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1N5524B (DO35)

产品描述DIODE ZENER 5.6V 500MW DO35
产品类别半导体    分立半导体   
文件大小185KB,共5页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 全文预览

1N5524B (DO35)概述

DIODE ZENER 5.6V 500MW DO35

1N5524B (DO35)规格参数

参数名称属性值
电压 - 齐纳(标称值)(Vz)5.6V
容差±5%
功率 - 最大值500mW
阻抗(最大值)(Zzt)30 Ohms
不同 Vr 时的电流 - 反向漏电流2µA @ 3.5V
不同 If 时的电压 - 正向(Vf1.1V @ 200mA
工作温度-65°C ~ 175°C
安装类型通孔
封装/外壳DO-204AH,DO-35,轴向
供应商器件封装DO-35

文档预览

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1N5518B thru 1N5546B-1
Low Voltage Avalanche
500 mW Zener Diodes DO-35
Qualified per MIL-PRF-19500/437
DESCRIPTION
The 1N5518 thru 1N5546 series of 0.5 watt axial-leaded glass Zener Voltage Regulators
provides a selection from 3.3 to 33 volts with tolerances ranging from plus/minus 1% to 20%.
The standard tolerance is plus/minus 5% with the B suffix unless ordered otherwise. These
axial-leaded glass DO-35 Zeners are also available with an internal metallurgical bond option.
This type of bonded Zener package construction is also available in JAN, JANTX, and
JANTXV military qualifications. Microsemi also offers numerous other Zener products to meet
higher and lower power applications.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX and
JANTXV
FEATURES
JEDEC registered 1N5518 thru 1N5546.
Voltage tolerances of plus/minus 20%, 10%, 5%, 2%, and 1% available. See
Note 1
on page 3.
Internal metallurgical bond option available with “-1” suffix.
JAN, JANTX, and JANTXV qualification per MIL-PRF-19500/437 available (requires metallurgical
bond option as well as plus/minus 5% voltage tolerance or tighter with B-1, C-1 or D-1 suffix).
RoHS compliant versions available (commercial grade only).
DO-35 (DO-204AH)
Package
Also available in:
DO-213AA MELF
(surface mount)
1N5518BUR-1 thru
1N5546BUR-1
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current and temperature range.
Guaranteed voltage regulation (∆V
Z
) from I
ZL
to I
ZT
.
Voltage selection from 3.3 to 33 V.
Flexible axial-lead mounting terminals.
Nonsensitive to ESD per MIL-STD-750 Method 1020.
Minimal capacitance (see
Figure 3).
Inherently radiation hard as described in Microsemi “MicroNote
050”
which is available at
Microsemi.com.
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
(Note 1)
Steady-State Power
(Also see derating in
Figure 2)
Symbol
T
J
and T
STG
P
D
(Note 2)
Value
-65 to +175
0.5
250
300
1.1
260
Unit
o
C
W
Thermal Resistance Junction-to-Lead
(Note 3)
Thermal Resistance Junction-to-Ambient
Forward Voltage @ 200 mA
Solder Pad Temperature @ 10 s
R
ӨJL
R
ӨJA
V
F
T
SP
o
o
C/W
C/W
V
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes:
1. At T
L
< 50
o
C 3/8 inch (10 mm) from body or 0.48 W at T
A
< 25
º
C when mounted on FR4 PC board as
described for thermal resistance above.
2. At 3/8 (10 mm) lead length from body.
3. When mounted on FR4 PC board (1 oz Cu) with 4 mm
2
copper pads and track width 1 mm, length 25 mm.
T4-LDS-0037-1, Rev 1 (111456)
©2011 Microsemi Corporation
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