1-1-4 Linear Regulator ICs
SI-3000ZD Series
Surface-Mount, Low Dropout Voltage
■Features
• Compact surface-mount package (TO263-5)
• Output current: 3.0A
• Low dropout voltage: V
DIF
≤
0.6V (at I
O
= 3.0A)
• Low circuit current at output OFF: Iq (OFF)
≤
1
µ
A
• Built-in overcurrent and thermal protection
circuits
■Absolute
Maximum Ratings
Parameter
DC Input Voltage
Output Control Terminal Voltage
DC Output Current
Power Dissipation
Junction Temperature
Operating Ambient Temperature
Storage Temperature
Thermal Resistance (Junction to Ambient Air)
Thermal Resistance (Junction to Case)
Symbol
V
IN*1
V
C
I
O*1
P
D*3
T
j
T
op
T
stg
Ratings
10
6
3.0
3
–30 to +125
–30 to +85
–40 to +125
33.3
3
Unit
V
V
A
W
°C
°C
°C
°C/W
°C/W
(T
a
=25°C)
■Applications
• Secondary stabilized power supply (local
power supply)
θ
j-a
θ
j-c
■Recommended
Operating Conditions
Parameter
Input Voltage
Output Current
Operating Ambient Temperature
Operating Junction Temperature
Output Voltage Variable Range
Symbol
V
IN
I
O
T
op (a)
T
op (j)
V
OADJ
Ratings
*2
Unit
V
A
°C
°C
V
Remarks
to
6
*1
0 to 3
–20 to +85
–20 to +100
1.2 to 5
Only for SI-3011ZD. Refer to the block diagram.
*1: V
IN
(max) and I
O
(max) are restricted by the relation P
D
= (V
IN
- V
O
)
×
I
O
.
*2: Set the input voltage to 2.4V or higher when setting the output voltage to 2.0V or lower (SI-3011ZD).
*3: When mounted on glass-epoxy board of 40
×
40mm (copper laminate area 100%).
■Electrical
Characteristics
Ratings
Parameter
Output Voltage
(Reference Voltage V
ADJ
for SI-3011ZD)
Line Regulation
Load Regulation
Dropout Voltage
Quiescent Circuit Current
Circuit Current at Output OFF
Temperature Coefficient
of Output Voltage
Ripple Rejection
Overcurrent Protection Starting Current
*2
*4
(T
a
=25°C, V
C
=2V, unless otherwise specified)
SI-3011ZD (Variable type)
min.
typ.
1.100
V
IN
=V
O
+1V, I
O
=10mA
10
V
IN
=3.3 to 5V, I
O
=10mA (V
O
=2.5V)
40
V
IN
=3.3V, I
O
=0 to 3A (V
O
=2.5V)
0.6
I
O
=3A (V
O
=2.5V)
1
V
IN
=V
O
+1V, I
O
=0A, V
C
=2V
1
V
IN
=V
O
+1V, V
C
=0V
±0.3
T
j
=0 to 100°C
60
V
IN
=V
O
+1V, f=100 to 120H
Z
, I
O
=0.1A
3.2
V
IN
=V
O
+1V
2
0.8
100
V
C
=2.7V
–5
0
V
C
=0V
–5
V
C
=2.7V
0
V
C
=0V
2
0.8
100
3.2
V
IN
=5V
V
IN
=5V, V
C
=0V
±0.3
T
j
=0 to 100°C
60
V
IN
=5V, f=100 to 120H
Z
, I
O
=0.1A
1.5
I
O
=3A
1
V
IN
=5V, I
O
=0A, V
C
=2V
1
1.5
V
IN
=5V, I
O
=0 to 3A
0.6
V
IN
=4.5 to 5.5V, I
O
=10mA
40
max.
1.122
min.
3.234
1.078
SI-3033ZD
typ.
3.300
V
IN
=5V, I
O
=10mA
10
max.
3.366
V
mV
mV
V
mA
Unit
Symbol
V
O
(V
ADJ
)
Conditions
∆V
OLINE
Conditions
∆V
OLOAD
Conditions
V
DIF
Conditions
I
q
Conditions
I
q
(OFF)
Conditions
∆V
O
/∆T
a
Conditions
R
REJ
Conditions
I
S1
Conditions
V
C
, IH
V
C
, IL
I
C
, IH
Conditions
I
C
, IL
Conditions
µ
A
mV/
°C
dB
A
V
Control Voltage (Output ON)
*3
Control Voltage (Output OFF)
*3
V
C
Control Current(Output ON)
Terminal
Control Current(Output OFF)
µ
A
µ
A
*1: Set the input voltage to 2.4V or higher when setting the output voltage to 2.0V or lower.
*2: I
S1
is specified at the –5% drop point of output voltage V
O
under the condition of Output Voltage parameter.
*3: Output is OFF when the output control terminal (V
C
terminal) is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs.
*4: These products cannot be used for the following applications because the built-in foldback-type overcurrent protection may cause errors during start-up stage.
(1) Constant current load (2) Positive and negative power supply (3) Series-connected power supply (4) V
O
adjustment by raising ground voltage
80
ICs
SI-3000ZD Series
■External
Dimensions (TO263-5)
Case temperature
measurement point
10.0
±0.2
(Unit : mm)
(0.40)
±0.2
(8.0)
4.5
3-R0.3
±0.2
1.2
(15°)
(4.4)
1.3
–0.05
+0.10
(4.6)
(1.75)
(6.8)
±0.2
9.2±
±0.3
9.2
±0.2
φ
1.5 Dp:
±0.2
(3°)
(2×R0.45)
(3°)
±0.1
0.10
(3°)
2.4
(R0.3)
±0.3
±0.2
±0.2
2.0
15.30
±0.15
0.88
±0.10
(R0.3)
0~6°
±0.1
(0.5)
(1.7
±0.25
)
1
2
3
4
9.9
±0.2
0.8
±0.25
)
(1.7
5
(3°)
±0.1
(1.7
±0.25
)
0.8
±0.25
(1.7
)
Pin Assignment
q
V
C
w
V
IN
e
GND (Common to the rear side of product)
r
V
O
t
Sense
(ADJ for SI-3011ZD)
Plastic Mold Package Type
Flammability: UL94V-0
Product Mass: Approx. 1.48g
15.3
±0.3
(0.75)
4.9
(3°)
2-R0.3
0.1
10.0
±0.02
■Block
Diagram
SI-3011ZD
V
IN
+
2.54
4.9
±0.2
2
4
V
O
R3
*
C
IN
REF
+
+
R1
+
Drive
TSD
OCP
AMP1
5
ADJ
C
O
R2
C
IN
: Input capacitor (Approx. 10
µ
F)
C
O
: Output capacitor (47
µ
F or larger)
The output voltage may oscillate if a low ESR type capacitor
(such as a ceramic capacitor) is used for the output capacitor in
the SI-3000ZD Series.
V
C
ON/
OFF
1
-
-
+
SI-3033ZD
V
IN
+
2
C
IN
REF
+
+
TSD
OCP
AMP1
C
O
V
C
ON/
OFF
1
-
-
+
3
GND
■Reference
Data
Copper Laminate Area (on Glass-Epoxy Board) vs.
Thermal Resistance (from Junction to Ambient Temperature) (Typical Value)
55
Junction to Ambient Temperature
Thermal Resistance
θ
j-a (°C/W)
50
When Using Glass-Epoxy Board of 40
×
40 mm
45
40
35
30
0
200
400
600
800
1000
1200
1400
1600
1800
Copper Laminate Area (mm
2
)
+
Drive
-
-
3
GND
4
5
V
O
SENSE
R1, R2: Output voltage setting resistors
The output voltage can be set by connecting R1 and R2 as shown
at left.
The recommended value for R2 is 10kΩ or 11kΩ.
R1= (V
O
–V
ADJ
) / (V
ADJ
/R2)
*: Insert R3 in case of setting V
O
to V
O
≤
1.8V. The recommended
value for R3 is 10kΩ.
• A higher heat radiation effect can be achieved by enlarging the copper laminate
area connected to the inner frame to which a monolithic IC is mounted.
• Obtaining the junction temperature
Measure GND terminal temperature T
C
with a thermocouple, etc. Then substitute
this value in the following formula to obtain the junction temperature.
T
j
=P
D
×
θ
j–C+
T
C
P
D
= (V
IN–
V
O
)•I
OUT
ICs
81
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