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TST20H100CW C0G

产品描述DIODE SCHOTTKY 100V 10A TO220AB
产品类别半导体    分立半导体   
文件大小210KB,共5页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 选型对比 全文预览

TST20H100CW C0G概述

DIODE SCHOTTKY 100V 10A TO220AB

TST20H100CW C0G规格参数

参数名称属性值
二极管类型肖特基
电压 - DC 反向(Vr)(最大值)100V
电流 - 平均整流(Io)10A
不同 If 时的电压 - 正向(Vf790mV @ 10A
速度快速恢复 =< 500 ns,> 200mA(Io)
不同 Vr 时的电流 - 反向漏电流200µA @ 100V
安装类型通孔
封装/外壳TO-220-3
供应商器件封装TO-220AB
工作温度 - 结-55°C ~ 150°C

文档预览

下载PDF文档
TST20H100CW thru TST20H200CW
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters,
lighting and on-board DC/DC converters.
MECHANICAL DATA
Case:
TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average
forward rectified current
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
TYP
Instantaneous forward
voltage per diode
(Note1)
I
F
= 5A
I
F
= 10A
I
F
= 5A
I
F
= 10A
Instantaneous reverse current per
diode at rated reverse voltage
Typical thermal resistance per diode
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
T
J
= 25°C
V
F
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
R
R
θJC
T
J
T
STG
0.57
0.67
0.50
0.59
-
8
MAX
-
0.79
-
0.68
200
25
TYP
0.62
0.78
0.53
0.63
-
10
-
0.89
-
0.72
200
30
2.8
- 55 to +150
- 55 to +150
TST20H
100CW
100
TST20H
120CW
120
20
10
150
10000
MAX
TYP
0.72
0.81
0.58
0.66
-
3
MAX
-
0.90
-
0.75
100
15
TYP
0.77
0.83
0.62
0.68
-
3
MAX
-
0.93
-
0.78
100
15
O
TST20H
150CW
150
TST20H
200CW
200
UNIT
V
A
A
V/μs
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load per diode
Voltage rate of change (Rated V
R
)
V
μA
mA
C/W
O
O
C
C
Document Number: DS_D1411058
Version: E14

TST20H100CW C0G相似产品对比

TST20H100CW C0G TST20H120CWC0G TST20H120CW C0G TST20H200CW C0G TST20H100CWC0G
描述 DIODE SCHOTTKY 100V 10A TO220AB Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 120V V(RRM), Silicon, TO-220AB, DIODE SCHOTTKY 120V 10A TO220AB DIODE SCHOTTKY 200V 10A TO220AB Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-220AB,
二极管类型 肖特基 RECTIFIER DIODE 肖特基 肖特基 RECTIFIER DIODE
电压 - DC 反向(Vr)(最大值) 100V - 120V 200V -
电流 - 平均整流(Io) 10A - 10A 10A -
不同 If 时的电压 - 正向(Vf 790mV @ 10A - 900mV @ 10A 930mV @ 10A -
速度 快速恢复 =< 500 ns,> 200mA(Io) - 快速恢复 =< 500 ns,> 200mA(Io) 快速恢复 =< 500 ns,> 200mA(Io) -
不同 Vr 时的电流 - 反向漏电流 200µA @ 100V - 100µA @ 120V 100µA @ 200V -
安装类型 通孔 - 通孔 通孔 -
封装/外壳 TO-220-3 - TO-220-3 TO-220-3 -
供应商器件封装 TO-220AB - TO-220AB TO-220AB -
工作温度 - 结 -55°C ~ 150°C - -55°C ~ 150°C -55°C ~ 150°C -

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