BFR949L3
NPN Silicon RF Transistor*
•
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
•
f
T
= 9 GHz,
F
= 1 dB at 1 GHz
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
* Short term description
1
2
3
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFR949L3
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
2)
T
S
≤
101 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
3)
1
Pb-containing
2
T
3
For
Marking
RK
Pin Configuration
1=B
2=E
3=C
Package
TSLP-3-1
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Value
10
20
20
1.5
50
5
250
150
-65 ... 150
-65 ... 150
Value
≤
195
Unit
V
mA
mW
°C
Unit
K/W
package may be available upon special request
S is measured on the collector lead at the soldering point to the pcb
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-26
BFR949L3
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain-
I
C
= 5 mA,
V
CE
= 6 V, pulse measured
h
FE
100
140
180
I
EBO
-
-
0.1
I
CBO
-
-
100
I
CES
-
-
100
V
(BR)CEO
10
-
-
typ.
max.
Unit
V
µA
nA
µA
-
2
2007-04-26
BFR949L3
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 15 mA,
V
CE
= 6 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 5 mA,
V
CE
= 6 V,
Z
S
=
Z
Sopt
,
f
= 1 GHz
I
C
= 3 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
Power gain
1)
I
C
= 10 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
Power gain, maximum available
1)
I
C
= 10 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Transducer gain
I
C
= 15 mA,
V
CE
= 6 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1 GHz
I
C
= 10 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
1
G
7
-
9
0.25
-
0.4
GHz
pF
C
cb
C
ce
-
0.15
-
C
eb
-
0.7
-
F
-
-
G
ms
-
1
1.3
21.5
2.5
-
-
dB
-
G
ma
-
15.5
-
dB
|S
21e
|
2
14
-
17
12
-
-
dB
1/2
ma = |
S
21 /
S
12 | (k-(k²-1) ),
G
ms = |
S
21 /
S
12|
3
2007-04-26
Package TSLP-3-1
BFR949L3
Package Outline
Top view
Bottom view
0.6
±0.05
0.5
±0.035
0.65
±0.05
1)
0.05 MAX.
3
2
1
±0.05
3
1
2
1
2 x 0.25
±0.035
0.45
1)
Pin 1
marking
0.35
±0.05
2 x 0.15
±0.035
1)
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages"
0.275
0.6
0.35
0.35
0.945
0.3
1
0.355
0.2
0.225
0.225
0.15
Copper
Solder mask
R0.1
0.2
0.17
Stencil apertures
Marking Layout (Example)
BFR193L3
Type code
Pin 1 marking
Laser marking
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
4
0.5
1.16
Pin 1
marking
0.76
8
0.315
0.25
±0.035
0.4
+0.1
1)
4
2007-04-26
BFR949L3
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
5
2007-04-26
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