RN1301~RN1306
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1301, RN1302, RN1303
RN1304, RN1305, RN1306
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2301 to RN2306
Equivalent Circuit and Bias Resistor Values
Type No.
RN1301
RN1302
RN1303
RN1304
RN1305
RN1306
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
USM
JEDEC
JEITA
TOSHIBA
Weight: 6 mg (typ.)
―
SC-70
2-2E1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1301 to 1306
RN1301 to 1306
RN1301 to 1304
RN1305, 1306
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
50
50
10
5
100
100
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1987-09
1
2014-03-01
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