SGP30N60
SGW30N60
Fast IGBT in NPT-technology
•
75% lower
E
off
compared to previous generation
combined with low conduction losses
•
Short circuit withstand time – 10
µs
•
Designed for:
- Motor controls
- Inverter
•
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
1
C
G
E
PG-TO-220-3-1
PG-TO-247-3
•
Qualified according to JEDEC for target applications
•
Pb-free lead plating; RoHS compliant
•
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
SGP30N60
SGW30N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
600V,
T
j
≤
150°C
Gate-emitter voltage
Avalanche energy, single pulse
I
C
= 30 A,
V
CC
= 50 V,
R
GE
= 25
Ω,
start at
T
j
= 25°C
Short circuit withstand time
2
V
GE
= 15V,
V
CC
≤
600V,
T
j
≤
150°C
Power dissipation
T
C
= 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
T
j
,
T
stg
T
s
-55...+150
260
°C
P
tot
250
W
t
SC
10
µs
V
GE
E
AS
±20
165
V
mJ
I
Cpuls
-
Symbol
V
CE
I
C
41
30
112
112
Value
600
Unit
V
A
V
CE
600V
600V
I
C
30A
30A
V
CE(sat)
2.5V
2.5V
T
j
150°C
150°C
Marking
G30N60
G30N60
Package
PG-TO-220-3-1
PG-TO-247-3
1
2
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.5
Nov. 09
SGP30N60
SGW30N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJA
PG-TO-220-3-1
PG-TO-247-3-21
62
40
R
thJC
0.5
K/W
Symbol
Conditions
Max. Value
Unit
Electrical Characteristic,
at
T
j
= 25
°C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V,
I
C
= 50 0µA
V
CE(sat)
V
G E
= 15V,
I
C
= 30A
T
j
= 25° C
T
j
= 15 0° C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 70 0µA,
V
C E
=V
G E
V
C E
= 600V ,V
G E
= 0V
T
j
= 25° C
T
j
= 15 0° C
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
Symbol
Conditions
Value
min.
600
1.7
-
3
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
2.1
2.5
4
-
-
-
20
1600
150
92
140
7
13
300
-
max.
-
2.4
3.0
5
Unit
V
µA
40
3000
100
-
1920
180
110
182
-
nC
nH
A
nA
S
pF
I
GES
g
fs
C
iss
C
oss
C
rss
Q
Gate
L
E
I
C(SC)
V
C E
= 0V ,V
G E
= 2 0V
V
C E
= 20V,
I
C
= 30A
V
C E
= 25V,
V
G E
= 0V,
f=
1 M Hz
V
C C
= 4 80V,
I
C
= 30A
V
G E
= 1 5V
PG-TO-220-3-1
PG-TO-247-3-21
V
G E
= 1 5V,t
S C
≤10µs
V
C C
≤
600V,
T
j
≤
150° C
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.5
Nov. 09
SGP30N60
SGW30N60
Switching Characteristic, Inductive Load,
at
T
j
=25
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 25° C,
V
C C
= 4 00V,
I
C
= 30A,
V
G E
= 0/ 1 5V ,
R
G
= 11Ω ,
L
σ
1 )
= 18 0n H ,
C
σ
1 )
= 90 0p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
44
34
291
58
0.64
0.65
1.29
53
40
349
70
0.77
0.85
1.62
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
Switching Characteristic, Inductive Load,
at
T
j
=150
°C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
= 15 0° C
V
C C
= 4 00V,
I
C
= 30A,
V
G E
= 0/ 1 5V ,
R
G
= 11Ω,
L
σ
1 )
= 18 0n H ,
C
σ
1 )
= 90 0p F
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
44
34
324
67
0.98
0.92
1.90
53
40
389
80
1.18
1.19
2.38
mJ
ns
Symbol
Conditions
Value
min.
typ.
max.
Unit
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
3
Rev. 2.5
Nov. 09
SGP30N60
SGW30N60
160A
140A
120A
I
c
100A
t
p
=4
µ
s
15
µ
s
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
100A
80A
T
C
=80°C
60A
40A
20A
0A
10Hz
T
C
=110°C
10A
50
µ
s
200
µ
s
1ms
1A
DC
I
c
0.1A
1V
10V
100V
100Hz
1kHz
10kHz
100kHz
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
≤
150°C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 11Ω)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25°C,
T
j
≤
150°C)
300W
60A
250W
50A
Limited by bond wire
200W
I
C
,
COLLECTOR CURRENT
50°C
75°C
100°C
125°C
POWER DISSIPATION
40A
150W
30A
100W
20A
P
tot
,
50W
10A
0W
25°C
0A
25°C
50°C
75°C
100°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T
j
≤
150°C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
≤
15V,
T
j
≤
150°C)
4
Rev. 2.5
Nov. 09
SGP30N60
SGW30N60
90A
80A
70A
90A
80A
70A
I
C
,
COLLECTOR CURRENT
60A
50A
40A
30A
20A
10A
0A
0V
I
C
,
COLLECTOR CURRENT
V
GE
=20V
15V
13V
11V
9V
7V
5V
60A
50A
40A
30A
20A
10A
0A
0V
V
GE
=20V
15V
13V
11V
9V
7V
5V
1V
2V
3V
4V
5V
1V
2V
3V
4V
5V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T
j
= 150°C)
90A
80A
T
j
=+25°C
-55°C
+150°C
V
CE(sat)
,
COLLECTOR
-
EMITTER SATURATION VOLTAGE
100A
4.0V
3.5V
I
C
= 60A
I
C
,
COLLECTOR CURRENT
70A
60A
50A
40A
30A
20A
10A
0A
0V
2V
4V
6V
3.0V
2.5V
I
C
= 30A
2.0V
1.5V
8V
10V
1.0V
-50°C
0°C
50°C
100°C
150°C
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V
CE
= 10V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V
GE
= 15V)
5
Rev. 2.5
Nov. 09
TI技术论坛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
