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NDS8425
January 2001
NDS8425
Single N-Channel, 2.5V Specified PowerTrench
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint package.
Features
•
7.4 A, 20 V.
R
DS(ON)
= 0.022
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 0.028
Ω
@ V
GS
= 2.7 V
•
•
•
Fast switching speed
Low gate charge (11nC typical)
High performance trench technology for extremely low
R
DS(ON)
High power and current handling capability in a widely
used surface mount package
Applications
•
•
DC/DC converter
Load switch
•
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
20
±8
(Note 1a)
Units
V
V
A
W
±7.4
±20
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
NDS8425
Device
NDS8425
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2001
Fairchild Semiconductor International
NDS8425 Rev D (W)
NDS8425
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 250µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 0 V
V
DS
= 16 V,
V
DS
= 16 V,V
GS
= 0 V, T
J
=55°C
V
GS
= 8 V,
V
DS
= 0 V
V
GS
= –8 V
V
DS
= 0 V
Min
20
Typ
Max Units
V
Off Characteristics
14
1
10
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
GS
= 4.5 V,
I
D
= 7.4 A
V
GS
= 4.5 V, I
D
= 7.4 A, T
J
=125°C
V
GS
=2.7 V, I
D
=7.2A
V
GS
= 4.5 V,
V
DS
= 5 V,
V
DS
= 5 V
I
D
= 7.4 A
0.4
0.89
-3
15
21
19
1.5
V
mV/°C
22
31
28
mΩ
I
D(on)
g
FS
20
31
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
1098
240
115
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DS
= 15 V,
V
GS
= 4.5 V,
I
D
= 1 A,
R
GEN
= 6
Ω
9
13
26
11
18
24
42
20
18
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V,
V
GS
= 4.5 V
I
D
= 7.4 A,
11
2.5
3.1
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 1.9 A
(Note 2)
1.9
0.72
1.3
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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