TSM8N80
Taiwan Semiconductor
N-Channel Power MOSFET
800V, 8A, 1.4Ω
Features
●
●
●
Low R
DS(ON)
1.4Ω (Max.)
Low gate charge typical @ 41nC (Typ.)
Improve dV/dt capability
V
DS
R
DS(on)
(max)
Q
g
800
1.4
41
V
Ω
nC
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
APPLICATION
●
●
Power Supply
Lighting.
TO-220
ITO-220
Notes:
Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
SYMBOL
V
DS
V
GS
T
C
= 25°C
T
C
= 100°C
I
D
I
DM
P
DTOT
E
AS
I
AS
E
AR
dV/dt
T
J
, T
STG
TO-220
ITO-220
800
±30
8
4.9
32
UNIT
V
V
A
A
(Note 2)
Total Power Dissipation @ T
C
= 25°C
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
(Note 7)
(Note 3)
(Note 3)
250
160
8
25
4.5
40.3
W
mJ
A
mJ
V
°C
Operating Junction and Storage Temperature Range
- 55 to +150
THERMAL PERFORMANCE
PARAMETER
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJC
R
ӨJA
TO-220
0.5
62.5
ITO-220
3.1
UNIT
°C/W
°C/W
Notes:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design. R
ӨJA
shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000151
1
Version: D15
TSM8N80
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Static
(Note 4)
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
(Note 5)
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±30V, V
DS
= 0V
V
DS
= 800V, V
GS
= 0V
V
GS
= 10V, I
D
= 4.0A
V
DS
= 30V, I
D
= 4.0A
I
S
= 8A, V
GS
= 0V
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(ON)
g
fs
V
SD
Q
g
800
2.0
--
--
--
--
--
--
--
--
--
1.1
7
--
--
4.0
±100
10
1.4
--
1.5
V
V
nA
µA
Ω
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching
(Note 6)
--
--
--
--
--
--
--
41
10
11
1921
146
12
2.9
--
--
--
--
--
--
--
Ω
pF
nC
V
DS
= 640V, I
D
= 8.0A,
V
GS
= 10V
Q
gs
Q
gd
C
iss
C
oss
C
rss
R
g
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
F = 1MHz, open drain
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.
2.
3.
4.
5.
6.
7.
Current limited by package.
Pulse width limited by the maximum junction temperature.
L = 5mH, I
AS
= 8A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25 C.
Pulse test: PW
≤
300µs, duty cycle
≤
2%.
For DESIGN AID ONLY, not subject to production testing.
Switching time is essentially independent of operating temperature.
I
SD
≤
8A, dI/dt
≤
200A/uS, Vdd
≤
BV, Starting T
J
= 25 C.
o
o
t
d(on)
V
DD
= 400V,
R
GEN
= 25Ω,
I
D
= 8.0A, V
GS
= 10V,
(Note 4)
--
--
--
--
133
30
172
37
--
--
--
--
ns
t
r
t
d(off)
t
f
I
S
= 8.0A, V
GS
= 0V
V
GS
=0V, I
S
= 8A
dI
F
/dt = 100A/µs
V
SD
t
rr
Q
rr
--
--
--
--
479
5.5
1.5
--
--
V
ns
µC
Document Number: DS_P0000151
2
Version: D15
TSM8N80
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSM8N80CZ C0G
TSM8N80CI C0G
PACKAGE
TO-220
ITO-220
PACKING
50pcs / Tube
50pcs / Tube
Note:
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
Document Number: DS_P0000151
3
Version: D15
TSM8N80
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: DS_P0000151
4
Version: D15
TSM8N80
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
C
= 25°C unless otherwise noted)
Drain Current vs. Case Temperature
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area(TO-220)
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (ITO-220)
Document Number: DS_P0000151
5
Version: D15
stm32/stm8
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