SK12B - SK115B
Taiwan Semiconductor
1A, 20V - 150V Surface Mount Schottky Barrier Rectifier
FEATURES
Low power loss, high efficiency
Ideal for automated placement
Guard ring for over-voltage protection
High surge current capability
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
●
●
●
●
●
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
Package
Configuration
VALUE
1
20 - 150
30
Single Die
UNIT
A
V
A
DO-214AA (SMB)
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
●
●
●
●
●
●
●
●
●
Case: DO-214AA (SMB)
Molding compound meets UL 94V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
Part no. with suffix “H” means AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.093 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave superimposed
on rated load per diode
Critical rate of rise of off-state voltage
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
dV/dt
T
J
T
STG
- 55 to +125
SYMBOL
SK
12B
SK
12B
20
14
20
SK
13B
SK
13B
30
21
30
SK
14B
SK
14B
40
28
40
SK
15B
SK
15B
50
35
50
1
30
10000
- 55 to +150
- 55 to +150
SK
16B
SK
16B
60
42
60
SK
19B
SK
19B
90
63
90
SK
SK
UNIT
110B 115B
SK
SK
110B 115B
100
150
V
70
105
V
100
150
V
A
A
V/μs
°C
°C
1
Version:K1701
SK12B - SK115B
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
SYMBOL
R
ӨJL
LIMIT
25
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
SK12B
SK13B
SK14B
Forward voltage per diode
(1)
CONDITIONS
SYMBOL
TYP
-
MAX
0.50
UNIT
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
SK15B
SK16B
SK19B
SK110B
SK115B
SK12B
SK13B
SK14B
SK15B
SK16B
SK19B
SK110B
SK115B
SK12B
SK13B
SK14B
SK15B
SK16B
SK19B
SK110B
SK115B
SK12B
SK13B
SK14B
SK15B
SK16B
SK19B
SK110B
SK115B
I
F
= 1A,T
J
= 25°C
V
F
-
-
-
0.75
0.85
0.95
-
T
J
= 25°C
I
R
-
0.5
Reverse current @ rated V
R
per
diode
(2)
0.1
-
10
Reverse current @ rated V
R
per
diode
(2)
T
J
= 100°C
I
R
-
5
-
-
-
-
Reverse current @ rated V
R
per
diode
(2)
T
J
= 125°C
I
R
-
-
-
2
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:K1701
SK12B - SK115B
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
1.5
AVERAGE FORWARD CURRENT (A)
1000
Fig2. Typical Junction Capacitance
CAPACITANCE (pF)
1
SK15B-SK115B
100
0.5
SK12B-SK14B
RESISTIVE OR
INDUCTIVE LOAD
f=1.0MHz
Vsig=50mVp-p
10
0
30
60
90
LEAD TEMPERATURE
120
(
°
C)
150
0.1
1
10
100
REVERSE VOLTAGE (V)
Fig3. Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (mA)
100
INSTANTANEOUS FORWARD CURRENT (A)
SK12B-SK14B
SK15B-SK16B
SK110B-SK115B
10
10
Fig4. Typical Forward Characteristics
10
T
J
=125
o
C
1
UF1DLW
T
J
=125°C
1
1
0.1
T
J
=75
o
C
0.01
PULSE WIDTH=300μs
1% DUTY CYCLE
Pulse width
SK12B-SK14B
SK15B-SK16B
0.7
0.8
0.9
1
1.1
SK110B-SK115B
1
1.2
1.4
1.6
0.01
T
J
=25
o
C
0.001
0.3
0.1
0
0.2
0.4
0.6
0.8
0.4
0.5
0.6
1.2
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:K1701
(A)
0.1
T
J
=25°C
SK12B - SK115B
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig5. Maximum Non-repetitive Forward Surge Current
TRANSIENT THERMAL IMPEDANCE (°C/W)
PEAK FORWARD SURGE CURRENT(A)
50
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
Fig6. Typical Transient Thermal Characteristics
100
8.3ms Single Half Sine-
Wave
10
1
0.1
0.01
0.1
1
10
100
T-PULSE DURATION (sec)
5
Version:K1701
嵌入式系统
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