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FM25LX64-GTR

产品描述IC FRAM 64K SPI 20MHZ 8SOIC
产品类别存储   
文件大小559KB,共14页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
标准
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FM25LX64-GTR概述

IC FRAM 64K SPI 20MHZ 8SOIC

FM25LX64-GTR规格参数

参数名称属性值
存储器类型非易失
存储器格式FRAM
技术FRAM(铁电体 RAM)
存储容量64Kb (8K x 8)
时钟频率20MHz
存储器接口SPI
电压 - 电源1.4 V ~ 1.65 V
工作温度-40°C ~ 85°C(TA)
安装类型表面贴装
封装/外壳8-SOIC(0.154",3.90mm 宽)
供应商器件封装8-SOIC

文档预览

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Preliminary
FM25LX64
64Kb Serial 1.5V F-RAM Memory
FEATURES
64K bit Ferroelectric Nonvolatile RAM
Organized as 8,192 x 8 bits
High Endurance 1 Trillion (10
12
) Read/Writes
36 Year Data Retention at +75ºC
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast SPI Interface
Up to 20 MHz Frequency
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Software Write-Protection (BP bits)
Hardware Write-Protect (/WP pin)
Active-Low RESET Input
Holds Device in Reset State While Power
Stabilizes
Reduces Time to First F-RAM Access
Allows Freedom of Power Supply Ramp Rates
Low Voltage/ Low Energy Consumption
Low Voltage Operation 1.5V +0.15V, -0.1V
20
A
(typ.) Active Current at 1 MHz
0.1
A
(typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40C to +85C
8-pin “Green”/RoHS SOIC Package
DESCRIPTION
The FM25LX64 is a 1.5V 64-kilobit nonvolatile
memory employing an advanced ferroelectric
process. A ferroelectric random access memory or F-
RAM is nonvolatile and performs reads and writes
like a RAM. It provides reliable data retention for 36
years while eliminating the complexities, overhead,
and system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM25LX64 performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after each byte has
been successfully transferred to the device. The next
bus cycle may commence immediately without the
need for data polling. In addition, the product offers
substantial write endurance compared with other
nonvolatile memories. The FM25LX64 is capable of
supporting 10
12
read/write cycles, or 1 million times
more write cycles than EEPROM.
These capabilities make the FM25LX64 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25LX64 provides substantial benefits to users
of serial EEPROM as a hardware drop-in
replacement. The FM25LX64 uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
F-RAM
technology.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
PIN CONFIGURATION
CS
SO
WP
VSS
Pin Name
/CS
SCK
SI
SO
/RST
/WP
VDD
VSS
1
2
3
4
8
7
6
5
VDD
RST
SCK
SI
Function
Chip Select
Serial Clock
Serial Data Input
Serial Data Output
Reset Input
Write Protect Input
Supply Voltage
Ground
Ordering Information
FM25LX64-G
“Green” 8-pin SOIC
FM25LX64-GTR
“Green” 8-pin SOIC,
Tape & Reel
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 1.1
Feb. 2012
Page 1 of 14
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