PESD6V5C1USF
17 December 2017
Ultra low capacitance unidirectional ESD protection diode
Product data sheet
1. General description
Ultra low capacitance unirectional ElectroStatic Discharge (ESD) protection diode, part of
the TrEOS Protection family. This device is housed in a DSN0603-2 (SOD962) leadless ultra
small Surface-Mounted Device (SMD) package. The TrEOS Protection family is optimized
for safeguarding very sensitive high-speed interfaces against ESD pulses with a high level of
robustness.
2. Features and benefits
•
•
•
•
Unidirectional ESD protection of one line
Extremely low diode capacitance C
d
= 0.45 pF
ESD protection up to ±20 kV according to IEC 61000-4-2
Ultra small SMD package
3. Applications
ESD and surge protection for:
•
•
•
ultra high speed datalines
very sensitive interfaces lines
generic interface lines
in portable electronics, communication, consumer and computing devices.
4. Quick reference data
Table 1. Quick reference data
Symbol
C
d
V
RWM
Parameter
diode capacitance
reverse standoff
voltage
Conditions
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
T
amb
= 25 °C
Min
-
-
Typ
0.45
-
Max
0.5
6.5
Unit
pF
V
Nexperia
PESD6V5C1USF
Ultra low capacitance unidirectional ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin
1
2
Symbol Description
K
A
cathode[1]
anode
1
2
sym035
Simplified outline
Graphic symbol
1
2
Transparent
top view
DSN0603-2 (SOD962-2)
[1]
The marking bar indicates the cathode.
6. Ordering information
Table 3. Ordering information
Type number
PESD6V5C1USF
Package
Name
DSN0603-2
Description
silicon, leadless ultra small package; 2 terminals; 0.4 mm pitch;
0.6 mm x 0.3 mm x 0.3 mm body
Version
SOD962-2
7. Marking
Table 4. Marking codes
Type number
PESD6V5C1USF
Marking code
R
PESD6V5C1USF
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
17 December 2017
2 / 12
Nexperia
PESD6V5C1USF
Ultra low capacitance unidirectional ESD protection diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
PPM
T
j
T
amb
T
stg
V
ESD
Parameter
rated peak pulse current
junction temperature
ambient temperature
storage temperature
electrostatic discharge
voltage
IEC 61000-4-2 (contact discharge)
IEC 61000-4-2 (air discharge)
[1]
[1]
Conditions
t
p
= 8/20 μs
[1]
Min
-
-
-40
-65
-
-
Max
9
150
125
150
20
20
Unit
A
°C
°C
°C
kV
kV
ESD maximum ratings
[1]
Device stressed with ten non-repetitive ESD pulses.
120
I
PP
(%)
80
100 % I
PP
; 8 µs
001aaa630
001aaa631
I
PP
100 %
90 %
e
-t
50 % I
PP
; 20 µs
40
10 %
0
0
10
20
30
40
t (µs)
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
Fig. 1.
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD6V5C1USF
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
17 December 2017
3 / 12
Nexperia
PESD6V5C1USF
Ultra low capacitance unidirectional ESD protection diode
9. Characteristics
Table 6. Characteristics
Symbol
V
RWM
V
BR
I
RM
C
d
V
CL
Parameter
reverse standoff
voltage
breakdown voltage
reverse leakage
current
diode capacitance
clamping voltage
Conditions
T
amb
= 25 °C
I
R
= 1 mA; T
amb
= 25 °C
V
RWM
= 6.5 V; T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
I
PPM
= 9 A; t
p
= 8/20 µs; T
amb
= 25 °C
I
PP
= 8 A; t
p
= TLP; T
amb
= 25 °C
I
PP
= 16 A; t
p
= TLP; T
amb
= 25 °C
R
dyn
[1]
[2]
Min
-
7
-
-
[1]
[2]
[2]
[2]
-
-
-
-
Typ
-
8
1
0.45
-
2.2
3
0.1
Max
6.5
11
50
0.5
3
-
-
-
Unit
V
V
nA
pF
V
V
V
Ω
dynamic resistance
I
R
= 10 A; T
amb
= 25 °C
According to IEC 61000-4-5 and IEC 61643-321.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse; ANSI / ESD STM5.5.1-2008.
I
0.5
C
d
(pF)
0.4
aaa-027271
0.3
- V
CL
- V
BR
- V
RWM
- I
RM
- I
R
-
P-N
+
V
0.2
0.1
0
- I
PP
006aaa407
0
1
2
3
4
5
6
V
R
(V)
7
f = 1 MHz; T
amb
= 25 °C
Fig. 4.
Diode capacitance as a function of reverse
voltage; typical values
Fig. 3.
V-I characteristics for unidirectional ESD
protection diode
PESD6V5C1USF
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
17 December 2017
4 / 12
Nexperia
PESD6V5C1USF
Ultra low capacitance unidirectional ESD protection diode
0.5
C
d
(pF)
0.4
aaa-017823
5
S
21
(dB)
0
aaa-017824
0.3
-5
0.2
-10
0.1
-15
0.0
0
2
4
6
f (GHz)
8
-20
10
-3
10
-2
10
-1
1
10
10
2
f (GHz)
Fig. 5.
30
25
Diode capacitance as a function of frequency;
typical values
aaa-027610
Fig. 6.
0
-5
Insertion loss; typical values
aaa-027611
I
PP
(A)
I
PP
(A)
20
15
10
5
0
-10
-15
-20
-25
-30
-30
0
5
10
15
20
25
30
V
CL
(V)
-25
-20
-15
-10
-5
0
V
CL
(V)
t
p
= 100 ns; Transmission Line Pulse (TLP)
Fig. 7.
Dynamic resistance with positive clamping
voltage
Fig. 8.
t
p
= 100 ns; Transmission Line Pulse (TLP)
Dynamic resistance with negative clamping
voltage
PESD6V5C1USF
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
17 December 2017
5 / 12
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