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CTS521,L3F

产品描述DIODE SCHOTTKY 30V 200MA CST2
产品类别半导体    分立半导体   
文件大小135KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
标准
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CTS521,L3F概述

DIODE SCHOTTKY 30V 200MA CST2

CTS521,L3F规格参数

参数名称属性值
二极管类型肖特基
电压 - DC 反向(Vr)(最大值)30V
电流 - 平均整流(Io)200mA
不同 If 时的电压 - 正向(Vf500mV @ 200mA
速度快速恢复 =< 500 ns,> 200mA(Io)
不同 Vr 时的电流 - 反向漏电流30µA @ 30V
不同 Vr,F 时的电容25pF @ 0V,1MHz
安装类型表面贴装
封装/外壳SOD-882
供应商器件封装CST2
工作温度 - 结125°C(最大)

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CTS521
Schottky Barrier Diode
Silicon Epitaxial
CTS521
1. Applications
High-Speed Switching
2. Features
(1)
(2)
Low forward voltage : V
F(3)
= 0.5 V (max)
Thin and compact package : Thickness = 0.40 mm (max)
3. Packaging and Internal Circuit
1: Cathode
2: Anode
CST2
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
25
Characteristics
Reverse voltage
Peak forward current
Average rectified current
Non-repetitive peak forward surge current
Power dissipation
Junction temperature
Storage temperature
Operating temperature
Symbol
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
T
opr
(Note 1)
(Note 2)
Note
Rating
30
300
200
1
150
125
-55 to 125
-40 to 100
A
mW
Unit
V
mA
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Measured with a 10 ms pulse.
Note 2: Mounted on a glass-epoxy circuit board of 20 mm
×
20 mm, Pad dimension of 4 mm
×
4 mm.
Note:
Start of commercial production
1
2012-02
2014-04-04
Rev.3.0

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