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RN1903,LF(CT

产品描述TRANS 2NPN PREBIAS 0.2W US6
产品类别分立半导体    晶体管   
文件大小461KB,共7页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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RN1903,LF(CT概述

TRANS 2NPN PREBIAS 0.2W US6

RN1903,LF(CT规格参数

参数名称属性值
是否无铅不含铅
包装说明SMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknown
Factory Lead Time12 weeks
其他特性BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压50 V
配置SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)70
JESD-30 代码R-PDSO-G6
元件数量2
端子数量6
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型NPN
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)250 MHz
Base Number Matches1

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RN1901~RN1906
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1901, RN1902, RN1903
RN1904, RN1905, RN1906
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2901 to RN2906
Equivalent Circuit and Bias Resistor Values
Type No.
RN1901
RN1902
RN1903
RN1904
RN1905
RN1906
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
US6
JEDEC
JEITA
TOSHIBA
2-2J1A
Weight: 6.8mg(typ.)
Equivalent Circuit
(Top View)
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1901 to 1906
RN1901 to 1906
RN1901 to 1904
RN1905, 1906
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Rating
50
50
10
5
100
200
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Total rating
Start of commercial production
1990-12
1
2014-03-01

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