VS-MBRB15..CT-M3, VS-MBR15..CT-1-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 7.5 A
FEATURES
• 150 °C T
J
operation
• Center tap TO-220 package
2
1
3
1
2
3
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D
2
PAK (TO-263AB)
Base
common
cathode
2
TO-262AA
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
DESCRIPTION
The VS-MBR(B)15... center tap Schottky rectifier has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
VS-MBRB15..CT-M3
VS-MBR15..CT-1-M3
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
E
AS
Package
Circuit configuration
2 x 7.5 A
35 V, 45 V
0.57 V
15 mA at 125 °C
150 °C
7 mJ
D
2
PAK (TO-263AB), TO-262AA
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
7.5 A
pk
, T
J
= 125 °C
CHARACTERISTICS
Rectangular waveform
VALUES
15
35/45
690
0.57
-65 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRB1535CT-M3
VS-MBR1535CT-1-M3
35
VS-MBRB1545CT-M3
VS-MBR1545CT-1-M3
45
UNITS
V
Revision: 03-Nov-17
Document Number: 96403
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB15..CT-M3, VS-MBR15..CT-1-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
Maximum peak one cycle
non-repetitive surge
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
per leg
per device
SYMBOL
I
F(AV)
TEST CONDITIONS
T
C
= 131 °C, rated V
R
5 μs sine or 3 μs
rect. pulse
Following any rated load condition
and with rated V
RRM
applied
VALUES
7.5
15
690
150
7
2
mJ
A
A
UNITS
I
FSM
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
T
J
= 25 °C, I
AS
= 2 A, L = 3.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
E
AS
I
AR
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
SYMBOL
15 A
V
FM
(1)
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
Rated DC voltage
7.5 A
15 A
T
J
= 25 °C
T
J
= 125 °C
VALUES
0.84
0.57
0.72
0.1
15
400
8.0
10 000
UNITS
V
Maximum instantaneous reverse current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
mA
pF
nH
V/μs
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured from top of terminal to mounting plane
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Maximum thermal resistance,
junction to ambient
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style D
2
PAK (TO-263AB)
Case style TO-262AA
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
R
thJA
DC operation
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-65 to +150
-65 to +175
3.0
0.50
60
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
MBRB1545CT
MBR1545CT-1
Revision: 03-Nov-17
Document Number: 96403
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB15..CT-M3, VS-MBR15..CT-1-M3
www.vishay.com
Vishay Semiconductors
100
100
I
R
- Reverse Current (mA)
10
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
I
F
- Instantaneous
Forward Current (A)
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0.01
0.001
0.0001
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1.8 2.0
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
1000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
t
1
t
2
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 03-Nov-17
Document Number: 96403
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB15..CT-M3, VS-MBR15..CT-1-M3
www.vishay.com
150
Vishay Semiconductors
7
Allowable Case Temperature (°C)
Average Power Loss (W)
6
5
4
3
2
1
0
140
DC
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
RMS limit
130
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
120
0
2
4
6
8
10
12
0
2
4
6
8
10
12
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 03-Nov-17
Document Number: 96403
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB15..CT-M3, VS-MBR15..CT-1-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS- MBR
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
2
B
3
15
4
45
5
CT
6
-1
7
L
8
-M3
9
Vishay Semiconductors product
Essential part number
B = D
2
PAK (TO-263AB)
None = TO-262AA
Current rating (15 = 15 A)
Voltage ratings
CT = essential part number
None = D
2
PAK
-1 = TO-262AA
None = tube
L = tape and reel (left oriented - for D
2
PAK (TO-263AB) only)
R = tape and reel (right oriented - for D
2
PAK (TO-263AB) only)
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
3
3
=B
None
35 = 35 V
45 = 45 V
7
7
None
= -1
9
-
ORDERING INFORMATION
PREFERRED P/N
VS-MBRB1535CT-M3
VS-MBRB1535CTR-M3
VS-MBRB1535CTL-M3
VS-MBR1535CT-1-M3
VS-MBRB1545CT-M3
VS-MBRB1545CTR-M3
VS-MBRB1545CTL-M3
VS-MBR1545CT-1-M3
QUANTITY PER T/R
50
800
800
50
50
800
800
50
MINIMUM ORDER QUANTITY
1000
800
800
1000
1000
800
800
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Dimensions
Part marking information
Part marking information
Packaging information
SPICE model
D
2
PAK (TO-263AB)
TO-262AA
D
2
PAK (TO-263AB)
TO-262AA
www.vishay.com/doc?96164
www.vishay.com/doc?96165
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?96424
www.vishay.com/doc?95294
Revision: 03-Nov-17
Document Number: 96403
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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