电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

VS-8EWF04STRL-M3

产品描述DIODE GEN PURP 400V 8A D-PAK
产品类别分立半导体    二极管   
文件大小240KB,共8页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 选型对比 全文预览

VS-8EWF04STRL-M3在线购买

供应商 器件名称 价格 最低购买 库存  
VS-8EWF04STRL-M3 - - 点击查看 点击购买

VS-8EWF04STRL-M3概述

DIODE GEN PURP 400V 8A D-PAK

VS-8EWF04STRL-M3规格参数

参数名称属性值
厂商名称Vishay(威世)
零件包装代码TO-252AA
包装说明R-PSSO-G2
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性FREEWHEELING DIODE, LOW LEAKAGE CURRENT
应用FAST SOFT RECOVERY HIGH POWER
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.2 V
JEDEC-95代码TO-252AA
JESD-30 代码R-PSSO-G2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流120 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-40 °C
最大输出电流8 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
认证状态Not Qualified
最大重复峰值反向电压400 V
最大反向恢复时间0.055 µs
表面贴装YES
端子面层Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间10
Base Number Matches1

文档预览

下载PDF文档
VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3
www.vishay.com
Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 8 A
Base
cathode
+
2
FEATURES
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
please
see
2
3
1
1
Anode -
3
- Anode
TO-252AA (D-PAK)
APPLICATIONS
• Output rectification and freewheeling diode in inverters,
choppers and converters
• Input rectifications where severe
conducted EMI should be met
restrictions
on
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
TO-252AA (D-PAK)
8A
200 V, 400 V, 600 V
1.2 V
150 A
55 ns
150 °C
Single die
0.5
DESCRIPTION
The VS-8EWF..S-M3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time,
low forward voltage drop and low leakage current.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
8 A, T
J
= 25 °C
1 A, 100 A/μs
Range
CHARACTERISTICS
Sinusoidal waveform
VALUES
8
200 to 600
150
1.2
55
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
VS-8EWF02S-M3
VS-8EWF04S-M3
VS-8EWF06S-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
200
400
600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
300
500
700
3
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 96 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
8
125
150
78
110
1100
A
2
s
A
2
s
A
UNITS
16-Jan-17
Document Number: 93375
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

VS-8EWF04STRL-M3相似产品对比

VS-8EWF04STRL-M3 VS-8EWF06STR-M3 VS-8EWF02STRL-M3 VS-8EWF02STR-M3 VS-8EWF02STRR-M3 VS-8EWF04STR-M3 VS-8EWF04STRR-M3 VS-8EWF06STRL-M3 VS-8EWF06STRR-M3
描述 DIODE GEN PURP 400V 8A D-PAK DIODE GEN PURP 200V 8A D-PAK DIODE GEN PURP 200V 8A D-PAK DIODE GEN PURP 200V 8A D-PAK DIODE GEN PURP 400V 8A D-PAK DIODE GEN PURP 400V 8A D-PAK DIODE GEN PURP 600V 8A D-PAK DIODE GEN PURP 600V 8A D-PAK
厂商名称 Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
零件包装代码 TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA
包装说明 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
针数 3 3 3 3 3 3 3 3 3
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 FREEWHEELING DIODE, LOW LEAKAGE CURRENT FREEWHEELING DIODE, LOW LEAKAGE CURRENT FREEWHEELING DIODE, LOW LEAKAGE CURRENT FREEWHEELING DIODE, LOW LEAKAGE CURRENT FREEWHEELING DIODE, LOW LEAKAGE CURRENT FREEWHEELING DIODE, LOW LEAKAGE CURRENT FREEWHEELING DIODE, LOW LEAKAGE CURRENT FREEWHEELING DIODE, LOW LEAKAGE CURRENT FREEWHEELING DIODE, LOW LEAKAGE CURRENT
应用 FAST SOFT RECOVERY HIGH POWER FAST SOFT RECOVERY HIGH POWER FAST SOFT RECOVERY HIGH POWER FAST SOFT RECOVERY HIGH POWER FAST SOFT RECOVERY HIGH POWER FAST SOFT RECOVERY HIGH POWER FAST SOFT RECOVERY HIGH POWER FAST SOFT RECOVERY HIGH POWER FAST SOFT RECOVERY HIGH POWER
外壳连接 CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE CATHODE
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
JEDEC-95代码 TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA TO-252AA
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
最大非重复峰值正向电流 120 A 120 A 120 A 120 A 120 A 120 A 120 A 120 A 120 A
元件数量 1 1 1 1 1 1 1 1 1
相数 1 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
最大输出电流 8 A 8 A 8 A 8 A 8 A 8 A 8 A 8 A 8 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260 260 260 260 NOT SPECIFIED 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 400 V 600 V 200 V 200 V 200 V 400 V 400 V 600 V 600 V
最大反向恢复时间 0.055 µs 0.055 µs 0.055 µs 0.055 µs 0.055 µs 0.055 µs 0.055 µs 0.055 µs 0.055 µs
表面贴装 YES YES YES YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 10 10 10 10 10 NOT SPECIFIED 10 10 10
JESD-609代码 e3 e3 e3 e3 e3 - e3 e3 e3
湿度敏感等级 1 1 1 1 1 - 1 1 1
端子面层 Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier - Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn) - with Nickel (Ni) barrier
Base Number Matches 1 1 1 1 1 - 1 1 1

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1133  1516  2814  1926  1062  23  19  36  55  58 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved