电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SIT3807AI-D3-33EE-12.288000T

产品描述OSC MEMS 12.2880MHZ LVCMOS SMD
产品类别无源元件   
文件大小637KB,共16页
制造商SiTime
标准
下载文档 详细参数 全文预览

SIT3807AI-D3-33EE-12.288000T概述

OSC MEMS 12.2880MHZ LVCMOS SMD

SIT3807AI-D3-33EE-12.288000T规格参数

参数名称属性值
类型MEMS VCXO
频率12.288MHz
功能启用/禁用
输出LVCMOS
电压 - 电源3.3V
频率稳定度±50ppm
工作温度-40°C ~ 85°C
电流 - 电源(最大值)33mA
安装类型表面贴装
封装/外壳6-SMD,无引线
大小/尺寸0.276" 长 x 0.197" 宽(7.00mm x 5.00mm)
高度 - 安装(最大值)0.039"(1.00mm)
电流 - 电源(禁用)(最大值)70µA

文档预览

下载PDF文档
SiT3807
Standard Frequency MEMS VCXO
The Smart Timing Choice
The Smart Timing Choice
Features
Applications
30 standard frequencies between 1.544 MHz and 49.152 MHz
100% pin-to-pin drop-in replacement to quartz-based VCXO
Frequency stability as tight as ±25 ppm
Widest pull range options from ±25 ppm to ±200 ppm
Industrial or extended commercial temperature range
Superior pull range linearity of ≤1%, 10 times better than quartz
LVCMOS/LVTTL compatible output
Four industry-standard packages: 2.5 mm x2.0 mm (4-pin),
3.2 mm x 2.5mm (4-pin), 5.0 mm x 3.2 mm (6-pin), 7.0 mm x 5.0 mm
(6-pin)
Instant samples with
Time Machine II
and
field programmable
oscillators
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
Telecom clock synchronization, instrumentation
Low bandwidth analog PLL, jitter cleaner, clock recovery, audio
Video, 3G/HD-SDI, FPGA, broadband and networking
Electrical Specifications
Parameter
Output Frequency Range
Frequency Stability
Aging
Operating Temperature Range
Table 1. Electrical Characteristics
[1, 2, 3]
Symbol
f
F_stab
F_aging
T_use
Min.
1.544
-25
-50
-5
-20
-40
Supply Voltage
Vdd
1.71
2.25
2.52
2.97
Current Consumption
Standby Current
Idd
I_std
Pull
Range
[5, 6]
PR
VC_U
Typ.
1.8
2.5
2.8
3.3
31
29
Max.
49.152
+25
+50
+5
+70
+85
1.89
2.75
3.08
3.63
33
31
70
10
Unit
MHz
ppm
ppm
ppm
°C
°C
V
V
V
V
mA
mA
A
A
ppm
V
V
V
V
V
kΩ
pF
%
55
2
kHz
%
ns
Vdd
Contact SiTime for 16 kHz and other high bandwidth options
All Vdds. Refer to
Note 11
for definition of Duty Cycle
Vdd = 1.8V, 2.5v, 2.8V or 3.3V, 10% - 90% Vdd level
IOH = -7 mA (Vdd = 3.0V or 3.3V)
IOH = -4 mA (Vdd = 2.8V or 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 7 mA (Vdd = 3.0V or 3.3V)
IOL = 4 mA (Vdd = 2.8V or 2.5V)
IOL = 2 mA (Vdd = 1.8V)
(408) 328-4400
www.sitime.com
Revised January 8, 2015
No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V
No load condition, f = 20 MHz, Vdd = 1.8V
Vdd = 2.5V, 2.8V, 3.3V, ST = GND, output is Weakly Pulled Down
Vdd = 1.8V, ST = GND, output is Weakly Pulled Down
See the Absolute Pull Range and APR table on
page 10
Vdd = 1.8V, Voltage at which maximum deviation is guaranteed.
Vdd = 2.5V, Voltage at which maximum deviation is guaranteed.
Vdd = 2.8V, Voltage at which maximum deviation is guaranteed.
Vdd = 3.3V, Voltage at which maximum deviation is guaranteed.
Voltage at which minimum deviation is guaranteed.
Additional supply voltages between 2.5V and 3.3V can be
supported. Contact
SiTime
for additional information.
Condition
Refer to
Table 11
for the exact list of supported frequencies
Inclusive of Initial tolerance
[4]
at 25 °C, and variation over
temperature, rated supply voltage and load.
10 years, 25°C
Extended Commercial
Industrial
Frequency Range
Frequency Stability and Aging
Supply Voltage and Current Consumption
VCXO Characteristics
±25, ±50, ±100, ±150, ±200
1.7
2.4
2.7
3.2
Lower Control Voltage
Control Voltage Input Impedance
Control Voltage Input Capacitance
Linearity
Frequency Change Polarity
Control Voltage Bandwidth (-3dB)
Duty Cycle
Rise/Fall Time
Output High Voltage
VC_L
Z_in
C_in
Lin
V_BW
DC
Tr, Tf
VOH
45
90%
100
5
0.1
Positive slope
8
1.5
0.1
1
Upper Control Voltage
LVCMOS Output Characteristics
Output Low Voltage
VOL
10%
Vdd
SiTime Corporation
Rev. 1.01
990 Almanor Avenue, Sunnyvale, CA 94085
申请实验板套件
以前从来没有用过430,因为接触的都是功耗不敏感的项目,最近做了一个手持设备,功耗这块搞惨了,所以想试试传说中的430,看是不是真正的有那么神奇。...
tgnui 微控制器 MCU
问卷调查:打造你心中理想的下载中心!(已颁奖)
颁奖链接:>>下载中心问卷调查颁奖! :victory: ---------------------------------------------------------- EE下载中心上线已经有一段时间了,相信坛子里大多数朋友都体会到了TA的 ......
soso 下载中心专版
NTC热敏电阻的误差校正
一般买的便宜热敏电阻,根据B值计算肯定和实际有误差,那么除了非线性校正外的误差一般通过什么方法校正?特别对于批量生产是怎么考虑的?...
wangfuchong 传感器
自制多级倍压器升压线圈发热严重
师傅们请帮忙分析一下原因:我仿制了一国外生产的一个十二级倍压整流的倍压器,磁心还是用老外那个拆下的,初级匝数线径都一样,次级匝数也一样只是线径老外的是0.09mm,我用的是0.1mm.线圈烘烤 ......
xiaoheij 综合技术交流
并转串问题
想找一个并转串芯片,8位并行输入,但是数据不立即读出,等凑够一定位数(》=48位)之后在读出, ...
ena 单片机
使用 LED 矩阵显示器的漂亮厨房定时器
Martin Jonasson 制作了一个相当漂亮和独特的厨房计时器。 Hackaday 介绍文章 github 代码 ...
dcexpert DIY/开源硬件专区

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 79  1916  1430  1294  2565  21  19  27  45  42 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved