Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7525-002
10.0
3.5
3.2
4.5
2.8
Product & Package Information
• Package
: TO-220ML(LS)
• JEITA, JEDEC
: SC-67, SOT-186A
• Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine
Marking
Electrical Connection
2
16.0
7.2
MS4007
LOT No.
3.6
1.6
1.2
1
14.0
0.75
1 2 3
0.7
2.4
3
1 : Gate
2 : Drain
3 : Source
TO-220ML(LS)
2.55
2.55
Semiconductor Components Industries, LLC, 2013
July, 2013
82510QA TK IM TC-00002454 No. A1820-1/5
BMS4007
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
IS=60A, VGS=0V
See Fig.3
IS=60A, VGS=0V, di/dt=100A/μs
VDS=48V, VGS=10V, ID=60A
See Fig.2
VDS=20V, f=1MHz
Conditions
ID=1mA, VGS=0V
VDS=75V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=30A
ID=30A, VGS=10V
Ratings
min
75
10
±10
2
110
6
9700
540
360
100
180
460
160
160
40
40
0.9
70
183
1.2
7.8
4
typ
max
Unit
V
μA
μA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Fig.1 Avalanche Resistance Test Circuit
D
≥50Ω
G
BMS4007
10V
0V
50Ω
S
VDD
L
Fig.2 Switching Time Test Circuit
10V
0V
VIN
VDD=48V
VIN
PW=10μs
D.C.≤1%
G
D
ID=30A
RL=1.6Ω
VOUT
BMS4007
P.G
50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
BMS4007
D
L
G
S
VDD
Driver MOSFET
No. A1820-2/5
BMS4007
120
ID -- VDS
8V
Tc=25
°
C
6V
120
ID -- VGS
VDS=10V
100
V 10V
100
Drain Current, ID -- A
80
Drain Current, ID -- A
15
80
60
60
Tc=7
5
°
C
0
0.5
1.0
1.5
2.0
2.5
3.0
40
40
VGS=4V
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
25
°
C
20
20
3.5
4.0
4.5
--25
°
5.0
5.5
C
6.0
Drain-to-Source Voltage, VDS -- V
18
RDS(on) -- VGS
IT15896
14
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
IT15897
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
16
14
12
10
8
6
4
2
3
ID=30A
Single pulse
Single pulse
12
10
8
6
4
2
0
--50
Tc=75
°
C
=
V GS
=30
V, I
D
10
A
25
°
C
--25
°
C
4
5
6
7
8
9
10
IT15922
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
3
|
y
fs
|
-- ID
Case Temperature, Tc --
°
C
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
IS -- VSD
IT15899
Forward Transfer Admittance,
|
y
fs
|
-- S
2
100
VDS=10V
VGS=0V
Single pulse
3
2
10
7
5
3
2
1.0
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
IT15900
0.4
Tc=
75
°
C
25
°
C
0.6
--25
°
C
0.8
Tc
C
5
°
--2
=
°
C
75
Source Current, IS -- A
7
5
°
C
25
1.0
1.2
1.4
IT15901
Drain Current, ID -- A
1000
7
SW Time -- ID
td(off)
3
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
VDD=48V
VGS=10V
Ciss, Coss, Crss -- pF
2
10000
7
5
3
2
f=1MHz
Ciss
Switching Time, SW Time -- ns
5
3
2
tf
100
7
5
0.1
2
3
td(on)
1000
7
5
3
tr
Coss
Crss
5 7 1.0
2
3
5 7 10
2
3
5 7 100
IT15902
2
0
5
10
15
20
25
30
IT15903
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
No. A1820-3/5
BMS4007
10
9
VGS -- Qg
VDS=48V
ID=60A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
7
5
3
2
10
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
IDP=240A (PW≤10μs)
ID=60A
8
7
6
5
4
3
2
1
0
0
50
100
150
200
IT15904
10
1m
10
s
DC
10
ms
ope
0m
rat
s
ion
10
μ
s
0
μ
s
Operation in
this area is
limited by RDS(on).
0.1
7
5
3
Tc=25°C
2
Single pulse
0.01
2 3 5 7 1.0
0.1
2
3
5 7 10
2
3
Total Gate Charge, Qg -- nC
2.5
PD -- Ta
Drain-to-Source Voltage, VDS -- V
35
PD -- Tc
5 7 100
2
IT15905
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
0
20
40
60
80
100
120
140
160
30
25
20
15
10
5
0
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
120
EAS -- Ta
IT15906
Case Temperature, Tc --
°C
IT15907
Avalanche Energy derating factor -- %
100
80
60
40
20
0
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta --
°C
No. A1820-4/5
BMS4007
Note on usage : Since the BMS4007 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
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