TSM7N90
Taiwan Semiconductor
N-Channel Power MOSFET
900V, 7A, 1.9Ω
FEATURES
●
●
●
●
●
Low RDS(on) 1.9Ω (Max.)
Low gate charge typical @49nC (Typ.)
Improve dV/dt capability
Pb-free plating
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEE 2002/96/EC
●
Halogen-free according to IEC 61249-2-21
definition
KEY PERFORMANCE PARAMETERS
PARAMETER
V
DS
R
DS(on)
(max)
Q
g
VALUE
900
1.9
49
UNIT
V
Ω
nC
APPLICATION
●
Power Supply
●
Lighting
TO-220
ITO-220
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
(Note 2)
Total Power Dissipation @ T
C
= 25°C
Single Pulsed Avalanche Energy
(Note 3)
Single Pulsed Avalanche Current
(Note 3)
Operating Junction and Storage Temperature Range
T
C
= 25°C
T
C
= 100°C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
DTOT
E
AS
I
AS
T
J
, T
STG
250
106
7
- 55 to +150
TO-220
900
±30
7
4.31
28
40.3
ITO-220
UNIT
V
V
A
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJC
R
ӨJA
TO-220
0.5
62.5
ITO-220
3.1
UNIT
°C/W
°C/W
Notes:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air.
Document Number: DS_P0000144
1
Version: B15
TSM7N90
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Static
(Note 4)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(Note 6)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
(Note 4)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.
2.
3.
4.
5.
6.
Current limited by package.
Pulse width limited by the maximum junction temperature.
L = 4.1mH, I
AS
= 7A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
100% Eas Test Condition: L = 1mH, I
AS
= 3.5A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
Pulse test: PW
≤
300µs, duty cycle
≤
2%.
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature.
CONDITIONS
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±30V, V
DS
= 0V
V
DS
= 900V, V
GS
= 0V
V
GS
= 10V, I
D
= 3.5A
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(on)
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
MIN
900
2
--
--
--
--
--
--
--
--
TYP
--
--
--
--
1.52
49
7
20
1969
133
11
MAX
--
4
±100
10
1.9
--
--
--
--
--
UNIT
V
V
nA
µA
Ω
V
DS
= 720V, I
D
= 7A,
V
GS
= 10V
nC
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
pF
--
--
--
--
--
--
--
39
38
155
45
--
464
4.7
--
--
--
--
1.4
--
--
V
ns
μC
ns
V
DD
= 380V,
R
GEN
= 25Ω,
I
D
= 10A, V
GS
= 10V,
t
r
t
d(off)
t
f
V
SD
t
rr
Q
rr
I
S
= 10A, V
GS
= 0V
I
S
= 7A,
dI
F
/dt = 100A/μs
Document Number: DS_P0000144
2
Version: B15
TSM7N90
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSM7N90CZ C0G
TSM7N90CI C0G
PACKAGE
TO-220
ITO-220
PACKING
50pcs/Tube
50pcs/Tube
Document Number: DS_P0000144
3
Version: B15
TSM7N90
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Output Characteristics
I
D
, Continuous Drain Current (A)
I
D
, Continuous Drain Current (A)
Transfer Characteristics
V
DS
, Drain to Source Voltage (V)
On-Resistance vs. Drain Current
R
DS(on)
, Drain-Source On-Resistance
V
GS
, Gate to Source Voltage (V)
V
GS
, Gate to Source Voltage (V)
Gate Charge
I
D
, Continuous Drain Current (A)
On-Resistance vs. Junction Temperature
R
DS(on)
, Drain-Source On-Resistance
(Normalized)
Q
g
, Gate Charge (nC)
Source-Drain Diode Forward Current vs. Voltage
I
S
, Body Diode Forward Current (A)
T
J
, Junction Temperature (°C)
V
SD
, Body Diode Forward Voltage (V)
Document Number: DS_P0000144
4
Version: B15
TSM7N90
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Drain Current vs. Case Temperature
BV
DSS
(Normalized)
Drain-Source Breakdown Voltage (V)
T
C
, Case Temperature (°C)
Maximum Safe Operating Area (TO-220)
I
D
, Continuous Drain Current (A)
BV
DSS
vs. Junction Temperature
I
D
, Drain Current (A)
T
J
, Junction Temperature (°C)
Capacitance vs. Drain-Source Voltage
C, Capacitance (pF)
V
DS
, Drain to Source Voltage (V)
Maximum Safe Operating Area (ITO-220)
I
D
, Continuous Drain Current (A)
V
DS
, Drain to Source Voltage (V)
V
DS
, Drain to Source Voltage (V)
Document Number: DS_P0000144
5
Version: B15
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