74HCT14D
CMOS Digital Integrated Circuits Silicon Monolithic
74HCT14D
1. Functional Description
•
Hex Schmitt Inverter
2. General
The 74HCT14D is a high speed CMOS SCHMITT INVERTER fabricated with silicon gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power
dissipation.
This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. The inputs are
compatible with TTL, NMOS and CMOS output voltage levels.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
3. Features
(1)
(2)
(3)
(4)
High speed: t
pd
= 17 ns (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 1.0
µA
(max) at T
a
= 25
Wide interfacing ability: LSTTL, NMOS, CMOS
Balanced propagation delays: t
PLH
≈
t
PHL
4. Packaging
SOIC14
Start of commercial production
©2016 Toshiba Corporation
1
2016-05
2016-05-24
Rev.2.0
74HCT14D
5. Pin Assignment
6. Marking
7. IEC Logic Symbol
©2016 Toshiba Corporation
2
2016-05-24
Rev.2.0
74HCT14D
8. Truth Table
A
L
H
Y
H
L
9. System Diagram, Waveform
10. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
(Note 1)
Note
Rating
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±20
±20
±25
±50
500
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: P
D
derates linearly with -8 mW/ above 85
11. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Symbol
V
CC
V
IN
V
OUT
T
opr
Rating
4.5 to 5.5
0 to V
CC
0 to V
CC
-40 to 125
Unit
V
V
V
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
©2016 Toshiba Corporation
3
2016-05-24
Rev.2.0
74HCT14D
12. Electrical Characteristics
12.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Positive threshold voltage
Negative threshold voltage
Hysteresis voltage
High-level output voltage
Low-level output voltage
Input leakage current
Quiescent supply current
Symbol
V
P
V
N
V
H
V
OH
V
OL
I
IN
I
CC
I
CCT
Test Condition
V
CC
(V)
4.5
5.5
4.5
5.5
4.5
5.5
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 0.5 V or 2.4 V
Other input: V
CC
or GND
I
OH
= -20
µA
I
OH
= -4 mA
I
OL
= 20
µA
I
OL
= 4 mA
5.5
5.5
5.5
4.5
4.5
Min
1.2
1.4
0.5
0.6
0.4
0.4
4.4
3.98
Typ.
1.41
1.59
0.85
0.99
0.56
0.6
4.5
4.32
0.0
0.15
30
Max
1.9
2.1
1.2
1.4
0.1
0.26
±0.1
1.0
108
µA
µA
µA
V
V
V
V
Unit
V
12.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
Positive threshold voltage
Negative threshold voltage
Hysteresis voltage
High-level output voltage
Low-level output voltage
Input leakage current
Quiescent supply current
Symbol
V
P
V
N
V
H
V
OH
V
OL
I
IN
I
CC
I
CCT
Test Condition
V
CC
(V)
4.5
5.5
4.5
5.5
4.5
5.5
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 0.5 V or 2.4 V
Other input: V
CC
or GND
I
OH
= -20
µA
I
OH
= -4 mA
I
OL
= 20
µA
I
OL
= 4 mA
5.5
5.5
5.5
4.5
4.5
Min
1.2
1.4
0.5
0.6
0.4
0.4
4.4
3.84
Max
1.9
2.1
1.2
1.4
0.1
0.33
±1.0
10.0
135
µA
µA
µA
V
V
V
V
Unit
V
©2016 Toshiba Corporation
4
2016-05-24
Rev.2.0
74HCT14D
12.3. DC Characteristics (Unless otherwise specified, T
a
= -40 to 125
)
Characteristics
Positive threshold voltage
Negative threshold voltage
Hysteresis voltage
High-level output voltage
Low-level output voltage
Input leakage current
Quiescent supply current
Symbol
V
P
V
N
V
H
V
OH
V
OL
I
IN
I
CC
I
CCT
Test Condition
V
CC
(V)
4.5
5.5
4.5
5.5
4.5
5.5
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
V
IN
= V
CC
or GND
V
IN
= V
CC
or GND
Per input: V
IN
= 0.5 V or 2.4 V
Other input: V
CC
or GND
I
OH
= -20
µA
I
OH
= -4 mA
I
OL
= 20
µA
I
OL
= 4 mA
5.5
5.5
5.5
4.5
4.5
Min
1.2
1.4
0.5
0.6
0.4
0.4
4.4
3.7
Max
1.9
2.1
1.2
1.4
0.1
0.4
±1.0
40.0
147
µA
µA
µA
V
V
V
V
Unit
V
©2016 Toshiba Corporation
5
2016-05-24
Rev.2.0
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