PE43713
Product Specification
UltraCMOS® RF Digital Step Attenuator, 9 kHz–6 GHz
Features
• Flexible attenuation steps of 0.25 dB, 0.5 dB and
1 dB up to 31.75 dB
• Glitch-less attenuation state transitions
• Monotonicity: 0.25 dB up to 4 GHz, 0.5 dB up to
5 GHz and 1 dB up to 6 GHz
• Extended +105 °C operating temperature
• Parallel and Serial programming interfaces with
Serial Addressability
• Packaging—32-lead 5 × 5 mm QFN
Figure 1 •
PE43713 Functional Diagram
Switched Attenuator Array
RF
Input
RF
Output
Applications
• Test and measurement (T&M)
• General purpose RF attenuator
Parallel
Control
×7
Serial In
CLK
Control Logic Interface
LE
(optional)
A0
A1
A2
P/S
V
SS_EXT
Product Description
The PE43713 is a 50Ω, HaRP™ technology-enhanced, 7-bit RF digital step attenuator (DSA) that supports a
broad frequency range from 9 kHz to 6 GHz. It features glitch-less attenuation state transitions, supports 1.8V
control voltage and includes an extended operating temperature range to +105 °C and optional V
SS_EXT
bypass
mode to improve spurious performance, making this device ideal for test and measurement (T&M).
The PE43713 is a pin-compatible upgraded version of the PE43703. An integrated digital control interface
supports both Serial Addressable and Parallel programming of the attenuation, including the capability to
program an initial attenuation state at power-up.
The PE43713 covers a 31.75 dB attenuation range in 0.25 dB, 0.5 dB and 1dB steps. It is capable of maintaining
0.25 dB monotonicity through 4 GHz, 0.50 dB monotonicity through 5 GHz and 1 dB monotonicity through 6
GHz. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports.
The PE43713 is manufactured on Peregrine’s UltraCMOS
®
process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate.
©2017, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification
www.psemi.com
DOC-84877-2 – (1/2018)
PE43713
UltraCMOS® RF Digital Step Attenuator
Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Optional External V
SS
Control
For proper operation, the V
SS_EXT
control pin must be grounded or tied to the V
SS
voltage specified in
Table 2.
When the V
SS_EXT
control pin is grounded, FETs in the switch are biased with an internal negative voltage
generator. For applications that require the lowest possible spur performance, V
SS_EXT
can be applied externally
to bypass the internal negative voltage generator.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in
Table 1
may cause permanent damage. Operation should be
restricted to the limits in
Table 2.
Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in
Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 •
Absolute Maximum Ratings for PE43713
Parameter/Condition
Supply voltage, V
DD
Digital input voltage
RF input power, 50Ω
9 kHz–48 MHz
>48 MHz–6 GHz
Storage temperature range
ESD voltage HBM, all pins
(1)
ESD voltage CDM, all pins
(2)
Notes:
1) Human body model (MIL–STD 883 Method 3015).
2) Charged device model (JEDEC JESD22–C101).
Min
–0.3
–0.3
Max
5.5
3.6
Unit
V
V
Figure 5
+31
–65
+150
3000
1000
dBm
dBm
°C
V
V
Page 2
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DOC-84877-2 – (1/2018)
PE43713
UltraCMOS® RF Digital Step Attenuator
Recommended Operating Conditions
Table 2
lists the recommending operating condition for the PE43713. Devices should not be operated outside
the recommended operating conditions listed below.
Table 2 •
Recommended Operating Condition for PE43713
Parameter
Normal mode, V
SS_EXT
= 0V
(1)
Supply voltage, V
DD
Supply current, I
DD
2.3
150
5.5
200
V
µA
Min
Typ
Max
Unit
Bypass mode, V
SS_EXT
= –3.4V
(2)
Supply voltage, V
DD
(V
DD
≥
3.4V see
Table 3
for full spec compliance)
Supply current, I
DD
Negative supply voltage, V
SS_EXT
Negative supply current, I
SS
–3.6
–40
–16
2.7
3.4
50
5.5
80
–2.4
V
µA
V
µA
Normal or bypass mode
Digital input high
Digital input low
Digital input current
RF input power, CW
(3)
9 kHz–48 MHz
>48 MHz–6 GHz
RF input power, pulsed
(4)
9 kHz–48 MHz
>48 MHz–6 GHz
Operating temperature range
Notes:
1) Normal mode: connect V
SS_EXT
(pin 20) to GND (V
SS_EXT
= 0V) to enable internal negative voltage generator.
2) Bypass mode: use V
SS_EXT
(pin 20) to bypass and disable internal negative voltage generator.
3) 100% duty cycle, all bands, 50Ω.
4) Pulsed, 5% duty cycle of 4620 µs period, 50Ω.
1.17
–0.3
3.6
0.6
17.5
V
V
µA
Figure 5
+23
dBm
dBm
Figure 5
+28
–40
+25
+105
dBm
dBm
°C
DOC-84877-2 – (1/2018)
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Page 3
PE43713
UltraCMOS® RF Digital Step Attenuator
Electrical Specifications
Table 3
provides the PE43713 key electrical specifications at 25 °C, RF1 = RF
IN
, RF2 = RF
OUT
(Z
S
= Z
L
= 50Ω),
unless otherwise specified. Normal mode
(1)
is at V
DD
= 3.3V and V
SS_EXT
= 0V. Bypass mode
(2)
is at V
DD
= 3.4V
and V
SS_EXT
= –3.4V.
Table 3 •
PE43713 Electrical Specifications
Parameter
Operating frequency
0.25 dB step
0.5 dB step
1 dB step
9 kHz–1.0 GHz
1.0–2.2 GHz
2.2–4.0 GHz
4.0–6.0 GHz
Condition
Frequency
Min
9 kHz
Typ
Max
6 GHz
Unit
As
shown
dB
dB
dB
Attenuation range
0–31.75
0–31.50
0–31.00
1.3
1.6
1.95
2.45
1.5
1.85
2.4
2.8
Insertion loss
dB
dB
dB
dB
0.25 dB step
0–8 dB
8.25–31.75 dB
0–31.75 dB
0–31.75 dB
Attenuation error
9 kHz–2.2 GHz
9 kHz–2.2 GHz
>2.2–3.0 GHz
>3.0–4.0 GHz
±(0.20 + 1.5% of
attenuation setting)
±(0.20 + 2.0% of
attenuation setting)
±(0.15 + 3.0% of
attenuation setting)
±(0.25 + 3.5% of
attenuation setting)
dB
dB
dB
dB
0.5 dB step
0–8 dB
8.5–31.5 dB
0–31.5 dB
0–31.5 dB
9 kHz–2.2 GHz
9 kHz–2.2 GHz
>2.2–3.0 GHz
>3.0–5.0 GHz
±(0.20 + 1.5% of
attenuation setting)
±(0.20 + 2.0% of
attenuation setting)
±(0.15 + 3.0% of
attenuation setting)
±(0.25 + 5.0% of
attenuation setting)
dB
dB
dB
dB
Page 4
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DOC-84877-2 – (1/2018)
PE43713
UltraCMOS® RF Digital Step Attenuator
Table 3 •
PE43713 Electrical Specifications (Cont.)
Parameter
1 dB step
0–8 dB
9–31 dB
Attenuation error
0–31 dB
0–31 dB
0–31 dB
Input port
Return loss
Output port
Relative phase
Input 0.1dB compression
point
(3)
Input IP3
RF T
rise
/T
fall
Settling time
Switching time
Attenuation transient
(envelope)
Notes:
1) Normal mode: connect V
SS_EXT
(pin 20) to GND (V
SS_EXT
= 0V) to enable internal negative voltage generator.
2) Bypass mode: use V
SS_EXT
(pin 20) to bypass and disable internal negative voltage generator.
3) The input 0.1 dB compression point is a linearity figure of merit. Refer to Table 2 for the operating RF input power (50Ω).
Condition
Frequency
Min
Typ
Max
Unit
9 kHz–2.2 GHz
9 kHz–2.2 GHz
>2.2–3.0 GHz
>3.0–5.0 GHz
>5.0–6.0 GHz
9 kHz–6 GHz
9 kHz–4 GHz
4–6 GHz
9 kHz–4 GHz
4–6 GHz
48 MHz–6 GHz
18
13
15
27
42
31
57
56
200
1.6
275
2 GHz
0.3
±(0.20 + 1.5% of
attenuation setting)
±(0.20 + 2.0% of
attenuation setting)
±(0.15 + 3.0% of
attenuation setting)
±(0.25 + 5.0% of
attenuation setting)
±(0.25 + 5.0% of
attenuation setting)
dB
dB
dB
dB
dB
dB
dB
dB
deg
deg
dBm
dBm
dBm
ns
µs
ns
dB
All states
Two tones at +18 dBm, 20 MHz
spacing
10%/90% RF
RF settled to within 0.05 dB of final
value
50% CTRL to 90% or 10% RF
4 GHz
6 GHz
DOC-84877-2 – (1/2018)
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Page 5
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