PE4314
Document Category: Product Specification
UltraCMOS® RF Digital Step Attenuator, 1 MHz–2.5 GHz
Features
• Attenuation step of 0.5 dB up to 31.5 dB
• Glitch-less attenuation state transitions
• Low distortion for CATV and multi-carrier applica-
tions
• Extended +105 °C operating temperature
• Parallel and Serial programming interfaces
• Packaging – 20-lead 4 × 4 × 0.85 mm QFN
Figure 1 •
PE4314 Functional Diagram
Switched Attenuator Array
RF
Input
RF
Output
Applications
• DOCSIS 3.1/0 customer premises equipment
(CPE) and infrastructure
• Satellite CPE and infrastructure
• Fiber CPE and infrastructure
Parallel
Control
6-bit
Serial
Control
3-bit
Power-up
Control
2-bit
Control Logic Interface
P/S
V
SS_EXT
(optional)
Product Description
The PE4314 is a 75Ω HaRP™ technology-enhanced, 6-bit RF digital step attenuator (DSA) that supports a
frequency range from 1 MHz to 2.5 GHz. It features glitch-less attenuation state transitions and supports 1.8V
control voltage and an extended operating temperature range up to +105 °C, making this device ideal for
multiple wired broadband applications.
The PE4314 is a pin-compatible upgraded version of the PE4304, PE4307, PE4308 and PE43404. An
integrated digital control interface supports both Serial and Parallel programming of the attenuation, including
the capability to program an initial attenuation state at power up.
The PE4314 covers a 31.5 dB attenuation range in a 0.5 dB step. It is capable of maintaining 0.5 dB monoto-
nicity through 2.5 GHz. In addition, no external blocking capacitors are required if 0 VDC is present on the RF
ports.
The PE4314 is manufactured on Peregrine’s UltraCMOS
®
process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate.
©2015–2016, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification
www.psemi.com
DOC-81718-1 – (02/2017)
PE4314
RF Digital Step Attenuator
Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Optional External V
SS
For proper operation, the V
SS_EXT
pin must be grounded or tied to the V
SS
voltage specified in
Table 2.
When the
V
SS_EXT
pin is grounded, FETs in the switch are biased with an internal negative voltage generator. For applica-
tions that require the lowest possible spur performance, V
SS_EXT
can be applied externally to bypass the internal
negative voltage generator.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in
Table 1
may cause permanent damage. Operation should be
restricted to the limits in
Table 2.
Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in
Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 •
Absolute Maximum Ratings for PE4314
Parameter/Condition
Supply voltage, V
DD
Digital input voltage
RF input power, 75Ω
1–30 MHz
≥30
MHz–2.5 GHz
Storage temperature range
ESD voltage HBM
(1)
, all pins
ESD voltage CDM
(2)
, all pins
Notes:
1) Human body model (MIL-STD 883 Method 3015).
2) Charged device model (JEDEC JESD22-C101).
Min
–0.3
–0.3
Max
5.5
3.6
Unit
V
V
See
Fig. 5
+30
–65
+150
1500
1000
dBm
dBm
°C
V
V
Page 2
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DOC-81718-1 – (02/2017)
PE4314
RF Digital Step Attenuator
Recommended Operating Conditions
Table 2
lists the recommended operating conditions for the PE4314. Devices should not be operated outside the
recommended operating conditions listed below.
Table 2 •
Recommended Operating Conditions for PE4314
Parameter
Normal mode, V
SS_EXT
= 0V
(1)
Supply voltage, V
DD
Supply current, I
DD
2.3
3.3
130
5.5
200
V
µA
Min
Typ
Max
Unit
Bypass mode, V
SS_EXT
= –3.4V
(2)
Supply voltage, V
DD
(Table
3
spec compliance applies for V
DD
≥
3.4V.)
Supply current, I
DD
Negative supply voltage, V
SS_EXT
Negative supply current, I
SS
–3.6
–40
–16
2.7
3.4
50
5.5
80
–3.2
V
µA
V
µA
Normal or bypass mode
Digital input high
Digital input low
Digital input current
(3)
RF input power, CW
(4)
1–30 MHz
≥30
MHz–2.5 GHz
RF input power, pulsed
(5)
1–30 MHz
≥30
MHz–2.5 GHz
Operating temperature range
Notes:
1) Normal mode: connect V
SS_EXT
(pin 12) to GND (V
SS_EXT
= 0V) to enable internal negative voltage generator.
2) Bypass mode: use V
SS_EXT
(pin 12) to bypass and disable internal negative voltage generator.
3) Applies to all pins except pins 1, 5, 7 and 20. Pins 1, 7 and 20 have an internal 1 MΩ pull-down resistor to ground and pin 5 has an internal 2 MΩ
pull-up resistor to internal V
DD
.
4) 100% duty cycle, all bands, 75Ω.
5) Pulsed, 5% duty cycle of 4620 µs period, 75Ω.
1.17
–0.3
3.6
0.6
20
V
V
µA
Fig. 5
+24
dBm
dBm
Fig. 5
+27
–40
+25
+105
dBm
dBm
°C
DOC-81718-1 – (02/2017)
www.psemi.com
Page 3
PE4314
RF Digital Step Attenuator
Electrical Specifications
Table 3
provides the PE4314 key electrical specifications @ +25 °C, Z
S
= Z
L
= 75Ω, unless otherwise specified.
Normal mode
(1)
is @ V
DD
= 3.3V and V
SS_EXT
= 0V. Bypass mode
(2)
is @ V
DD
= 3.4V and V
SS_EXT
= –3.4V.
Table 3 •
PE4314 Electrical Specifications
Parameter
Operating frequency
Attenuation range
0.5 dB step
1–204 MHz
204–870 MHz
870–1218 MHz
1218–2500 MHz
1–204 MHz
204–1218 MHz
Attenuation error
Any bit or bit combination
1218–1794 MHz
1794–2500 MHz
1–204 MHz
204–870 MHz
Input and output ports, refer-
ence state
870–1794 MHz
1794–2500 MHz
870 MHz
1000 MHz
1218 MHz
30–2500 MHz
0 dB
5 MHz
10 MHz
17 MHz
35 MHz
500 MHz
1000 MHz
1900 MHz
2500 MHz
70
76
80
88
104
106
98
110
19
17
16
19
9
11
14
30
31.5 dB
100
101
104
105
110
113
102
99
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Condition
Frequency
Min
1 MHz
Typ
Max
2.5 GHz
Unit
As
shown
dB
0–31.5
1.0
1.2
1.3
1.5
1.25
1.50
1.80
1.90
±(0.15 + 2% of
attenuation setting)
±(0.15 + 3% of
attenuation setting)
±(0.15 + 4% of
attenuation setting)
± (0.15 + 8% of
attenuation setting)
Insertion loss
Reference state
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
deg
deg
dBm
See
Fig. 13–
Fig. 17
Return loss
Relative phase
All states
Input 0.1dB compression
point
(3)
Input IP2
Two tones at +15 dBm
10 kHz spacing
0 dB and 31.5 dB attenua-
tion states
Page 4
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DOC-81718-1 – (02/2017)
PE4314
RF Digital Step Attenuator
Table 3 •
PE4314 Electrical Specifications (Cont.)
Parameter
Condition
Frequency
Min
0 dB
5 MHz
10 MHz
17 MHz
35 MHz
500 MHz
1000 MHz
1900 MHz
2500 MHz
57
69
63
62
62
59
60
58
7
1.8
0.4
370
250 MHz
0.5
700
Typ
31.5 dB
62
61
62
61
62
55
55
57
Max
Unit
Input IP3
Two tones at +15 dBm
10 kHz spacing
0 dB and 31.5 dB attenua-
tion states
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
mV
PP
µs
µs
ns
dB
Video feed-through
Settling time
Settling time
Switching time
Attenuation transient
(envelope)
Notes:
DC measurement
50% CTRL to 0.05 dB of
final value
50% CTRL to 0.5 dB of final
value
50% CTRL to 90% or 10%
RF
1) Normal mode: connect V
SS_EXT
(pin 12) to GND (V
SS_EXT
= 0V) to enable internal negative voltage generator.
2) Bypass mode: use V
SS_EXT
(pin 12) to bypass and disable internal negative voltage generator.
3) The input 0.1dB compression point is a linearity figure of merit. Refer to
Table 2
for the operating RF input power (75Ω).
DOC-81718-1 – (02/2017)
www.psemi.com
Page 5
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