PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
DESCRIPTION
The H11AG series consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled with a silicon
phototransistor in a dual in-line package. This device
provides the unique feature of the high current transfer
ratio at both low output voltage and low input current.
This makes it ideal for use in low power logic circuits,
telecommunications equipment and portable electronics
isolation applications.
H11AG2
H11AG3
6
1
6
SCHEMATIC
FEATURES
• High efficiency low degradation liquid epitaxial IRED
• Logic level compatible, input and output currents, with
CMOS and LS/TTL
• High DC current transfer ratio at low input currents
• Underwriters Laboratory (UL) recognized File #E90700
1
ANODE 1
6 BASE
6
1
CATHODE 2
5 COL
APPLICATIONS
• CMOS driven solid state reliability
• Telephone ring detector
• Digital logic isolation
N/C 3
4 EMITTER
ABSOLUTE MAXIMUM RATINGS
Parameters
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
DETECTOR
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
Continuous Collector Current
P
D
All
All
150
2.0
50
mW
mW/°C
mA
Symbol
T
STG
T
OPR
T
SOL
P
D
I
F
V
R
I
F
(pk)
P
D
Device
All
All
All
All
All
All
All
All
Value
-55 to +150
-55 to +100
260 for 10 sec
260
3.5
50
6
3.0
75
1.0
Units
°C
°C
°C
mW
mW/°C
mA
V
A
mW
mW/°C
2001 Fairchild Semiconductor Corporation
DS300213
1/28/02
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
ELECTRICAL CHARACTERISTICS
H11AG2
(T
A
= 0-70°C Unless otherwise specified.)
H11AG3
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters
EMITTER
Input Forward Voltage
Reverse Leakage Current
Capacitance
DETECTOR
Breakdown Voltage
Collector to Emitter
Collector to Base
Emitter to Collector
Leakage Current
Collector to Emitter
Capacitance
V
CE
= 10 V, I
F
= 0
V
CE
= 10 V, f = 1 MHz
I
CEO
C
CE
All
All
5
2
10
µA
pF
I
C
= 1.0 mA, I
F
= 0
I
C
= 100
µA,
I
F
= 0
I
C
= 100
µA,
I
F
= 0
BV
CEO
BV
CBO
BV
ECO
All
All
All
30
70
7
V
V
V
I
F
= 1 mA
V
R
= 5 V, T
A
= 25°C
V
R
= 5 V, T
A
= 70°C
V = 0, f = 1.0 MHz
V
F
I
R
I
R
C
J
All
All
All
All
1.5
10
100
100
V
µA
µA
pF
Test Conditions
Symbol
Device
Min
Typ
Max
Units
ISOLATION CHARACTERISTICS
Parameters
Input-Output Isolation Voltage
Test Conditions
I
I-0
≤
1 µA, t = 1 min.
Symbol
V
ISO
Min
5300
Typ
Max
Units
Vac(rms)
TRANSFER CHARACTERISTICS
DC Characteristics
(T
A
= 25°C Unless otherwise specified.)
Symbol
CTR
Device
H11AG1
H11AG2
H11AG3
H11AG1
Min
300
200
100
100
50
20
100
50
.40
Min
Typ
5
5
Max
V
Units
µS
µS
%
Typ
Max
Units
Test Conditions
I
F
= 1 mA, V
CE
= 5 V
Current Transfer Ratio
I
F
= 1 mA, V
CE
= 0.6 V
CTR
H11AG2
H11AG3
H11AG1
H11AG2
All
Device
All
All
I
F
= 0.2 mA, V
CE
= 1.5 V
Saturation Voltage
AC Characteristics
Non-Saturated Switching Times
Turn-On Time
Turn-Off Time
I
F
= 2.0 mA, I
C
= 0.5 mA
Test Conditions
R
L
= 100
Ω,
I
F
= 1 mA, V
CC
= 5 V
R
L
= 100
Ω,
I
F
= 1 mA, V
CC
= 5 V
CTR
V
CE(SAT)
Symbol
t
on
t
off
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1/28/02
DS300213
PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
Figure 1. LED Forward Voltage vs. Forward Current
2.0
Figure 2. Normalized Current Transfer Ratio vs. Forward Current
1.2
1.8
V
F
- FORWARD VOLTAGE (V)
1.0
1.6
NORMALIZED CTR
CE
0.8
1.4
T
A
= -55 C
T
A
= 25
o
C
T
A
= 100 C
o
o
0.6
1.2
0.4
NORMALIZED TO:
I
F
= 5mA
V
CE
= 5V
o
T
A
= 25 C
1
10
100
1.0
0.2
0.8
0.1
1
10
100
0.1
I
F
- LED FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT - mA
Figure 3. Normalized CTR vs. Temperature
1.6
1.4
1.2
NORMALIZED I
CE
- COLLECTOR - EMITTER CURRENT
Figure 4. Normalized Collector vs. Collector - Emitter Voltage
10
NORMALIZED TO:
I
F
= 5mA
V = 5V
CE
NORMALIZED CTR
CE
T
A
= 25
o
C
1.0
0.8
I
F
= 1mA
0.6
I
F
= 0.5mA
0.4
0.2
0.0
-60
I
F
= 0.2mA
I
F
= 10mA
I
F
= 2mA
I
F
= 5mA
I
F
= 10mA
1
I
F
= 5mA
I
F
= 2mA
0.1
I
F
= 1mA
I
F
= 0.5mA
I
F
= 0.2mA
0.01
0.001
-40
-20
0
20
40
60
80
100
NORMALIZED TO:
I
F
= 5mA
V
CE
= 5V
T
A
= 25
o
C
T
A
- AMBIENT TEMPERATURE -
o
C
0.0001
0.1
1
V
CE
- COLLECTOR - EMITTER VOLTAGE - V
10
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1/28/02
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
Figure 5. Normalized Collector Base Photocurrent Ratio vs. Forward Current
NORMALIZED ICB - COLLECTOR BASE PHOTOCURRENT
30
10
Figure 6. Normalized Collector - Base Current vs. Temperature
NORMALIZED COLLECTOR - BASE CURRENT
25
I
F
= 10mA
1
I
F
= 5mA
I
F
= 2mA
I
F
= 1mA
0.1
I
F
= 0.5mA
20
15
10
NORMALIZED TO:
I
F
= 5mA
V
CB
= 5V
T
A
= 25
o
C
I
F
= 0.2mA
0.01
NORMALIZED TO:
I
F
= 5mA
V
CB
= 5V
o
T
A
= 25 C
-40
-20
0
20
40
60
80
100
5
0
0
10
20
30
40
50
60
70
80
90
100
I
F
- FORWARD CURRENT - mA
0.001
-60
T
A
- AMBIENT TEMPERATURE -
o
C
Figure 7. Collector-Emitter Dark Current vs. Ambient Temperature
10000
1000
I
F
= 0mA
V
CE
= 10V
I
CEO
- DARK CURRENT (nA)
100
10
1
0.1
0
10
20
30
40
50
60
70
80
90
100
T
A
- AMBIENT TEMPERATURE (
o
C)
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1/28/02
DS300213
PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
47Ω
≤
25A
LOAD
75KΩ
1.5MΩ
+5V
15K
H11AG1
2N4256
150pF
CMOS
CONTROL
≥
0.16mA
22K
47Ω
SC160B
120V
60Hz
SUPPLY
V130LA20A
C203D
DT230H
(4)
0.1
Figure 8. CMOS Input, 3KW, Zero Voltage Switching Solid State Relay
The H11AG1’s superior performance at low input currents allows standard CMOS logic circuits to directly operate a 25A solid state relay.
Circuit operation is as follows: power switching is provided by the SC160B, 25A triac. Its gate is controlled by the C203B via the DT230H
rectifier bridge. The C203B turn-on is inhibited by the 2N4256 when line voltage is above 12V and/or the H11AG is off. False trigger and
dv/dt protection are provided by the combination of the MOV
varistor and RC snubber network.
3V
≤
V
CC
≤
10V
47KΩ
R
1
H11AG1
AC
INPUT
VOLTAGE
1N148
C
1
4093 or
74HC14
INPUT
R1
40-90 VRMS
75 K
20 Hz
1/10 W
95-135 VRMS 180 K
60 Hz
1/10 W
200-280 VRMS 390 K
50/60 Hz
1/4 W
C1
0.1
µF
100 V
12
ηF
200 V
6.80
ηF
400 V
Z
109K
285K
550K
4.7MΩ
C
2
0.1
4.7KΩ
DC component of input voltage is ignored due to C1
Figure 9. Telephone Ring Detector/A.C. Line CMOS Input Isolator
The H11AG1 uses less input power than the neon bulb traditionally used to monitor telephone and line voltages. Additionally. response
time can be tailored to ignore telephone dial tap, switching transients and other undesired signals by modifying the value of C2. The high
impedance to line voltage also can simply board layout spacing requirements.
DS300213
1/28/02
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