TSM10N80
Taiwan Semiconductor
N-Channel Power MOSFET
800V, 9.5A, 1.05Ω
FEATURES
●
●
●
●
●
Low R
DS(ON)
1.05Ω (Max.)
Low gate charge typical @ 53nC (Typ.)
Improve dV/dt capability
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEE 2002/96/EC
●
Halogen-free according to IEC 61249-2-21
definition
KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
R
DS(on)
(max)
Q
g
VALUE
800
1.05
53
UNIT
V
Ω
nC
APPLICATION
●
Power Supply
●
Lighting
TO-220
ITO-220
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
(Note 2)
Total Power Dissipation @ T
C
= 25°C
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Operating Junction and Storage Temperature Range
T
C
= 25°C
T
C
= 100°C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
DTOT
E
AS
I
AS
T
J
, T
STG
290
267
10
- 55 to +150
TO-220 ITO-220
800
±30
9.5
5.7
38
48
UNIT
V
V
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJC
R
ӨJA
TO-220 ITO-220
0.43
62.5
2.6
UNIT
°C/W
°C/W
Notes:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air.
Document Number: DS_P0000022
1
Version: D15
TSM10N80
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Static
(Note 3)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
(Note 4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(Note 5)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
(Note 3)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.
2.
3.
4.
5.
6.
Current limited by package.
Pulse width limited by the maximum junction temperature.
L = 5mH, I
AS
= 10A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25
o
C
100% Eas Test Condition: L = 5mH, I
AS
= 5A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
Pulse test: PW
≤
300µs, duty cycle
≤
2%.
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature.
CONDITIONS
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±30, V
DS
= 0V
V
DS
= 800V, V
GS
= 0V
V
GS
= 10V, I
D
= 4.75A
V
DS
= 30V, I
D
= 4.75A
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(on)
g
fs
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
MIN
800
2.0
--
--
--
--
--
--
--
--
--
TYP
--
--
--
--
0.9
6.3
53
10
23
2336
214
29
MAX
--
4.0
±100
10
1.05
--
--
--
--
--
--
UNIT
V
V
nA
µA
Ω
S
V
DS
= 640V, I
D
=9.5A,
V
GS
= 10V
nC
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
pF
--
--
--
--
--
--
--
63
62
256
72
--
450
5.3
--
--
--
--
1.5
--
--
V
ns
µC
ns
V
DS
= 400V, V
GS
= 10V
R
G
= 25Ω, I
D
= 9.5A
t
r
t
d(off)
t
f
I
S
= 9.5A, V
GS
= 0V
I
S
= 9.5A, V
GS
= 0V
dI
F
/dt = 100A/μs
V
SD
t
rr
Q
rr
Document Number: DS_P0000022
2
Version: D15
TSM10N80
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSM10N80CZ C0G
TSM10N80CI C0G
PACKAGE
TO-220
ITO-220
PACKING
50pcs / Tube
50pcs / Tube
Document Number: DS_P0000022
3
Version: D15
TSM10N80
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: DS_P0000022
4
Version: D15
TSM10N80
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Drain Current vs. Case Temperature
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (ITO-220)
Document Number: DS_P0000022
5
Version: D15
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