbol
I
RRM1
I
RRM2
Reverse recovery charge
Q
rr1
Q
rr2
Peak recovery energy
E
rec 1
E
rec 2
I
F
= 1 5 0 A
di/dt=770 A/µs
V
R
=900V
I
F
= 1 5 0 A
di/dt=770 A/µs
V
R
=900V
I
F
= 1 5 0 A
di/dt=770 A/µs
V
R
=900V
Conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 2 5
°
C
T
j
= 1 2 5
°
C
T
j
=
25
°
C
T
j
= 1 2 5
°
C
Value
min.
Typ.
131
max.
Unit
A
158
35.8
µC
62.3
24.2
42.9
mJ
Edited by INFINEON Technologies AI DP PSD CLS, L 4491A, Edition 2, 2.11.2004
SIDC85D170H
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
INFINEON TECHNOLOGIES /
EUPEC
tbd
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strasse 53
D-81541 München
© Infineon Technologies AG 2000
All Rights Reserved.
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characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the
health of the user or other persons may be endangered.
Edited by INFINEON Technologies AI DP PSD CLS, L 4491A, Edition 2, 2.11.2004
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