S i 4 3 11
315/433.92 MH
Z
FSK R
ECEIVER
Features
Single chip receiver with only six
external components
Selectable 315/433.92 MHz carrier
frequency
Supports FSK modulation
High sensitivity (–104 dBm @ 5 kbps)
Excellent interference rejection
Selectable IF bandwidths
Automatic Frequency Centering (AFC)
Data rates up to 10 kbps
Direct battery operation with on-
chip low drop out (LDO) voltage
regulator
16 MHz crystal oscillator support
3x3x0.85 mm 20L QFN package
(RoHS compliant)
–40 to +85 °C temperature range
Applications
Ordering Information:
See page 14.
Satellite set-top box receivers
Remote controls, IR
replacement/extension
Garage and gate door openers
Home automation and security
Remote keyless entry
After market alarms
Telemetry
Wireless point of sale
Toys
Pin Assignments
Si4311
(Top View)
DEV0
17
10
XTL2
DEV1
16
15 BT0
14 BT1
13 DOUT
12 GND
7
GND
8
VDD
9
XTL1
11 VDD
NC
NC
19
NC
18
Description
The Si4311 is a fully-integrated FSK CMOS RF receiver that operates in the
unlicensed 315 and 433.92 MHz ultra high frequency (UHF) bands. It is designed
for high-volume, cost-sensitive RF receiver applications, such as set-top box RF
receivers, remote controls, garage door openers, home automation, security,
remote keyless entry systems, wireless POS, and telemetry. The Si4311 offers
industry-leading RF performance, high integration, flexibility, low BOM, small
board area, and ease of design. No production alignment is necessary as all RF
functions are integrated into the device.
VDD
1
RFGND 2
RX_IN 3
RST 4
AFC 5
6
315/434
20
GND
PAD
Functional Block Diagram
Antenna
RX_IN
LNA
AGC
2.7 – 3.6 V
VDD
GND
LDO
AFC
XTAL
OSC
PGA
ADC
ADC
Si4311
DOUT
DSP
MCU
BASEBAND
PROCESSOR
SQUELCH
Patents pending
AFC
315/434
DEV[1:0]
BT[1:0]
RST
16 MHz
Rev. 0.5 3/10
Copyright © 2010 by Silicon Laboratories
Si4311
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
Si4311
T
ABLE O F
C
ONTENTS
Section
Page
1. Electrical Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
2. Typical Application Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
2.1. Typical Application Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3. Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.1. Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.2. Receiver Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.3. Carrier Frequency Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.4. Bit Time BT[1:0] Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.5. Frequency Deviation Selection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3.6. Automatic Frequency Centering (AFC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
3.7. Low Noise Amplifier Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
3.8. Crystal Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
3.9. Reset Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4. Pin Descriptions: Si4311-B10-GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5. Ordering Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6. Package Markings (Top Marks) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6.1. Si4311 Top Mark . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6.2. Top Mark Explanation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7. Package Outline: Si4311-B10-GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
8. PCB Land Pattern: Si4311-B10-GM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Document Change List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Contact Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Rev. 0.5
3
Si4311
1. Electrical Specifications
Table 1. Recommended Operating Conditions*
Parameter
Supply Voltage
Supply Voltage Powerup Rise Time
Ambient Temperature
Symbol
V
DD
V
DD-RISE
T
A
Test Condition
Min
2.7
10
–40
Typ
3.3
—
25
Max
3.6
—
85
Unit
V
μs
°C
*Note:
All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at V
DD
= 3.3 V and 25
C
unless otherwise stated. Parameters are tested in production unless
otherwise stated.
Table 2. Absolute Maximum Ratings
1,2
Parameter
Supply Voltage
Input Current
3
Input Voltage
3
Operating Temperature
Storage Temperature
RF Input Level
4
Symbol
V
DD
I
IN
V
IN
T
OP
T
STG
Value
–0.5 to 3.9
10
–0.3 to (V
DD
+ 0.3)
–45 to 95
–55 to 150
0.4
Unit
V
mA
V
C
C
V
PK
Notes:
1.
Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended
operating conditions for extended periods may affect device reliability.
2.
The Si4311 device is a high-performance RF integrated circuit with certain pins having an ESD rating of < 2 kV HBM.
Handling and assembly of this device should only be done at ESD-protected workstations.
3.
For input pins 315/434, AFC, BT[1:0], and DEV[1:0].
4.
At RF input pin RX_IN.
4
Rev. 0.5
Si4311
Table 3. DC Characteristics
(T
A
= 25 °C, V
DD
= 3.3 V, R
s
= 50
Ω,
F
RF
= 433.92 MHz unless otherwise noted)
Parameter
Supply Current
Reset Supply Current
High Level Input Voltage
1
Low Level Input Voltage
1
High Level Input Current
1
Low Level Input Current
1
High Level Output Voltage
2
Low Level Output Voltage
2
Symbol
I
VDD
I
RST
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
Test Condition
Min
—
Typ
20
2
—
—
—
—
—
—
Max
—
TBD
V
DD
+ 0.3
0.3 x V
DD
10
10
—
0.2 x V
DD
Unit
mA
µA
V
V
µA
µA
V
V
Reset asserted
—
0.7 x V
DD
–0.3
V
IN
= V
DD
= 3.6 V
V
IN
= 0 V, V
DD
= 3.6 V
I
OUT
= 500 µA
I
OUT
= –500 µA
–10
–10
0.8 x V
DD
—
Notes:
1.
For input pins 315/434, AFC, BT[1:0], and DEV[1:0].
2.
For output pin DOUT.
Table 4. Reset Timing Characteristics
(V
DD
= 3.3 V, T
A
= 25 °C)
Parameter
RST Pulse Width
Symbol
t
SRST
Min
100
Typ
—
Max
—
Unit
µs
t
SRST
RST
70%
30%
Figure 1. Reset Timing
Rev. 0.5
5
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