BF799W
NPN Silicon RF Transistor
•
For linear broadband amplifier
application up to 500 MHz
•
SAW filter driver in TV tuners
•
Pb-free (RoHS compliant) package
3
1
2
Type
BF799W
Maximum Ratings
Parameter
Marking
LKs
1=B
Pin Configuration
2=E
3=C
Package
SOT323
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
R
thJS
Value
20
30
30
3
35
10
280
150
-65 ... 150
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T
S
= 107 °C
Junction temperature
Storage temperature
Thermal Resistance
mA
mW
°C
Junction - soldering point
1)
≤
155
K/W
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2011-09-21
BF799W
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Base-emitter breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 20 V,
I
E
= 0
DC current gain
I
C
= 5 mA,
V
CE
= 10 V
I
C
= 20 mA,
V
CE
= 10 V
Collector-emitter saturation voltage
I
C
= 20 mA,
I
B
= 2 mA
Base-emitter saturation voltage
I
C
= 20 mA,
I
B
= 2 mA
V
BEsat
-
-
0.95
V
CEsat
h
FE
35
40
-
95
100
0.1
-
250
0.3
V
-
I
CBO
-
-
100
nA
V
(BR)EBO
3
-
-
V
(BR)CBO
30
-
-
V
(BR)CEO
20
-
-
V
Symbol
min.
Values
typ.
max.
Unit
AC characteristics
Transition frequency
I
C
= 5 mA,
V
CE
= 10 V,
f
= 100 MHz
I
C
= 20 mA,
V
CE
= 8 V,
f
= 100 MHz
Output capacitance
V
CB
= 10 V,
I
E
= 0 mA,
f
= 1 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 10 V,
f
= 1 MHz
Noise figure
I
C
= 5 mA,
V
CE
= 10 V,
f
= 100 MHz,
Z
S
= 50
Ω
Output conductance
I
C
= 20 mA,
V
CE
= 10 V,
f
= 35 MHz
g
22e
-
60
-
µS
F
-
3
-
dB
C
ce
-
0.28
-
C
cb
-
0.7
-
C
ob
f
T
-
-
-
800
1100
0.96
-
-
-
pF
MHz
2
2011-09-21
BF799W
Total power dissipation
P
tot
=
f
(T
S
)
300
mW
240
220
P
tot
200
180
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
°C
150
T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
f
(t
p
)
10
3
10
2
K/W
P
totmax
/ P
totDC
-
10
2
10
1
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
0 -7
10
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
3
2011-09-21
BF799W
Transition frequency
f
T
=
f
(I
C
)
f
= 100MHz
BF 799
EHT07116
Collector-base capacitance
C
cb
=
f
(V
CB
)
f
= 1 MHz
BF 799
EHT07117
1200
f
T
MHz
1000
1.5
C
cb
pF
V
CE
= 5 V
800
1.0
600
2V
400
0.5
200
0
0
10
20
30
40 mA 50
0
0
10
V
V
CB
20
Ι
C
4
2011-09-21
Package SOT323
BF799W
Package Outline
2
±0.2
0.3
+0.1
-0.05
3
1.25
±0.1
2.1
±0.1
0.9
±0.1
3x
0.1
M
0.1 MAX.
0.1
A
1
0.65 0.65
2
0.1 MIN.
0.15
+0.1
-0.05
0.2
M
A
Foot Print
0.6
0.8
0.65
0.65
Marking Layout (Example)
Manufacturer
1.6
2005, June
Date code (YM)
Pin 1
BCR108W
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
Pin 1
2.15
2.3
8
1.1
5
2011-09-21
stm32/stm8
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