RSS095N05
Transistor
4V Drive Nch MOS FET
RSS095N05
Structure
Silicon N-channel
MOS FET
External dimensions
(Unit : mm)
SOP8
5.0
0.4
(8)
(5)
1.75
Features
1) Built-in G-S Protection Diode.
2) Small Surface Mount Package (SOP8).
1pin mark
(1)
(4)
3.9
6.0
1.27
0.2
Applications
Power switching , DC / DC converter , Inverter
Each lead has same dimensions
Packaging dimensions
Package
Code
Basic ordering unit(pieces)
Taping
TB
2500
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
Limits
V
DSS
45
V
GSS
20
I
D
±9.5
I
DP *1
±38
I
S
1.6
I
SP
38
*1
P
D
2
*2
T
ch
150
T
stg
-55 to +150
Unit
V
V
A
A
A
A
W
o
Equivalent circuit
(8) (7) (6) (5)
(8)
(7)
(6)
(5)
∗
2
∗
1
(2)
(3)
(4)
(1) (2) (3) (4)
0.4Min.
Total power dissipation
Chanel temperature
Range of Storage temperature
*1 PW≤10µ½、Duty cycle≤1%
*2 Mounted on a ceramic board
(1)
C
o
C
∗1
ESD Protection Diode.
∗2
Body
Diode.
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Source
Source
Source
Gate
Drain
Drain
Drain
Drain
∗
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
Thermal resistance
Parameter
Chanel to ambient
* Mounted on a ceramic board
Symbol
R
th(ch-a)
*
Limits
62.5
Unit
o
C/W
1/4
RSS095N05
Transistor
Electrical characteristic curves
10
V
DS
=10V
pulsed
Ta=125 C
75
o
C
25
o
C
-25
o
C
o
1000
V
GS
=10V
pulsed
Ta=125
o
C
75
o
C
25
o
C
-25
o
C
1000
V
GS
=4.5V
pulsed
Ta=125
o
C
75
o
C
25
o
C
-25
o
C
Static Drain-Source On-State
Resistance R
DS
(on) [mΩ]
Static Drain-Source On-State
Resistance R
DS
(on) [m
Ω
]
Drain Currnt : I
D
[A]
1
100
100
0.1
10
10
0.01
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
0.01
1
0.1
1
10
0.01
0.1
1
10
Gate-Source Voltage : V
GS
[V]
Drain Current : I
D
[A]
Drain Current : I
D
[A]
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (1)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (2)
1000
V
GS
=4V
pulsed
Ta=125
o
C
75
o
C
25
o
C
-25
o
C
100
90
Static Drain-Source On-State
Resistance R
DS
(on) [mΩ]
Ta=25
o
C
pulsed
10
V
GS
=0V
pulsed
Ta=125
o
C
Source Current : Is [A]
Static Drain-Source On-State
Resistance R
DS
(on) [mΩ]
80
70
60
50
40
30
20
10
I
D
=5.0A
I
D
=9.5A
100
1
75
o
C
25
o
C
-25
o
C
10
0.1
1
0.01
0
0.1
1
10
0
3
6
9
12
15
0.01
0.0
0.3
0.6
0.9
1.2
Drain Current : I
D
[A]
Gate-Source Voltage : V
GS
[V]
Source-Drain Voltage : V
SD
[V]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (3)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10000
Fig.6 Source-Current vs.
Source-Drain Voltage
10000
Ciss
Capacitance : C [pF]
1000
Switching Time : t [ns]
k
tf
1000
Coss
R
G
=10Ω
Pulsed
Gate-Source Voltage : V
GS
[V]
Ta=25
o
C
V
DD
=25V
V
GS
=10V
10
9
8
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
Ta=25
o
C
V
DD
=25V
I
D
=9.5A
R
G
=10Ω
Pulsed
100
td(off)
td(on)
100
Ta=25
o
C
f=1MHz
V
GS
=0V
Crss
10
tr
10
0.1
1
10
100
Drain-Source Voltage : V
DS
[V]
1
0.01
0.1
1
10
Drain Current : I
D
[A]
Total Gate Charge : Qg [nC]
Fig.7 Typical capacitance vs.
Source-Drain Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
3/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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