BFG19S
NPN Silicon RF Transistor*
•
For low noise, low distortion broadband
amplifiers in antenna and telecommunication
systems up to 1.5 GHz at collector currents
from 10 mA to 70 mA
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
* Short term description
4
2
1
3
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BFG19S
Maximum Ratings
Parameter
Marking
Pin Configuration
BFG19S 1 = E 2 = B 3 = E 4 = C -
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Package
-
SOT223
Value
15
20
20
3
210
21
1
150
-65 ... 150
-65 ... 150
Value
≤
75
Unit
K/W
W
°C
mA
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
2)
T
S
≤
75°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
3)
1
Pb-containing
3
For
package may be available upon special request
2
T
is measured on the collector lead at the soldering point to the pcb
S
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2008-07-10
1
BFG19S
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 2 V,
I
C
= 0
DC current gain-
I
C
= 70 mA,
V
CE
= 8 V, pulse measured
h
FE
70
100
140
-
I
EBO
-
-
10
µA
I
CBO
-
-
100
nA
I
CES
-
-
100
µA
V
(BR)CEO
15
-
-
V
typ.
max.
Unit
2008-07-10
2
BFG19S
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 70 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Noise figure
I
C
= 20 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 70 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt,
Z
L
=
Z
Lopt
,
f
= 900 MHz
f
= 1.8 GHz
Transducer gain
I
C
= 30 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 900 MHz
f
= 1.8 GHz
Third order intercept point at output
V
CE
= 8 V,
I
C
= 70 mA,
f
= 900 MHz,
Z
S
=
Z
L
= 50
Ω
1
G
4
-
5.5
0.8
-
1.1
GHz
pF
C
cb
C
ce
-
0.4
-
C
eb
-
4.1
-
F
-
-
G
ma
-
-
|S
21e
|
2
-
-
IP
3
-
11
5.5
32
-
-
-
14
8.5
-
-
2
3
-
-
dB
dB
dBm
2 1/2
ma
= |S
21
/S
12
| (k-(k -1) )
2008-07-10
3
BFG19S
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
1200
mW
10
2
1000
900
K/W
P
tot
800
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120
°C
150
R
thJS
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
2
P
totmax
/P
totDC
-
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
2008-07-10
4
Package SOT223
BFG19S
Package Outline
A
6.5
±0.2
3
±0.1
4
1.6
±0.1
0.1 MAX.
15˚ MAX.
B
3.5
±0.2
1
2
3
7
±0.3
0.7
±0.1
4.6
0.25
M
A
2.3
0.5 MIN.
0.28
±0.04
0...10˚
Foot Print
0.25
M
B
3.5
1.4
1.2 1.1
Marking Layout (Example)
Manufacturer
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
1.4
4.8
8
0.3 MAX.
7.55
12
Pin 1
6.8
1.75
2008-07-10
5
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