CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers
October 2005
CNY171, CNY172, CNY173, CNY174, CNY17F1, CNY17F2,
CNY17F3, CNY17F4, MOC8101, MOC8102, MOC8103,
MOC8104, MOC8105, MOC8106, MOC8107, MOC8108
Phototransistor Optocouplers
Features
■
CNY171/2/3/4 and CNY17F1/2/3/4 are also available in
white package by specifying M suffix (eg. CNY17F2M)
■
UL recognized (File # E90700)
■
VDE recognized
– Add option V for white package (e.g., CNY17F2VM)
– File #102497
– Add option ‘300’ for black package (e.g., CNY17F2300)
– File #94766
■
Current transfer ratio in select groups
■
High BV
CEO
—70V minimum (CNY17X/M, CNY17FX/M,
MOC8106/7/8)
■
Closely matched current transfer ratio (CTR) minimizes unit-
to-unit variation.
■
Very low coupled capacitance along with no chip to pin 6
base connection for minimum noise susceptability
(CNY17FX/M, MOC810X)
Applications
■
Power supply regulators
■
Digital logic inputs
■
Microprocessor inputs
■
Appliance sensor systems
■
Industrial controls
Description
The CNY17, CNY17F and MOC810X devices consist of a
Gallium Arsenide IRED coupled with an NPN phototransistor
in a dual in-line package.
White Package (-M Suffix)
Black Package (No -M Suffix)
6
6
1
1
6
1
6
1
6
6
1
1
Schematic
ANODE 1
6 NC
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
CATHODE 2
5 COLLECTOR
NC 3
4 EMITTER
NC 3
4 EMITTER
CNY17F1/2/3/4
CNY17F1M/2M/3M/4M
MOC8101/2/3/4/5/6/7/8
CNY171/2/3/4
CNY17F1M/2M/3M/4M
©2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
CNY17X, CNY17FX, MOC810X Rev. 1.0.5
CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers
Absolute Maximum Ratings
Parameters
TOTAL DEVICE
Storage Temperature
T
STG
T
OPR
T
SOL
P
D
M
non M
Operating Temperature
M
non M
Lead Solder Temperature
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
All
M
non M
M
non M
EMITTER
Continuous Forward Current
I
F
V
R
I
F
(pk)
P
D
M
non M
Reverse Voltage
Forward Current - Peak (1 µs pulse, 300 pps)
All
M
non M
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
M
non M
M
non M
DETECTOR
Continuous Collector Current
Collector-Emitter Voltage
I
C
V
CEO
All
CNY17X/M, CNY17FX/M,
MOC8106/7/8
MOC8101/2/3/4/5
Emitter Collector Voltage
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
V
ECO
P
D
All
M
non M
M
non M
50
70
30
7
150
150
1.76
2.0
mW/°C
mA
V
V
V
mW
60
100
6
1.5
1.0
120
150
1.41
1.8
mW/°C
mW
V
A
mA
-40 to +150
-55 to +150
-40 to +100
-55 to +100
260 for 10 sec
250
250
2.94
3.30
mW/°C
°C
mW
°C
°C
Symbol
Device
Value
Units
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
(1)
Individual Component Characteristics
Parameters
EMITTER
Input Forward Voltage
I
F
= 60 mA
I
F
= 10 mA
Capacitance
V
F
= 0 V, f = 1.0 MHz
C
J
I
R
Reverse Leakage Current V
R
= 6 V
V
F
CNY17FX/M
CNY17X/M
MOC810X
All
All
1.0
1.0
1.35
1.15
18
0.001
10
1.65
1.50
pF
µA
V
Test Conditions
Symbol
Device
Min
Typ
Max
Units
2
www.fairchildsemi.com
CNY17X, CNY17FX, MOC810X Rev. 1.0.5
CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers
Individual Component Characteristics (Continued)
Parameters
DETECTOR
Breakdown Voltage
Collector to Emitter
MOC8101/2/3/4/5
I
C
= 1.0 mA, I
F
= 0
BV
CEO
MOC8106/7/8
CNY17F1/2/3/4/M
CNY171/2/3/4/M
CNY171/2/3/4/M
All
All
CNY171/2/3/4/M
All
CNY171/2/3/4/M
CNY171/2/3/4/M
8
20
10
30
70
100
100
V
Test Conditions
Symbol
Device
Min
Typ
Max
Units
Collector to Base
Emitter to Collector
Leakage Current
Collector to Emitter
Collector to Base
Capacitance
Collector to Emitter
Collector to Base
Emitter to Base
I
C
= 10 µA, I
F
= 0
I
E
= 100 µA, I
F
= 0
V
CE
= 10 V, I
F
= 0
V
CB
= 10 V, I
F
= 0
V
CE
= 0, f = 1 MHz
V
CB
= 0, f = 1 MHz
V
EB
= 0, f = 1 MHz
BV
CBO
BV
ECO
I
CEO
I
CBO
C
CE
C
CB
C
EB
70
7
120
10
1
50
20
nA
nA
pF
pF
pF
Isolation Characteristics
Characteristic
Input-Output Isolation Voltage
Test Conditions
f = 60 Hz, t = 1 min. (4)
f = 60 Hz, t = 1 sec. (4)
Symbol
V
ISO
R
ISO
C
ISO
Device
Black Package
‘M’ White Package
All
Black Package
‘M’ White Package
Min
5300
7500
10
11
Typ** Max
Units
Vac(rms)*
Vac(pk)
Ω
Isolation Resistance
Isolation Capacitance
V
I-O
= 500 VDC (4)
V
I-O
= Ø, f = 1 MHz (4)
0.5
0.2
pF
Note
* 5300 Vac(rms) for 1 minute equates to approximately 9000 Vac (pk) for 1 second
** Typical values at T
A
= 25°C
3
www.fairchildsemi.com
CNY17X, CNY17FX, MOC810X Rev. 1.0.5
CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
(1)
DC Characteristics
Coupled
Output Collector
Current
MOC8101
MOC8102
MOC8103
MOC8104
MOC8105
MOC8106
MOC8107
MOC8108
CNY17F1/1M
CNY17F2/2M
CNY17F3/3M
CNY17F4/4M
CNY171/1M
CNY172/2M
CNY173/3M
CNY174/4M
Collector-Emitter
Saturation Voltage
CNY17XM/FXM
MOC8101/2/3/4/5/
6/7/8
CNY17X/FX
(I
C
= 2.5 mA, I
F
= 10 mA)
(I
C
= 500 µA, I
F
= 5.0 mA)
(I
F
= 10 mA, I
C
= 2.5 mA)
—
—
0.3
V
V
CE(sat)
(I
F
= 10 mA, V
CE
= 5 V)
(I
F
= 10 mA, V
CE
= 10 V)
(CTR)
(2)
50
73
108
160
65
50
100
250
40
63
100
160
40
63
100
160
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
80
117
173
256
133
150
300
600
80
125
200
320
80
125
200
320
0.4
V
%
Test Conditions Symbol Min
Typ
Max
Units
AC Characteristics
(3)
Non-Saturated Switching Time
Turn-On Time
MOC8101/2/3/4/5
MOC8106/7/8
CNY17X/FX
Turn-Off Time
MOC8101/2/3/4/5
MOC8106/7/8
CNY17X/FX
Delay Time
Rise Time
CNY17XM/FXM
All Devices
CNY17XM/FXM
Storage Time
Fall Time
CNY17XM/FXM
All Devices
CNY17XM/FXM
Test Conditions Symbol Min
(I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
)
t
on
—
Typ* Max
2
20
—
10
Units
µs
(I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
)
t
off
—
3
20
—
10
(I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
)
(I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
)
(I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
)
(I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
)
(I
C
= 2.0 mA, V
CC
= 10 V, R
L
= 100
Ω
)
(I
F
= 10 mA, V
CC
= 5 V, R
L
= 75
Ω
)
t
d
t
r
—
—
—
—
1
—
—
2
—
5.6
—
4.0
4.1
—
3.5
µs
µs
t
s
t
f
—
—
—
µs
µs
4
www.fairchildsemi.com
CNY17X, CNY17FX, MOC810X Rev. 1.0.5
CNY17X, CNY17FX, MOC810X Phototransistor Optocouplers
Transfer Characteristics (continued)
(T
A
= 25°C Unless otherwise specified.)
(1)
AC Characteristics
(3)
Saturated Switching Times
Turn-on Time
CNY171/F1
CNY172/F2
CNY173/F3
CNY174/F4
Rise Time
CNY171/F1
CNY172/F1
CNY173/F3
CNY174/F4
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
Delay Time
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
Turn-off Time
CNY171/F1
CNY172/F2
CNY173/F3
CNY174/F4
Fall Time
CNY171/F1
CNY172/F2
CNY173/F3
CNY174/F4
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
Storage Time
CNY171M/F1M
CNY172M/3M/4M
CNY17F2M/F3M/F4M
** All typicals at T
A
= 25°C
Notes:
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
3. For test circuit setup and waveforms, refer to Figures 20.
4, For this test, Pins 1 and 2 are common, and Pins 4 are 5 are common.
(I
F
= 20 mA, V
CE
= 0.4 V)
(I
F
= 10 mA, V
CE
= 0.4 V)
t
on
—
—
—
—
5.5
8.0
µs
Test Conditions Symbol
Min
Typ
Max Units
(I
F
= 20 mA, V
CE
= 0.4 V)
(I
F
= 10 mA, V
CE
= 0.4 V)
t
r
—
—
—
—
4.0
6.0
µs
(I
F
= 20 mA, V
CC
= 5 V, R
L
= 1 KΩ)
(I
F
= 10 mA, V
CC
= 5 V, R
L
= 1 KΩ)
(I
F
= 20 mA, V
CC
= 5 V, R
L
=1 KΩ)
(I
F
= 10 mA, V
CC
= 5 V, R
L
=1 KΩ)
(I
F
= 20 mA, V
CE
= 0.4 V)
(I
F
= 10 mA, V
CE
= 0.4 V)
t
d
t
off
—
—
—
—
—
—
—
—
—
—
—
—
4.0
6.0
5.5
8.0
34
39
µs
µs
(I
F
= 20 mA, V
CE
= 0.4 V)
(I
F
= 10 mA, V
CE
= 0.4 V)
t
f
—
—
—
—
20
24
µs
(I
F
= 20 mA, V
CC
= 5V, R
L
= 1KΩ)
(I
F
= 10 mA, V
CC
= 5V, R
L
= 1KΩ)
(I
F
= 20 mA, V
CC
= 5V, R
L
= 1KΩ)
(I
F
= 10 mA, V
CC
= 5V, R
L
= 1KΩ)
t
s
—
—
—
—
—
—
—
—
20.0
24.0
34.0
39.0
µs
µs
5
www.fairchildsemi.com
CNY17X, CNY17FX, MOC810X Rev. 1.0.5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
