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RN2111,LF(CB

产品描述TRANS PREBIAS PNP 50V 0.1W SSM
产品类别半导体    分立半导体   
文件大小263KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
下载文档 详细参数 选型对比 全文预览

RN2111,LF(CB概述

TRANS PREBIAS PNP 50V 0.1W SSM

RN2111,LF(CB规格参数

参数名称属性值
晶体管类型PNP - 预偏压
电流 - 集电极(Ic)(最大值)100mA
电压 - 集射极击穿(最大值)50V
电阻器 - 基底(R1)10 kOhms
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值)120 @ 1mA,5V
不同 Ib,Ic 时的 Vce 饱和值(最大值)300mV @ 250µA,5mA
电流 - 集电极截止(最大值)100nA(ICBO)
频率 - 跃迁200MHz
功率 - 最大值100mW
安装类型表面贴装
封装/外壳SC-75,SOT-416
供应商器件封装SSM

文档预览

下载PDF文档
RN2110,RN2111
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2110, RN2111
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Built-in bias resistors
Simplified circuit design
Fewer parts and simplified manufacturing process
Complementary to RN1110, RN1111
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−50
−50
−5
−100
100
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2−2H1A
Weight: 2.4 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN2110
RN2111
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
Test Condition
V
CB
=
−50
V, I
E
= 0
V
EB
=
−5
V, I
C
= 0
V
CE
=
−5
V, I
C
=
−1
mA
I
C
=
−5
mA, I
B
=
−0.25
mA
V
CE
=
−10
V, I
C
=
−5
mA
V
CB
=
−10
V, I
E
= 0, f = 1 MH
z
Min
120
3.29
7
Typ.
−0.1
200
3
4.7
10
Max
−100
−100
400
−0.3
6
6.11
13
Unit
nA
nA
V
MH
z
pF
kΩ
Start of commercial production
1990-12
1
2014-03-01

RN2111,LF(CB相似产品对比

RN2111,LF(CB RN2110MFV(TPL3) RN2110(T5L,F,T) RN2111(T5L,F,T) RN2110,LF(CB
描述 TRANS PREBIAS PNP 50V 0.1W SSM trans prebias pnp 150mw vesm tran pnp ssm -50v -100a tran pnp ssm -50v -100a TRANS PREBIAS PNP 50V 0.1W SSM

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