VS-MBRB3030CTL-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
Base
common
cathode
2
FEATURES
• 150 °C T
J
operation
• Center tap configuration
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
2
1
3
D
2
PAK (TO-263AB)
1
Anode
1
2
Common
cathode
3
Anode
2
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
E
AS
Package
Circuit configuration
2 x 15 A
30 V
0.34 V
183 mA at 125 °C
150 °C
13 mJ
D
2
PAK (TO-263AB)
Common cathode
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
15 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
30
30
1100
0.34
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRB3030CTL-M3
30
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
per device
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 3 A, L = 2.9 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
50 % duty cycle at T
C
= 121 °C rectangular waveform
30
A
1100
360
13
3
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
15
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
Revision: 09-Jan-18
Document Number: 96395
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB3030CTL-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
15 A
Maximum forward voltage drop per leg
See fig. 1
V
FM (1)
30 A
15 A
30 A
Maximum reverse leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.47
0.55
0.34
0.45
2
183
0.22
6.76
2840
8.0
10 000
mA
V
m
pF
nH
V/μs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style D
2
PAK (TO-263AB)
per leg
per package
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 55 to 150
2.0
1.0
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
MBRB3030CTL
Revision: 09-Jan-18
Document Number: 96395
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB3030CTL-M3
www.vishay.com
Vishay Semiconductors
1000
1000
I
R
- Reverse Current (mA)
T
J
= 150 °C
100
I
F
- Instantaneous
Forward Current (A)
100
T
J
= 125 °C
10
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.1
T
J
= 25 °C
1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
5
10
15
20
25
30
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
10 000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.Reverse Voltage
(Per Leg)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
100
0
5
10
15
20
25
30
35
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
t
1
0.1
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 09-Jan-18
Document Number: 96395
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB3030CTL-M3
www.vishay.com
150
Vishay Semiconductors
16
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Allowable Case Temperature (°C)
140
Average Power Loss (W)
DC
130
12
8
RMS limit
120
Square wave (D = 0.50)
80 % Rated V
R
applied
4
DC
110
See note (1)
100
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 10 V
Revision: 09-Jan-18
Document Number: 96395
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB3030CTL-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS- MBR
1
1
2
3
4
5
6
7
8
-
-
-
B
3
30
4
30
5
CT
6
L
7
L
8
-M3
9
2
Vishay Semiconductors product
Schottky MBR series
B = D
2
PAK
Current rating (30 = 30 A)
Voltage rating (30 = 30 V)
CT = center tap (dual)
L = low V
F
None = tube
L = tape and reel (left oriented - for D
2
PAK only)
R = tape and reel (right oriented - for D
2
PAK only)
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
-
-
-
-
-
9
-
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-MBRB3030CTL-M3
VS-MBRB3030CTLR-M3
VS-MBRB3030CTLL-M3
QUANTITY PER T/R
50
800
800
MINIMUM ORDER QUANTITY
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tube
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?96164
www.vishay.com/doc?95444
www.vishay.com/doc?96424
Revision: 09-Jan-18
Document Number: 96395
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
