Semiconductor Catalog Sep. 2014
Small and Medium Diodes
h t t p : / / t o s h i b a . s e m i c o n - s t o r a g e . c o m /
SEMICONDUCTOR
&
STORAGE PRODUCTS
Small and Medium Diodes
Recently, many products ranging from computers and home appliances to automobiles and industrial
equipment have been driving the need for effective solutions to reduce size and weight.
Semiconductor requirements differ from application to application. Take power supplies for example,
which are being required to accommodate higher capacity in smaller dimensions. This increases the
temperature at which systems are operated.
To meet these requirements, Toshiba offers an extensive portfolio of small, high-efficiency diodes,
including Schottky barrier diodes (SBDs) featuring high-speed operation and low forward loss.
Diodes
Schottky Barrier Diodes (SBDs)
Toshiba offers low-loss SBDs fabricated with a next-generation process. These SBDs
will help increase the performance of equipment that requires a small form factor and
high efficiency, such as mobile devices and switching power supplies.
SBDs with a reverse voltage of 20 V to 60 V and an average forward current of 0.7 A
to 5 A are available in small surface-mount packages. You will find SBDs that best suit
your applications.
Rectifier Diodes
General-Purpose Rectifiers and reverse-current protection
Super-Fast-Recovery Diodes (S-FRDs)
High-Efficiency Diodes (HEDs)
Diodes with a reverse voltage of 200 V to 1000 V and an average forward current of
0.5 A to 3 A are available in small surface-mount packages. Toshiba’s product portfolio
also includes diodes with high ESD performance ideal for automotive applications.
Zener Diodes
Zener diodes are available with a wide range of Zener voltage specifications from
6.2 V to 82 V. They can be used for a wide range of applications such as consumer,
automotive and industrial electronics.
Product Lines
.................................................................... 2
Product Lineup
.................................................................. 3
[Product Descriptions]
Schottky Barrier Diodes (SBDs)
........................................... 4
Rectifier Diodes
................................................................. 6
Zener Diodes
.................................................................... 8
This brochure contains information on small and medium diodes only.
For switching diodes, small-signal Schottky barrier diodes and ESD
protection diodes, see the following brochure or our homepage:
[Product Lineup]
.............................................................. 10
Device Marking
................................................................ 13
Homepage
Brochure
http://toshiba.semicon-storage.com/
Discrete Semiconductors, Linear ICs, Logic ICs
2
Product Lineup
Surface-Mount Package Trend for Diodes
In order to help improve the performance of information and communications equipment, Toshiba offers high-efficiency diodes in small
surface-mount packages.
Package Mounting Areas and Heights
2.2
Package for dual diodes
Mounting area: 8.0 mm
2
(Height: 0.98 mm)
2.0
1.8
SMA-equivalent (DO-214AC) package
1.6
Package Height (mm)
1.4
1.2
1.0
S-FLAT
TM
0.8
0.6
0.4
0.2
0
2
4
6
8
Footprint Area (mm
2
)
Lead
Chip
Epoxy resin
Lead
Lead Clamp Structure
10
12
14
16
US-FLAT
TM
M-FLAT
TM
Performance equivalent to
the SMA package
HM-FLAT
Mounting area: 87%
Height: 50%
Internal Structure of FLAT Packages
The FLAT packages have a lead clamp structure to reduce wire inductance and
resistance and improve heat dissipation performance. Without a conventional
wirebonded structure, these packages provide a higher surge capability.
FLAT Package Series
US-FLAT
TM
Ultra Small Flat
Package
Typical product: CUS01, CUS10I30A
Thickness:
0.6 typ.
S-FLAT
TM
Small Flat
Package
Typical product: CRS01, CRS10I30A
Thickness:
0.98 typ.
M-FLAT
TM
Middle Flat
Package
Typical product: CMS01, CMS10I30A
2.4
3.8
Thickness:
0.98 typ.
HM-FLAT
Hybrid Middle Flat
Package
Typical product: HMG02
2.4
2.6
Thickness:
0.98 typ.
1.6
1.25
1.9
2.6
2.5
Unit: mm
3.5
4.7
Unit: mm
Unit: mm
3.35
Unit: mm
Recommended PCB land pattern dimensions
(Unit: mm)
0.8
0.8
1.2
1.2
2.1
1.4
0.8
1.0
3.0
4.4
1.4
1.9
1.1
Note: The PCB land pattern dimensions shown above are for reference only and should be determined empirically.
2.0
2.8
3
Schottky Barrier Diodes (SBDs)
Schottky barrier diodes (SBDs) have a junction formed between a semiconductor and a metal such as molybdenum, instead of a PN
junction. Unlike PN junction diodes, SBDs are majority carrier devices. Therefore, SBDs feature low forward voltage and short reverse
recovery time, making them ideal for high-speed switching applications.
Toshiba offers SBDs fabricated using a new process that provides an improved V
F
-I
RRM
trade-off. These new SBDs, together with
conventional SBDs, will meet diverse design requirements.
Schottky-Barrier Diodes (SBDs) with Improved Trade-Off
Toshiba now offers small to medium SBDs fabricated with a new process.
Owing to low peak forward voltage (V
FM
) and low repetitive peak reverse
current (I
RRM
) characteristics, these SBDs provide low power loss and
thus help reduce the size and improve the power efficiency of mobile
handsets, switching power supplies, etc.
Voltage rating: V
RRM
= 30 V, 40 V
Current rating: I
F(AV)
=1 A to 3 A
Peak forward voltage (Typical characteristics: CRS10I30A)
V
FM
= 0.35 V typ.
0.39 V max (@I
FM
= 0.7 A)
Small surface-mount packages (US-FLAT /S-FLAT /M-FLAT )
TM
TM
TM
Improved Trade-off Between Forward
Voltage and Reverse Current
1000
Reverse Current, I
RRM
(μA)
(@V
RRM
= 30 V)
100
Conventional SBDs
10
SBD series with
improved trade-off
1
0.25
0.3
0.35
0.4
0.45
0.5
Forward Voltage, V
FM
(V)
(@I
F
= 0.7 A)
Comparison of SBDs with the same junction area
Application Example: Notebook PC
DC-DC Converter
Reverse-battery protection
DC-DC
Load Switch
Battery Charger
AC Adapter
45 W
15 V, 3 A
60 W
15 V, 4 A
1.5 V/1.5 A
1.8 V/1.5 A
3 V/5 A
Secondary
Battery
Main
Battery
5 V/5 A
Reverse-current protection
Applications
Reverse-battery and
reverse-current protection
DC-DC converters
Package
US-FLAT
TM
S-FLAT
TM
M-FLAT
TM
S-FLAT
TM
M-FLAT
TM
Recommended Diodes
CUS01, CUS02, CUS10I30A, CUS15I30A
CRS01, CRS03, CRS05, CRS06, CRS08, CRS09, CRS11, CRS14
CMS01, CMS03, CMS06, CMS07, CMS08, CMS09, CMS16
CRS03, CRS04, CRS05, CRS09, CRS13, CRS10I30A, CRS15I30A, CRS20I30A
CMS03, CMS05, CMS14, CMS15, CMS20I30A, CMS30I30A, CMS20I40A, CMS30I40A
4
Product Selection Guide
See page 10 for electrical specifications.
Average Forward
Current, I
F(AV)
0.7 A
Package
US-FLAT
TM
US-FLAT
TM
CUS05
CUS06
CRS06
1A
S-FLAT
TM
CUS01
CUS02
CUS10I30A
CRS01
CRS03
CRS05
CRS11
CRS10I30A
CRS10I30B
CRS10I30C
CMS08
CMS09
CMS10I30A
CUS15I30A
CRS08
CRS09
CRS15I30A
CRS15I30B
CRS14
CRS20I30A
CRS20I30B
CMS06
CMS07
CMS17
CMS20I30A
CRS15
CRS30I30A
CMS01
CMS03
CMS30I30A
CMS04
CMS05
Repetitive Peak Reverse Voltage, V
RRM
20 V
30 V
40 V
CUS03
CUS10I40A
60 V
CUS04
CRS04
CRS10I40A
CRS10I40B
CRS12
CRS13
M-FLAT
TM
US-FLAT
TM
1.5 A
S-FLAT
TM
M-FLAT
TM
S-FLAT
TM
2A
M-FLAT
TM
S-FLAT
TM
3A
M-FLAT
TM
M-FLAT
TM
CMS10
CMS10I40A
CRS15I40A
CMS15I40A
CRS20I40A
CRS20I40B
CMS11
CMS20I40A
CMS14
CMS16
CMS30I40A
CMS15
5A
: I
F(DC)
= 3 A
Part Naming Conventions
SBDs with improved trade-offs
CR S 10 I 30 A
CU
CR
CM
1
Package style
US-FLAT
S-FLAT
M-FLAT
2
Diode type
Schottky barrier diode
1
2 3 4 5 6
6
Additional feature
Suffix that indicates an additional feature
Uppercase letter starting with A
5
Reverse voltage, V
RRM
(Repetitive peak reverse voltage)
4
Product feature
I
Low forward voltage &
low leakage current
(New SBD series)
Integer indicating the rated voltage
Example: 30 V 30
S
3
Average forward current, I
F(AV)
Integer indicating ten times
the rated current
Example: 1.0 A 10
Part Naming Conventions
Conventional SBDs
CR S 01
CU
CR
CM
1
Package style
US-FLAT
S-FLAT
M-FLAT
2
Diode type
Schottky barrier diode
1
2 3
3
Part number
Two-digit sequential number starting with 01
S
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
