BFR740L3
NPN Silicon Germanium RF Transistor
•
High gain ultra low noise RF transistor
•
Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
•
Ideal for CDMA and WLAN applications
•
Outstanding noise figure
F
= 0.5 dB at 1.8 GHz
Outstanding noise figure
F
= 0.8 dB at 6 GHz
•
High maximum stable gain
G
ms
= 24 dB at 1.8 GHz
•
Gold metallization for extra high reliability
•
150 GHz
f
T
-Silicon Germanium technology
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
1
2
3
Type
BFR740L3
Maximum Ratings
Parameter
Marking
R7
Pin Configuration
1=B
2=C
3=E
Package
TSLP-3-8
Symbol
V
CEO
Value
Unit
Collector-emitter voltage
T
A
> 0°C
T
A
≤
0°C
V
4
3.5
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
94°C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
13
13
1.2
30
3
160
150
-65 ... 150
-65 ... 150
mW
°C
mA
Junction temperature
Ambient temperature
Storage temperature
1
T
is measured on the collector lead at the soldering point to the pcb
S
1
2005-10-17
BFR740L3
Thermal Resistance
Parameter
Symbol
R
thJS
Value
≤
350
Unit
Junction - soldering point
1)
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 13 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 25 mA,
V
CE
= 3 V, pulse measured
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
Unit
max.
-
30
100
3
400
V
µA
nA
µA
-
typ.
4.7
-
-
-
250
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4
-
-
-
160
2
2005-10-17
BFR740L3
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 25 mA,
V
CE
= 3 V,
f
= 2 GHz
Collector-base capacitance
V
CB
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 3 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 8 mA,
V
CE
= 3 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
I
C
= 8 mA,
V
CE
= 3 V,
f
= 6 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 25 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 25 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 6 GHz
Transducer gain
I
C
= 25 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 1.8 GHz
f
= 6 GHz
Third order intercept point at output
2)
V
CE
= 3 V,
I
C
= 25 mA,
Z
S
=Z
L
=50
Ω
,
f
=
1
.
8 GHz
1dB Compression point at output
I
C
= 25 mA,
V
CE
= 3 V,
Z
S
=Z
L
=50
Ω
,
f
=
1
.
8 GHz
1
G
1/2
ma
= |
S
21e
/
S
12e
| (k-(k²-1) ),
G
ms
= |
S
21e
/
S
12e
|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
Ω
from 0.1 MHz to 6 GHz
-
-
42
0.1
-
0.16
GHz
pF
C
cb
C
ce
-
0.18
-
C
eb
-
0.38
-
F
-
-
G
ms
-
0.5
0.8
24
-
-
-
dB
dB
G
ma
-
14.5
-
dB
|S
21e
|
2
-
-
IP
3
P
-1dB
-
-
21.5
12
25
11
-
-
-
-
dB
dBm
3
2005-10-17
BFR740L3
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
180
mW
10
3
140
120
100
K/W
R
thJS
P
tot
10
2
80
60
40
20
0
0
10
1 -7
10
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
15
30
45
60
75
90 105 120
°C
150
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
2
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
f
= 1 MHz
0.2
P
totmax
/P
totDC
0.18
-
0.16
0.14
C [pF]
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.12
cb
0.1
0.08
0.06
0.04
0.02
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
0
t
p
0
2
4
6
8
10
12
V
CB
[V]
4
2005-10-17
BFR740L3
Third order Intercept Point
IP
3
=
ƒ
(I
C
)
(Output,
Z
S
=
Z
L
= 50
Ω
)
V
CE
= parameter,
f
= 1.8 GHz
30
50
Transition frequency
f
T
=
ƒ
(I
C
)
V
CE
= parameter,
f
= 2 GHz
27
4.00V
45
2V to 4V
40
24
3.00V
21
35
18
30
IP
3
[dBm]
15
f [GHz]
25
2.00V
12
T
20
9
15
1.00V
6
10
1.00V
3
5
0.75V
0.50V
0
0
5
10
15
20
25
30
35
0
0
5
10
15
20
25
30
35
I [mA]
C
I [mA]
C
Power gain
G
ma
,
G
ms
=
ƒ
(f)
V
CE
= 3 V,
I
C
= 25 mA
Power gain
G
ma
,
G
ms
=
ƒ
(I
C
)
V
CE
= 3 V
f
= parameter
55
34
50
32
30
45
28
40
26
35
0.90GHz
24
1.80GHz
2.40GHz
3.00GHz
4.00GHz
5.00GHz
6.00GHz
G [dB]
30
G [dB]
G
ms
|S
21
|
2
22
25
20
18
20
16
15
14
10
12
5
0
1
2
3
4
5
6
10
0
5
10
15
20
25
30
35
f [GHz]
I
C
[mA]
5
2005-10-17
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