Case in defined as the top surface of the package.
e.
T
C
= 25 °C package limited.
f. Maximum under steady state conditions is 85 °C/W.
g.
Case is defined as top surface of the package.
S15-0932-Rev. B, 20-Apr-15
Document Number: 63716
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8416DB
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 5 V
V
DS
= 8 V, V
GS
= 0 V
V
DS
= 8 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 1.5 A
V
GS
= 2.5 V, I
D
= 1 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 1.8 V, I
D
= 1 A
V
GS
= 1.5 V, I
D
= 0.5 A
V
GS
= 1.2 V, I
D
= 0.5 A
Forward Transconductance
a
Dynamic
b
SYMBOL
TEST CONDITIONS
MIN.
8
-
-
0.35
-
-
-
5
-
-
-
-
-
-
-
TYP.
-
2.2
-2.7
-
-
-
-
-
0.019
0.021
0.023
0.027
0.040
22
1470
580
450
17
1.8
3.4
2.5
13
15
40
10
MAX.
-
-
-
0.80
± 100
1
10
-
0.023
0.025
0.030
0.040
0.095
-
-
-
-
26
-
-
-
25
30
80
20
UNIT
V
mV/°C
V
nA
μA
A
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Rg
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 4 V, I
D
= 1.5 A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V
DS
= 4 V, V
GS
= 0 V, f = 1 MHz
-
-
-
pF
V
DS
= 4 V, V
GS
= 4.5 V, I
D
= 1.5 A
V
GS
= 0.1 V, f = 1 MHz
V
DD
= 4 V, R
L
= 2.7
I
D
1.5 A, V
GEN
= 4.5 V, R
g
= 1
-
-
-
-
-
-
-
nC
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
-
-
-
-
0.7
35
18
13
22
20
20
1.2
70
35
-
-
A
V
ns
nC
ns
I
S
= 1.5 A, V
GS
= 0
-
-
-
-
-
I
F
= 1.5 A, dI/dt = 100 A/μs, T
J
= 25 °C
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0932-Rev. B, 20-Apr-15
Document Number: 63716
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8416DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 5 V thru 1.5 V
8
15
I
D
- Drain Current (A)
I
D
- Drain Current (A)
6
T
C
= 25
°C
4
10
Vishay Siliconix
10
5
2
V
GS
= 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.2
T
C
= 125
°C
T
C
= - 55
°C
0.4
0.6
0.8
1.0
1.2
V
GS
-
Gate-to-Source
Voltage (V)
1.4
1.6
Output Characteristics
Transfer Characteristics
0.10
V
GS
= 1.2 V
0.08
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
2400
2000
C
iss
1600
0.06
V
GS
= 1.5 V
V
GS
= 1.8 V
1200
C
oss
C
rss
0.04
800
0.02
V
GS
= 2.5 V
0.00
0
4
8
12
I
D
- Drain Current (A)
16
20
V
GS
= 4.5 V
400
0
0
4
6
V
DS
- Drain-to-Source Voltage (V)
2
8
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
5
R
DS(on)
- On-Resistance (Normalized)
I
D
= 1.5 A
V
GS
-
Gate-to-Source
Voltage (V)
4
V
DS
= 4 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
- 50
V
GS
= 1.2 V; I
D
= 0.5 A
V
GS
= 4.5 V, 2.5 V, 1.8 V; I
D
= 1.5 A
V
GS
= 1.5 V; I
D
= 0.5 A
3
V
DS
= 2 V
V
DS
= 6.4 V
2
1
0
0
4
8
12
16
Q
g
- Total
Gate
Charge (nC)
20
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
S15-0932-Rev. B, 20-Apr-15
On-Resistance vs. Junction Temperature
Document Number: 63716
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8416DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.10
I
D
= 1.5 A
0.08
I
S
-
Source
Current (A)
T
J
= 150
°C
10
R
DS(on)
- On-Resistance (Ω)
Vishay Siliconix
0.06
T
J
= 25
°C
1
0.04
T
J
= 125
°C
0.02
T
J
= 25
°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
-
Source-to-Drain
Voltage (V)
0.00
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
30
0.7
25
0.6
20
Power (W)
125
150
V
GS(th)
(V)
0.5
I
D
= 250 μA
0.4
15
10
0.3
5
0.2
- 50
- 25
0
25
50
75
100
T
J
- Temperature (°C)
0
0.001
0.01
0.1
1
Pulse (s)
10
100
1000
Threshold Voltage
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
100 μs
1 ms
1
10 ms
100 ms
1
s
10
s
DC
T
A
= 25
°C
Single Pulse Power, Junction-to-Ambient
0.1
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
S15-0932-Rev. B, 20-Apr-15
Document Number: 63716
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si8416DB
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
24
Vishay Siliconix
15
20
12
Power Dissipation (W)
75
100
125
150
I
D
- Drain Current (A)
16
Package Limited
12
9
6
8
4
3
0
0
25
50
T
C
- Ambient Temperature (°C)
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in
settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when
this rating falls below the package limit.
S15-0932-Rev. B, 20-Apr-15
Document Number: 63716
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
我最近在《华尔街日报》看到一篇题为“我们需要能维修自己的电子小玩意儿的权利(We need the right to repair our gadgets)”的文章(参考原文：)，作者对于众多电子产品看来是“有计画的废弃(planned obsolescence)”之现象非常愤怒，认为大众应该要求电子产品可以被维修。 但实际的情况是，举例来说，家家都有的电视机如果故障了，修理费用可能...[详细]
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