VS-C4ZU6006FP-E3
www.vishay.com
Vishay Semiconductors
Ultrafast Soft Recovery Diode,
2 x 30 A FRED Pt
®
Gen 4
FEATURES
• Gen 4 FRED Pt technology
• Low I
RRM
and reverse recovery charge
• Very low forward voltage drop
1
Anode
1
2
3
2
Common
cathode
3
Anode
• Polyimide passivated chip for high reliability
standard
• Fully isolated package (V
INS
= 2500 V
RMS
)
• 175 °C operating junction temperature
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-3PF
PRODUCT SUMMARY
Package
I
F(AV)
per leg
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-3PF
30 A
600 V
1.20 V
37 ns
175 °C
Common cathode
DESCRIPTION
Gen 4 Fred Pt technology, state of the art, ultralow V
F
, soft
switching optimized for Discontinuous (Critical) Mode (DCM)
and IGBT F/W diode.
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current, per leg
Non-repetitive peak surge current, per leg
Operating junction and storage temperature
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 75 °C
T
C
= 25 °C, t
p
= 8.3 ms half sine wave
TEST CONDITIONS
MAX.
600
30
255
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
V
BR
, V
R
TEST CONDITIONS
I
R
= 100 μA
I
F
= 30 A
Forward voltage
V
F
I
F
= 50 A
I
F
= 30 A, T
J
= 150 °C
I
F
= 50 A, T
J
= 150 °C
Reverse leakage current
Junction capacitance
I
R
C
T
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.4
1.56
1.20
1.43
-
-
19
MAX.
-
1.65
1.97
1.45
-
50
500
-
μA
pF
V
UNITS
Revision: 26-Jul-16
Document Number: 95642
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-C4ZU6006FP-E3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time, per leg
SYMBOL
t
rr
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current, per leg
Reverse recovery charge, per leg
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 30 A
dI
F
/dt = 1000 A/μs
V
R
= 400 V
MIN.
-
-
-
-
-
-
-
TYP.
36
70
100
17
30
800
1800
MAX.
-
-
-
-
-
-
-
A
nC
ns
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Weight
Mounting torque
Marking device
Case style TO-3PF
SYMBOL
R
thJC
R
thCS
TEST CONDITIONS
MIN.
-
-
-
-
4.0
(3.5)
TYP.
-
0.4
6.0
0.21
-
MAX.
2.4
-
-
-
6.0
(5.3)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C/W
C4ZU6006FP
I
F
- Instantaneous Forward Current (A)
1000
1000
175 °C
I
R
- Reverse Current (μA)
100
10
1
150 °C
100
125 °C
T
J
= 175 °C
10
T
J
= 150°C
T
J
= 125°C
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 °C
0.1
0.01
0.001
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 26-Jul-16
Document Number: 95642
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-C4ZU6006FP-E3
www.vishay.com
Vishay Semiconductors
1000
C
T
- Junction Capacitance (pF)
100
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
0.50
0.20
0.10
0.05
0.02
0.01
1
single
pulse
0.1
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
200
70
RMS limit
Allowable Case Temperature (°C)
150
DC
100
Average Power Loss (W)
60
50
40
30
20
10
0
D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
50
Square
wave (D = 0.50)
100 % rated V
R
applied
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
40
45
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 26-Jul-16
Document Number: 95642
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-C4ZU6006FP-E3
www.vishay.com
Vishay Semiconductors
2000
1800
1600
1400
1200
300
280
260
240
220
200
180
160
140
120
100
80
60
100
1000
25 °C
125 °C
t
rr
(us)
Q
rr
(nC)
125 °C
1000
800
600
400
200
0
100
1000
25 °C
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
-
-
C
2
4
3
Z
4
U
5
60
6
06
7
FP
8
-E3
9
Vishay Semiconductors product
Circuit configuration:
C = common cathode
-
-
-
-
FRED Pt Gen 4
Z = TO-3PF package
Process type:
U = ultrafast recovery
Current rating (60 = 2 x 30 A)
7
8
9
-
-
-
Voltage rating (06 = 600 V)
FULL-PAK
Environmental digit:
RoHS-compliant, terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-C4ZU6006FP-E3
QUANTITY PER TUBE
30
MINIMUM ORDER QUANTITY
1200
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-3PF
TO-3PF
www.vishay.com/doc?95646
www.vishay.com/doc?95699
Revision: 26-Jul-16
Document Number: 95642
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000