BFS360L6
NPN Silicon RF Transistor
Preliminary data
Low voltage/ Low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz
4
5
6
1
2
3
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
1
Junction - soldering point
2)
Built in 2 transitors ( TR1, TR2: die as BFR360L3)
6
T R 1
5
T R 2
4
P-TSLP-6-1
1
2
3
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BFS360L6
Maximum Ratings
Parameter
Marking
Pin Configuration
Package
FB
1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
6
15
15
2
35
4
210
150
-65 ... 150
-65 ... 150
Value
V
mA
mW
°C
101°C
Unit
230
K/W
Jun-11-2003
BFS360L6
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 15 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 15 mA,
V
CE
= 3 V
h
FE
60
130
200
-
I
EBO
-
-
1
µA
I
CBO
-
-
100
nA
I
CES
-
-
10
µA
V
(BR)CEO
6
9
-
V
typ.
max.
Unit
2
Jun-11-2003
BFS360L6
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 15 mA,
V
CE
= 3 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz, emitter grounded
Collector emitter capacitance
V
CE
= 5 V,
f
= 1 MHz, base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz, collector grounded
Noise figure
I
C
= 3 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
f
= 1,8 GHz
I
C
= 3 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
f
= 3 GHz
Power gain, maximum available
1)
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 3 GHz
Transducer gain
f
= 1.8 GHz
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
f
= 3 GHz
V
CE
= 3 V,
I
C
= 15 mA,
f
= 1.8 GHz,
1dB Compression point at output
f
= 1.8 GHz
|S
21e
|
2
,
-
,
-
IP
3
-
8
24
-
-
dBm
12
-
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
-
10
-
dB
-
14.5
-
G
ma
F
min
-
-
1
1.5
-
-
dB
C
eb
-
0.43
-
C
ce
-
0.15
-
C
cb
-
0.3
-
pF
-
14
-
Unit
GHz
Third order intercept point at output
2)
Z
S
=
Z
L
= 50
1
G
1/2
ma
= |
S
21e
/
S
12e
| (k-(k²-1) )
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
P
-1dB
,
-
9
-
3
Jun-11-2003
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