VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 6 A
FEATURES
• 175 °C T
J
operation
• Center tap configuration
• Low forward voltage drop
2
1
3
1
2
3
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
TO-262AA
Base
common
cathode
2
D
2
PAK (TO-263AB)
Base
common
cathode
2
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
VS-12CTQ...S-M3
VS-12CTQ...-1-M3
DESCRIPTION
The VS-12CTQ... center tap Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
E
AS
Package
Circuit configuration
2x6A
35 V, 40 V, 45 V
0.53 V
7.0 mA at 125 °C
175 °C
8 mJ
D
2
PAK (TO-263AB), TO-262AA
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Range
t
p
= 5 μs sine
6 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
12
35 to 45
690
0.53
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-12CTQ035S-M3
VS-12CTQ035-1-M3
35
VS-12CTQ040S-M3
VS-12CTQ040-1-M3
40
VS-12CTQ045S-M3
VS-12CTQ045-1-M3
45
UNITS
V
Revision: 27-Oct-17
Document Number: 94924
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward
current, see fig. 5
per leg
per device
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 160 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
E
AS
I
AR
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated V
RRM
applied
VALUES
6
12
690
140
8
1.20
A
mJ
A
UNITS
A
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
T
J
= 25 °C, I
AS
= 1.20 A, L = 11.10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop per leg
See fig. 1
Maximum reverse leakage current per leg
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
SYMBOL
6A
V
FM (1)
12 A
6A
12 A
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.60
0.73
0.53
0.64
0.8
7.0
0.35
18.23
400
8.0
10 000
mA
V
m
pF
nH
V/μs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum
maximum
Case style D
2
PAK (TO-263AB)
Marking device
Case style TO-262AA
SYMBOL
T
J
, T
Stg
DC operation
See fig. 4
DC operation
R
thCS
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
-55 to 175
3.50
1.75
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
R
thJC
12CTQ035S
12CTQ040S
12CTQ045S
12CTQ035-1
12CTQ040-1
12CTQ045-1
Revision: 27-Oct-17
Document Number: 94924
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series
www.vishay.com
100
Vishay Semiconductors
100
T
J
= 175 °C
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (mA)
10
1
0.1
T
J
= 75 °C
0.01
T
J
= 50 °C
0.001
T
J
= 25 °C
0.0001
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
1000
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.1
P
DM
t
1
t
2
0.01
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
10
.
100
0.001
0.00001
0.0001
0.001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 27-Oct-17
Document Number: 94924
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series
www.vishay.com
175
5.0
4.5
170
Vishay Semiconductors
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
Allowable Case Temperature (°C)
Average Power Loss (W)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
165
DC
160
Square wave (D = 0.50)
80 % rated V
R
applied
155
See note (1)
150
0
2
4
6
8
10
DC
0
2
4
6
8
10
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
(1)
Revision: 27-Oct-17
Document Number: 94924
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
12
2
C
3
T
4
Q
5
045
6
S
7
TRL -M3
8
9
Vishay
Semiconductors
product
Current rating (12 A)
Circuit configuration: C = common cathode
T = TO-220
Schottky
“Q”
series
Voltage ratings
S
= D
2
PAK (TO-263AB)
-1 = TO-262AA
None = tube
TRL = tape and reel (left oriented - for D
2
PAK (TO-263AB) only)
TRR = tape and reel (right oriented - for D
2
PAK (TO-263AB) only)
035 = 35 V
040 = 40 V
045 = 45 V
9
-
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
VS-12CTQ035S-M3
VS-12CTQ035STRR-M3
VS-12CTQ035STRL-M3
VS-12CTQ035-1-M3
VS-12CTQ040S-M3
VS-12CTQ040STRR-M3
VS-12CTQ040STRL-M3
VS-12CTQ040-1-M3
VS-12CTQ045S-M3
VS-12CTQ045STRR-M3
VS-12CTQ045STRL-M3
VS-12CTQ045-1-M3
QUANTITY PER T/R
50
800
800
50
50
800
800
50
50
800
800
50
MINIMUM ORDER QUANTITY
1000
800
800
1000
1000
800
800
1000
1000
800
800
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
D
2
PAK
D
2
PAK
(TO-263AB)
TO-262AA
(TO-263AB)
TO-262AA
www.vishay.com/doc?96164
www.vishay.com/doc?96165
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?96424
Revision: 27-Oct-17
Document Number: 94924
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
