SMCG5629 thru SMCG5665A, e3
and SMCJ5629 thru SMCJ5665A, e3
TRANSIENT VOLTAGE SUPPRESSORS
SCOTTSDALE DIVISION
DESCRIPTION
These surface mount Transient Voltage Suppressors (TVSs) are used for protecting
sensitive components requiring low clamping voltage levels. They are rated at high
current impulses typically generated by inductive switching transients. They are also
optionally available as RoHS Compliant (annealed matte-Tin finish) with an e3 suffix
added to the part number. Other benefits are achieved with low-profile surface mount
J-bend or Gull-wing terminals for stress-relief and lower weight. Its low-flat profile
provides easier insertion or automatic handling benefits compared to other MELF style
packages. Options for screening to avionics grade with MA prefix or similar to JAN,
JANTX, JANTXV, and JANS by using MQ, MX, MV or MSP respectively for part
number prefixes for screening in accordance with MIL-PRF-19500/500.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
FEATURES
•
•
•
Reliability data per JESD22-A108, JESD22-A104
JESD22-A113-B, JESD22-A101-B, and JESD22-A102
Thermally efficient surface mount with J-bends or Gull
wings termination for stress relief (flat handling surface
and easier placement)
Optional 100% screening for avionics grade available by
adding MA prefix to part number for added 100%
temperature cycle -55°C to +125°C (10X), surge (3X), 24
hours HTRB and post test (V
BR
and I
D
)
Options for screening in accordance with MIL-PRF-
19500/500 for JAN, JANTX, and JANTXV are available
by adding MQ, MX, or MV prefixes respectively to part
numbers. For example, designate a MXSMCJ5629A for
a JANTX screen.
RoHS Compliant devices available by adding “e3” suffix
APPLICATIONS / BENEFITS
•
Working Standoff Voltages: 5.5 volts to 171 volts
•
Metallurgically bonded
•
For high reliability transient voltage suppression in
low profile surface mount locations requiring easy
placement and strain relief
•
Light weight for airborne or satellite applications
•
Superior surge quality to protect from ESD and EFT
transients per IEC61000-4-2 and -4-4
•
Lightning surge protection per IEC61000-4-5 for
Class 1 and 2 with source impedance of 42 Ohms as
well as Class 3 and 4 selectively at lower voltages
(V
WM
) and higher surge current (I
PP
) ratings herein
•
Protects sensitive components such as ICs, CMOS,
Bipolar, BiCMOS, ECL, DTL, T
2
L, etc.
•
•
•
•
•
•
•
•
•
•
•
MAXIMUM RATINGS
Operating temperature: -55°C to +150°C
Storage temperature: -55°C to +150°C
1500 Watts of Peak Pulse Power at 10/1000 µs as shown
in Figure 3 (see Figure 1 for other t
P
values)
Thermal resistance: 20°C/W Junction to Lead
Impulse repetition rate (duty factor): 0.01%
5.0 Watt steady-state maximum power at T
L
=25°C
t
clamping
(0V to V
(BR)
min): 50 picoseconds max (theoretical)
Forward voltage V
F
@ 100 Amps 8.3 ms: 3.5 V max
.
Solder Temperature: 260 °C for 10 s maximum
MICROSEMI
Part Number
Modified
“G”
Bend Lead
SMCG5629
SMCG5629A
SMCG5630
SMCG5630A
SMCG5631
SMCG5631A
SMCG5632
SMCG5632A
SMCG5633
SMCG5633A
SMCG5634
SMCG5634A
MICROSEMI
Part Number
Modified
“J”
Bend Lead
SMCJ5629
SMCJ5629A
SMCJ5630
SMCJ5630A
SMCJ5631
SMCJ5631A
SMCJ5632
SMCJ5632A
SMCJ5633
SMCJ5633A
SMCJ5634
SMCJ5634A
MECHANICAL AND PACKAGING
•
Molded epoxy package meets UL94V-0
•
Terminals: Tin-Lead or RoHS Compliant annealed
matte-Tin plating solderable per MIL-STD-750,
method 2026
•
Body marked with P/N without SMCJ or SMCG letters
(ie. 5629A, 5640, 5655A, 5662, 5665A, etc.)
•
Cathode indicated by band
•
Weight: 0.25 grams (approximate)
•
Tape & Reel packaging per EIA-481
(2500 units/reel)
ELECTRICAL CHARACTERISTICS @ 25
o
C
Breakdown
Voltage*
(V
BR
)
MIN. MAX.
Vdc
Vdc
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.5
9.9
10.5
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
Test
Current
(I
(BR)
)
mAdc
10
10
10
10
10
10
1
1
1
1
1
1
Rated
Standoff
Voltage
(V
WM
)
V
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
Maximum
Standby
Current
(I
D
at V
WM
)
μAdc
1000
1000
500
500
200
200
50
50
10
10
5
5
SMCG/J5629 thru
SMCG/J5665A, e3
Maximum Peak
Reverse Voltage
(V
C
max. at I
PP
)
V
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
Maximum Peak
Pulse Current
(I
PP
)
A
139
143
128
132
120
124
109
112
100
103
93
96
Copyright
©
2007
6-21-2007 REV D
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
SMCG5629 thru SMCG5665A, e3
and SMCJ5629 thru SMCJ5665A, e3
TRANSIENT VOLTAGE SUPPRESSORS
SCOTTSDALE DIVISION
OUTLINE AND CIRCUIT
WWW .
Microsemi
.C
OM
Peak Pulse Power (P
PP
) in KW
Exponential wave-
form (See FIG. 2)
Square-wave pulse
C: Capacitance in pico farads
Measured at
zero voltage
Measured at
Stand-off Voltage
Pulse Time (tp)
FIGURE 1
Non-repetitive peak pulse power rating curve.
Note: Peak power defined as peak voltage times peak current.
BV: Breakdown Voltage in Volts
FIGURE 5
TYPICAL CAPACITANCE vs. BREAKDOWN VOLTAGE
Peak pulse power (P
PP
) or current I
PP
(surge) in percent of 25
o
C rating
Pulse current (IP) in percent of I
PP
Peak Value
I
PP
Pulse time duration (tp) is
defined as that point where
I
P
decays to 50% of I
(surge).
Steady-state power
dissipation (watts)
T
L
– Lead Temperature C
o
FIGURE 4
Steady-state power
derating curve
Time (t) in milliseconds
FIGURE 2
Pulse wave form for exponential surge
o
T
A
Ambient Temperature C
FIGURE 3
Derating curve
PACKAGE DIMENSIONS
SMCG/J5629 thru
SMCG/J5665A, e3
MIN
MAX
MIN
MAX
A
.115
.121
2.92
3.07
DIMENSIONS IN INCHES
B
C
D
E
F
.260
.220
.305
.077
.380
.280
.245
.320
.104
.400
DIMENSIONS IN MILLIMETERS
6.60
5.59
7.75
1.95
9.65
7.11
6.22
8.13
2.65 10.16
K
.025
.040
0.635
1.016
L
.30
.060
0.760
1.520
DO-214AB
Copyright
©
2007
6-21-2007 REV D
DO-215AB
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
