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PESDxUSB30 series
ESD protection for differential data lines
Rev. 2 — 26 April 2016
Product data sheet
1. Product profile
1.1 General description
The devices are ElectroStatic Discharge (ESD) protection for one, two and three
differential channels.
It is footprint compatible to PCMFxUSB30 common mode filters with ESD protection.
The diodes provide protection to downstream components from ESD voltages up to
15
kV on each signal line.
Table 1.
Product overview
Number of channels Package Name
1
2
3
WLCSP5
WLCSP10
WLCSP15
Type number
PESD1USB30
PESD2USB30
PESD3USB30
1.2 Features and benefits
Allows switching between
ESD protection for one, two and three
PCMFxUSB30 common mode filters
differential channels up to
15
kV
with ESD protection and PESDxUSB30
contact discharge according to
ESD protection in the same footprint
IEC 61000-4-2
TREOS protection process for very high
Industry-standard WLCSP5, 10 and 15
system-level ESD robustness: superior
packages for smallest footprint
protection of sensitive Systems on Chips
(SoCs)
1.3 Applications
Smartphone, cellular and cordless
phone
USB3.1, USB2.0, HDMI2.0, HDMI1.4
Tablet PC and Mobile Internet
Device (MID)
MIPI D-PHY as used in Camera Serial
Interface (CSI) and Display Serial
Interface (DSI)
General-purpose downstream ESD
protection for differential data lines
NXP Semiconductors
PESDxUSB30 series
ESD protection for differential data lines
2. Pinning information
Table 2.
Pin
A1
A2
B1
C1
C2
Pinning
Description
channel 1+, external
channel 1, external
ground channel 1
channel 1+, internal
channel 1, internal
1
A
B
C
A1
2
B1
A2
C1
C2
Symbol
CH1_IN+
CH1_IN
GND_CH1
CH1_OUT+
CH1_OUT
Simplified outline
Graphic symbol
PESD1USB30 (WLCSP5_2-1-2)
Transparent top view
WLCSP5_2-1-2
B1
aaa-021381
PESD2USB30 (WLCSP10_4-2-4)
A1
A2
A3
A4
B1
B2
C1
C2
C3
C4
CH1_IN+
CH1_IN
CH2_IN+
CH2_IN
GND_CH1
GND_CH2
CH1_OUT+
CH1_OUT
CH2_OUT+
CH2_OUT
channel 1+, external
channel 1, external
channel 2+, external
channel 2, external
ground channel 1
ground channel 2
channel 1+, internal
channel 1, internal
channel 2+, internal
channel 2, internal
1
A
B
C
3
A1, 3
4
B2
A2, 4
C1, 3
C2, 4
2
B1
B1, B2 - no internal connection
aaa-021384
Transparent top view
WLCSP10_4-2-4
PESD3USB30 (WLCSP15_6-3-6)
A1
A2
A3
A4
A5
A6
B1
B2
B3
C1
C2
C3
C4
C5
C6
CH1_IN+
CH1_IN
CH2_IN+
CH2_IN
CH3_IN+
CH3_IN
GND_CH1
GND_CH2
GND_CH3
CH1_OUT+
CH1_OUT
CH2_OUT+
CH2_OUT
CH3_OUT+
CH3_OUT
channel 1+, external
channel 1, external
channel 2+, external
channel 2, external
channel 3+, external
channel 3, external
ground channel 1
ground channel 2
ground channel 3
channel 1+, internal
channel 1, internal
channel 2+, internal
channel 2, internal
channel 3+, internal
channel 3, internal
A
B
C
Transparent top view
2
B1
1
3
5
A1, 3, 5
6
B3
A2, 4, 6
C1, 3, 5
C2, 4, 6
4
B2
B1, B2, B3 - no internal connection
aaa-021385
WLCSP15_6-3-6
PESDXUSB30_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 26 April 2016
2 of 19
NXP Semiconductors
PESDxUSB30 series
ESD protection for differential data lines
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD1USB30
PESD2USB30
PESD3USB30
WLCSP5
WLCSP10
WLCSP15
Description
wafer level chip-size package; 5 bumps (2-1-2)
wafer level chip-size package; 10 bumps (4-2-4)
wafer level chip-size package; 15 bumps (6-3-6)
Type number
4. Marking
Table 4.
Marking codes
Marking code
PD1S
PD2S
PD3S
Type number
PESD1USB30
PESD2USB30
PESD3USB30
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
I
V
ESD
Parameter
input voltage
electrostatic discharge
voltage
IEC 61000-4-2, level 4;
all input pins to ground
contact discharge
air discharge
IEC 61000-4-2, level 4;
all output pins to ground
contact discharge
air discharge
I
PPM
T
stg
T
amb
rated peak-pulse
current
storage temperature
ambient temperature
t
p
= 8/20
s
-2
-2
-8
-40
-40
2
2
8
+125
+85
kV
kV
A
°C
°C
-15
-15
15
15
kV
kV
Conditions
Min
-0.5
Max
5
Unit
V
PESDXUSB30_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 26 April 2016
3 of 19
NXP Semiconductors
PESDxUSB30 series
ESD protection for differential data lines
6. Characteristics
6.1 Channel characteristics
Table 6.
Channel characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
C
d
I
RM
V
BR
V
F
R
dyn
diode capacitance
reverse leakage current
breakdown voltage
forward voltage
dynamic resistance
Conditions
f = 1 MHz; V
I
= 2.5 V
per line; V
I
= 5 V
I
R
= 1 mA
I
F
= 10 mA
TLP
positive transient
negative transient
surge
positive transient
negative transient
[1]
[2]
[3]
This parameter is guaranteed by design.
100 ns Transmission Line Pulse (TLP); 50
;
pulser at 70 to 90 ns.
According to IEC 61000-4-5 (8/20
s).
[3]
[2]
[1]
Min
-
-
6
-
-
-
-
-
Typ
0.45
1
9
0.8
0.16
0.16
0.25
0.25
Max
-
100
-
-
-
-
-
-
Unit
pF
nA
V
V
6.2 Frequency characteristics
Table 7.
Frequency characteristics
Conditions
[1]
Symbol Parameter
Differential mode: S
21dd
f
3dB
[1]
Min
-
Typ
17
Max
-
Unit
GHz
cut-off frequency
Normalized to attenuation at 1 MHz.
PESDXUSB30_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2016. All rights reserved.
Product data sheet
Rev. 2 — 26 April 2016
4 of 19
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