MIC5501/2/3/4
300 mA Single Output LDO in Small Packages
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Input Voltage Range: 2.5V to 5.5V
Fixed Output Voltages from 1.0V to 3.3V
300 mA Guaranteed Output Current
High Output Accuracy (±2%)
Low Quiescent Current: 38 µA
Stable with 1 µF Ceramic Output Capacitors
Low Dropout Voltage: 160 mV @ 300 mA
Output Discharge Circuit: MIC5502, MIC5504
Internal Enable Pull-Down: MIC5503, MIC5504
Thermal-Shutdown and Current-Limit Protection
4-Lead 1.0 mm x 1.0 mm Thin DFN Package
MIC5501/4 5-Lead SOT23 Package
Smartphones
DSC, GPS, PMP, and PDAs
Medical Devices
Portable Electronics
5V Systems
General Description
The MIC5501/2/3/4 is an advanced general-purpose
LDO ideal for powering general-purpose portable
devices. The MIC5501/2/3/4 family of products
provides a high-performance 300 mA LDO in an
ultra-small 1 mm x 1 mm package. The MIC5502 and
MIC5504 LDOs include an auto-discharge feature on
the output that is activated when the enable pin is low.
The MIC5503 and MIC5504 have an internal pull-down
resistor on the enable pin that disables the output when
the enable pin is left floating. This is ideal for
applications where the control signal is floating during
processor boot up.
Ideal
for
battery-powered
applications,
the
MIC5501/2/3/4 offers 2% initial accuracy, low dropout
voltage (160 mV at 300 mA), and low ground current
(typically 38 µA). The MIC5501/2/3/4 can also be put
into a zero-off-mode current state, drawing virtually no
current when disabled.
The MIC5501/2/3/4 has an operating
temperature range of –40°C to +125°C.
junction
Applications
Package Types
MIC5501/2/3/4
4-Lead DFN (MT)
(Top View)
VIN
4
EN
3
MIC5501/4
SOT23-5 (M5)
(Top View)
EN GND VIN
1
2
3
EP
1
VOUT
2
GND
4
NC
5
VOUT
2018 Microchip Technology Inc.
DS20006006A-page 1
MIC5501/2/3/4
Typical Application Circuit
MIC5501/2/3/4
MIC550X-xYMT
VIN
1μF
EN
GND
VOUT
1μF
VBAT
DS20006006A-page 2
2018 Microchip Technology Inc.
MIC5501/2/3/4
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage (V
IN
) .................................................................................................................................... –0.3V to +6V
Enable Voltage (V
EN
) .....................................................................................................................................–0.3V to V
IN
Power Dissipation (P
D
) ............................................................................................................. Internally Limited,
Note 1
ESD Rating (Note
2)
.................................................................................................................................................. 3 kV
Operating Ratings ‡
Supply Voltage (V
IN
) ................................................................................................................................. +2.5V to +5.5V
Enable Voltage (V
EN
) ..........................................................................................................................................0V to V
IN
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
‡ Notice:
The device is not guaranteed to function outside its operating ratings.
Note 1:
The maximum allowable power dissipation of any T
A
(ambient temperature) is P
D(max)
= (T
J(max)
– T
A
)/θ
JA
.
Exceeding the maximum allowable power dissipation will result in excessive die temperature, and the reg-
ulator will go into thermal shutdown.
2:
Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series
with 100 pF.
TABLE 1-1:
ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
V
IN
= V
EN
= V
OUT
+ 1V; C
IN
= C
OUT
= 1 µF; I
OUT
= 100 µA; T
J
= +25°C,
bold
values
indicate –40°C to +125°C, unless noted.
Parameter
Output Voltage Accuracy
Line Regulation
Load Regulation (Note
1)
Dropout Voltage (Note
2)
Ground Pin Current (Note
3)
Ground Pin Current in
Shutdown
Ripple Rejection
Current Limit
Output Voltage Noise
Auto-Discharge NFET
Resistance
Enable Input
Enable Pull-Down Resistor
Enable Input Voltage
—
V
EN
—
—
1.2
4
—
—
—
0.2
—
MΩ
V
For MIC5503 and MIC5504 use
only
Logic-Low
Logic-High
Symbol
V
OUT
—
—
V
DO
I
GND
I
GND(SHDN)
Min.
–2.0
–3.0
—
—
—
—
—
—
—
—
400
—
—
Typ.
—
—
0.02
8
80
160
38
42
0.05
60
630
175
25
Max.
2.0
3.0
0.3
40
190
380
55
65
1
—
900
—
—
Units
%
%/V
mV
mV
µA
µA
dB
mA
µV
RMS
Ω
Conditions
Variation from nominal V
OUT
Variation from nominal V
OUT
;
–40°C to +125°C
V
IN
= V
OUT
+1V to 5.5V; I
OUT
=
100 µA
I
OUT
= 100 µA to 300 mA
I
OUT
= 150 mA
I
OUT
= 300 mA
I
OUT
= 0 mA
I
OUT
= 300 mA
V
EN
= 0V
f = 1 kHz; C
OUT
= 1 µF
V
OUT
= 0V
C
OUT
= 1 µF, 10 Hz to 100 kHz
MIC5502, MIC5504 Only;
V
EN
= 0V; V
IN
= 3.6V; I
OUT
= –3 mA
PSRR
I
LIM
e
n
—
2018 Microchip Technology Inc.
DS20006006A-page 3
MIC5501/2/3/4
TABLE 1-1:
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
V
IN
= V
EN
= V
OUT
+ 1V; C
IN
= C
OUT
= 1 µF; I
OUT
= 100 µA; T
J
= +25°C,
bold
values
indicate –40°C to +125°C, unless noted.
Parameter
Enable Input Current
MIC5501, MIC5502
Enable Input Current
MIC5503, MIC5504
Turn-On Time
Note 1:
2:
Symbol
I
EN
I
EN
t
ON
Min.
—
—
—
—
—
Typ.
0.01
0.01
0.01
1.4
50
Max.
1
1
1
2
125
Units
µA
µA
µs
Conditions
V
EN
= 0V
V
EN
= 5.5V
V
EN
= 0V
V
EN
= 5.5V
C
OUT
= 1 µF; I
OUT
= 150 mA
3:
Regulation is measured at constant junction temperature using low duty cycle pulse testing. Changes in
output voltage due to heating effects are covered by the thermal regulation specification.
Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its
nominal value measured at 1V differential. For outputs below 2.5V, dropout voltage is the input-to-output
differential with the minimum input voltage 2.5V.
Ground pin current is the regulator quiescent current. The total current drawn from the source is the sum
of the load current plus the ground pin current.
DS20006006A-page 4
2018 Microchip Technology Inc.
MIC5501/2/3/4
TEMPERATURE SPECIFICATIONS (Note
1)
Parameters
Temperature Ranges
Storage Temperature Range
Maximum Junction Temperature Range
Operating Junction Temperature Range
Lead Temperature
Package Thermal Resistances
Thermal Resistance 1 mm x 1 mm Thin DFN-4
Thermal Resistance SOT23-5
Note 1:
JA
JA
—
—
250
253
—
—
°C/W
°C/W
—
—
T
S
T
J
T
J
—
–65
–40
–40
—
—
—
—
—
+150
+150
+125
+260
°C
°C
°C
°C
—
—
—
Soldering, 10s
Sym.
Min.
Typ.
Max.
Units
Conditions
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +125°C rating. Sustained junction temperatures above +125°C can impact the device reliability.
2018 Microchip Technology Inc.
DS20006006A-page 5
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
