TSM60N900
600V, 4.5A, 0.9Ω
N-Channel Power MOSFET
ITO-220
TO-251
(IPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
V
DS
R
DS(on)
(max)
Q
g
Value
600
0.9
9.7
Unit
V
Ω
nC
TO-252
(DPAK)
Features
●
●
●
●
Super-Junction technology
High performance due to small figure-of-merit
High ruggedness performance
High commutation performance
Block Diagram
Application
●
●
Power Supply.
Lighting
Ordering Information
Part No.
TSM60N900CI C0G
TSM60N900CH C5G
Package
ITO-220
TO-251
Packing
50pcs / Tube
75pcs / Tube
N-Channel MOSFET
TSM60N900CP ROG
TO-252
2.5kpcs / 13” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
Absolute Maximum Ratings
(T
C
= 25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Symbol
V
DS
V
GS
T
C
= 25°C
I
D
I
DM
P
DTOT
E
AS
I
AS
T
J
, T
STG
(Note 2)
Limit
ITO-220
IPAK/DPAK
600
±30
4.5
13.5
20
81
1.8
- 55 to +150
50
Unit
V
V
A
A
W
mJ
A
°C
Total Power Dissipation @ T
C
= 25°C
Single Pulsed Avalanche Energy
(Note 3)
Single Pulsed Avalanche Current
(Note 3)
Operating Junction and Storage Temperature Range
1/9
Version: B14
TSM60N900
600V, 4.5A, 0.9Ω
N-Channel Power MOSFET
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
Symbol
R
ӨJC
R
ӨJA
Limit
ITO-220
6.25
62
IPAK/DPAK
2.5
Unit
°C/W
°C/W
Electrical Specifications
(T
C
= 25°C unless otherwise noted)
Parameter
Static
(Note 4)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Gate Resistance
Switching
(Note 6)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
(Note 4)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=4.5A, V
GS
=0V
V
R
=200V, I
S
=2.3A
dI
F
/dt=100A/μs
V
SD
t
rr
Q
rr
--
--
--
--
179
1.2
1.4
--
--
V
ns
μC
V
DD
= 380V,
R
GEN
= 4.7Ω,
I
D
= 2.3A, V
GS
= 10V,
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
12
16
22
12
--
--
--
--
ns
V
DS
= 380V, I
D
= 2.3A,
V
GS
= 10V
V
DS
= 100V, V
GS
= 0V,
f = 1.0MHz
f=1MHz, open drain
Q
g
Q
gs
Q
gd
C
iss
C
oss
R
g
--
--
--
--
--
--
9.7
2.3
3.6
480
36
3.4
--
--
--
--
--
--
pF
Ω
nC
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±30V, V
DS
= 0V
V
DS
= 600V, V
GS
= 0V
V
GS
= 10V, I
D
= 2.3A
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(ON)
600
2
--
--
--
--
3
--
--
0.72
--
4
±100
1
0.9
V
V
nA
µA
Ω
Conditions
Symbol
Min
Typ
Max
Unit
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
3. L=50mH, I
AS
=1.8A, V
DD
=50V, R
G
=25Ω, Starting T
J
= 25°C
4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
2/9
Version: B14
TSM60N900
600V, 4.5A, 0.9Ω
N-Channel Power MOSFET
Electrical Characteristics Curves
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge vs. Gate-Source Voltage
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage vs. Current
3/9
Version: B14
TSM60N900
600V, 4.5A, 0.9Ω
N-Channel Power MOSFET
Electrical Characteristics Curves
Capacitance vs. Drain-Source Voltage
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area (DPAK/IPAK)
Maximum Safe Operating Area (ITO-220)
4/9
Version: B14
TSM60N900
600V, 4.5A, 0.9Ω
N-Channel Power MOSFET
Electrical Characteristics Curves
Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK)
Normalized Effective Transient
Thermal Impedance
10
10
10
10
10
0
1
-1
-2
-3
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10
-6
10
-7
10
-4
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220)
Normalized Effective Transient
Thermal Impedance
10
0
10
-1
10
-2
10
-3
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10
-7
10
-4
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (s)
5/9
Version: B14
测试/测量
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