Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
PEMB3; PUMB3
PNP/PNP resistor-equipped
transistors; R1 = 4.7 kΩ, R2 = open
Product data sheet
Supersedes data of 2001 Sep 19
2003 Oct 15
NXP Semiconductors
Product data sheet
PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
FEATURES
•
Built-in bias resistors
•
Simplified circuit design
•
Reduction of component count
•
Reduced pick and place costs.
APPLICATIONS
•
Low current peripheral drivers
•
Replacement of general purpose transistors in digital
applications
•
Control of IC inputs.
DESCRIPTION
PNP/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS
PEMB3
PUMB3
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
SOT666
SOT363
EIAJ
−
SC-88
Z3
B5*
(1)
MARKING CODE
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
O
TR1
TR2
R1
R2
PEMB3; PUMB3
PARAMETER
collector-emitter
voltage
output current (DC)
PNP
PNP
bias resistor
bias resistor
TYP.
−
−
−
−
4.7
open
MAX.
−50
−100
−
−
−
−
UNIT
V
mA
−
−
kΩ
−
NPN/PNP
COMPLEMENT
PEMD6
PUMD6
NPN/NPN
COMPLEMENT
PEMH7
PUMH7
PINNING
TYPE NUMBER
PEMB3
PUMB3
handbook, halfpage
6
SIMPLIFIED OUTLINE AND SYMBOL
PIN
5
4
6
5
4
DESCRIPTION
emitter TR1
base TR1
collector TR2
emitter TR2
base TR2
collector TR1
1
2
3
R1
TR1
R1
TR2
4
5
6
1
Top view
2
3
MAM452
1
2
3
2003 Oct 15
2
NXP Semiconductors
Product data sheet
PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
PEMB3
PUMB3
−
−
DESCRIPTION
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
PEMB3; PUMB3
VERSION
SOT666
SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per transistor
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
T
amb
≤
25
°C
note 1
notes 1 and 2
−
−
300
300
mW
mW
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
note 1
notes 1 and 2
−
−
−65
−
−65
200
200
+150
150
+150
mW
mW
°C
°C
°C
open emitter
open base
open collector
−
−
−
−
−
−50
−50
−5
−100
−100
V
V
V
mA
mA
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2003 Oct 15
3
NXP Semiconductors
Product data sheet
PNP/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
THERMAL CHARACTERISTICS
SYMBOL
Per transistor
R
th j-a
thermal resistance from junction to ambient
SOT363
SOT666
Per device
R
th j-a
thermal resistance from junction to ambient
SOT363
SOT666
Notes
T
amb
≤
25
°C
note 1
note 1
T
amb
≤
25
°C
note 1
notes 1 and 2
PARAMETER
CONDITIONS
PEMB3; PUMB3
VALUE
UNIT
625
625
K/W
K/W
416
416
K/W
K/W
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1
C
c
PARAMETER
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
saturation voltage
input resistor
collector capacitance
I
E
= i
e
= 0; V
CB
=
−10
V;
f = 1 MHz
CONDITIONS
V
CB
=
−50
V; I
E
= 0
V
CE
=
−30
V; I
B
= 0
V
CE
=
−30
V; I
B
= 0; T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0
V
CE
=
−5
V; I
C
=
−1
mA
I
C
=
−5
mA; I
B
=
−0.25
mA
MIN.
−
−
−
−
200
−
3.3
−
TYP.
−
−
−
−
−
−
4.7
−
MAX.
−100
−1
−50
−100
−
−100
6.1
3
mV
kΩ
pF
UNIT
nA
μA
μA
nA
2003 Oct 15
4
单片机
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