BFU690F
NPN wideband silicon RF transistor
Rev. 2 — 14 March 2014
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
1.2 Features and benefits
Low noise high linearity microwave transistor
High output third-order intercept point 34 dBm at 1.8 GHz
40 GHz f
T
silicon technology
1.3 Applications
Ka band oscillators DRO’s
C-band high output buffer amplifier
ZigBee
LTE, cellular, UMTS
1.4 Quick reference data
Table 1.
V
CBO
V
CEO
V
EBO
I
C
P
tot
h
FE
C
CBS
f
T
G
p(max)
NF
P
L(1dB)
Quick reference data
Conditions
open emitter
open base
open collector
T
sp
85
C
I
C
= 20 mA; V
CE
= 2 V; T
j
= 25
C
V
CB
= 2 V; f = 1 MHz
I
C
= 60 mA; V
CE
= 1 V; f = 2 GHz;
T
amb
= 25
C
I
C
= 60 mA; V
CE
= 1 V; f = 1.8 GHz;
T
amb
= 25
C
I
C
= 15 mA; V
CE
= 2 V; f = 1.8 GHz;
S
=
opt
[2]
[1]
Symbol Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
collector-base capacitance
transition frequency
maximum power gain
noise figure
Min Typ Max Unit
-
-
-
-
-
90
-
-
-
-
-
-
-
-
70
-
16
5.5
2.5
V
V
V
100 mA
490 mW
fF
GHz
dB
dB
dBm
135 180
404 -
18
-
20.5 -
0.65 -
22
-
output power at 1 dB gain compression I
C
= 70 mA; V
CE
= 4 V; Z
S
= Z
L
= 50
;
f = 1.8 GHz; T
amb
= 25
C
[1]
[2]
T
sp
is the temperature at the solder point of the emitter lead.
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline
Graphic symbol
3. Ordering information
Table 3.
Ordering information
Package
Name
BFU690F
-
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
Type number
4. Marking
Table 4.
BFU690F
Marking
Marking
D4*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
open base
open collector
T
sp
85
C
[1]
Min
-
-
-
-
-
65
-
Max
16
5.5
2.5
100
490
+150
150
Unit
V
V
V
mA
mW
C
C
T
sp
is the temperature at the solder point of the emitter lead.
BFU690F
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 14 March 2014
2 of 12
NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
[1]
Typ
132
Unit
K/W
Determined by simulation.
Fig 1.
Power derating curve
BFU690F
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 14 March 2014
3 of 12
NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C unless otherwise specified
Symbol
Parameter
Conditions
I
C
= 2.5
A;
I
E
= 0 mA
I
C
= 1 mA; I
B
= 0 mA
I
E
= 0 mA; V
CB
= 8 V
I
C
= 20 mA; V
CE
= 2 V
V
CB
= 2 V; f = 1 MHz
V
EB
= 0.5 V; f = 1 MHz
V
CB
= 2 V; f = 1 MHz
I
C
= 60 mA; V
CE
= 1 V; f = 2 GHz;
T
amb
= 25
C
I
C
= 60 mA; V
CE
= 1 V; T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
s
21
2
insertion power gain
I
C
= 60 mA; V
CE
= 1 V; T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
NF
noise figure
I
C
= 15 mA; V
CE
= 2 V;
S
=
opt
;
T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
G
ass
associated gain
I
C
= 15 mA; V
CE
= 2 V;
S
=
opt
;
T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
P
L(1dB)
output power at 1 dB gain compression
I
C
= 70 mA; V
CE
= 4 V; Z
S
= Z
L
= 50
;
T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
IP3
third-order intercept point
I
C
= 70 mA; V
CE
= 4 V; Z
S
= Z
L
= 50
;
T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
[1]
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= MSG.
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Min Typ
16
5.5
-
-
90
-
-
-
-
[1]
Max Unit
-
-
100
100
180
-
-
-
-
fF
fF
fF
GHz
V
V
mA
nA
V
(BR)CBO
collector-base breakdown voltage
V
(BR)CEO
collector-emitter breakdown voltage
I
C
I
CBO
h
FE
C
CES
C
EBS
C
CBS
f
T
G
p(max)
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
maximum power gain
-
-
70
-
135
527
1699
404
18
-
-
-
-
-
-
22
20.5
17
15
13.5
11
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
-
-
-
0.60
0.65
0.70
-
-
-
dB
dB
dB
-
-
-
18.5
17.5
15.5
-
-
-
dB
dB
dB
-
-
-
22
22
20
-
-
-
dBm
dBm
dBm
-
-
-
34
34
33
-
-
-
dBm
dBm
dBm
BFU690F
Product data sheet
Rev. 2 — 14 March 2014
4 of 12
NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
80
I
C
(mA)
60
001aam833
(1)
(2)
(3)
(4)
(5)
(6)
200
h
FE
150
001aam834
40
(7)
(8)
(9)
100
20
(10)
50
0
0
1
2
3
4
V
CE
(V)
5
0
0
20
40
60
80
100
I
C
(mA)
T
amb
= 25
C.
(1) I
B
= 550
A
(2) I
B
= 500
A
(3) I
B
= 450
A
(4) I
B
= 400
A
(5) I
B
= 350
A
(6) I
B
= 300
A
(7) I
B
= 250
A
(8) I
B
= 200
A
(9) I
B
= 150
A
(10) I
B
= 100
A
V
CE
= 2 V; T
amb
= 25
C.
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
Fig 3.
DC current gain as a function of collector
current; typical values
BFU690F
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 2 — 14 March 2014
5 of 12
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