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MJD112 NPN Silicon Darlington Transistor
November 2006
MJD112
NPN Silicon Darlington Transistor
Features
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
Equivalent Circuit
C
tm
B
1
D-PAK
2.Collector
3.Emitter
R1
R2
E
1.Base
R1
≅
10kΩ
R2
≅
0.6kΩ
Absolute Maximum Ratings*
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
T
a
= 25°C unless otherwise noted
Parameter
Value
100
100
5
2
4
50
20
1.75
150
- 65 ~ 150
Units
V
V
V
A
A
mA
W
W
°C
°C
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
T
a
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
I
CEO
I
CBO
I
EBO
h
FE
Parameter
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
Test Condition
I
C
= 30mA, I
B
= 0
V
CE
= 50V, I
B
= 0
V
CB
= 100V, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 2A
V
CE
= 3V, I
C
= 4A
I
C
= 2A, I
B
= 8mA
I
C
= 4A, I
B
= 40mA
I
C
= 4A, I
B
= 40mA
V
CE
= 3A, I
C
= 2A
V
CE
= 10V, I
C
= 0.75A
V
CB
= 10V, I
E
= 0
f = 0.1MHz
Min.
100
Max.
20
20
2
Units
V
µA
µA
mA
500
1000
200
12K
2
3
4
2.8
V
V
V
V
MHz
100
pF
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
25
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
MJD112 Rev. B
MJD112 NPN Silicon Darlington Transistor
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10000
10
V
CE
= 3V
I
C
= 250 I
B
h
FE
, DC CURRENT GAIN
V
BE
(sat)
1
1000
V
CE
(sat)
100
0.1
10
0.01
0.1
1
10
0.01
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
V
CC
=30V
I
C
=250I
B
C
ob
[pF], CAPACITANCE
100
t
R
,t
D
(
µ
s), TURN ON TIME
1
10
t
R
t
D
1
0.1
1
10
100
0.1
0.01
0.1
1
10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
10
10
I
C
[A], COLLECTOR CURRENT
V
CC
=30V
I
C
=250I
B
10
s
0
µ
t
STG
,t
F
[
µ
S], TURN OFF TIME
t
STG
1
DC
1
5m ms
s
1
t
F
0.1
0.1
0.01
0.01
0.1
1
10
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
2
MJD112 Rev. B
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