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PZ28F064M29EWTX

产品描述IC FLASH 64M PARALLEL 48BGA
产品类别存储   
文件大小1MB,共87页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准
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PZ28F064M29EWTX概述

IC FLASH 64M PARALLEL 48BGA

PZ28F064M29EWTX规格参数

参数名称属性值
存储器类型非易失
存储器格式闪存
技术FLASH - NOR
存储容量64Mb (8M x 8,4M x 16)
写周期时间 - 字,页60ns
访问时间60ns
存储器接口并联
电压 - 电源2.7 V ~ 3.6 V
工作温度-40°C ~ 85°C(TA)
安装类型表面贴装
封装/外壳48-VFBGA
供应商器件封装48-BGA(6x8)

文档预览

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32Mb, 64Mb, 128Mb: 3V Embedded Parallel NOR Flash
Features
Parallel NOR Flash Embedded Memory
JR28F032M29EWXX; PZ28F032M29EWXX; JS28F064M29EWXX
PC28F064M29EWXX; JR28F064M29EWXX; PZ28F064M29EWXX
JS28F128M29EWXX; PC28F128M29EWXX; RC28F128M29EWXX
Features
• Supply voltage
– V
CC
= 2.7–3.6V (program, erase, read)
– V
CCQ
= 1.65–3.6V (I/O buffers)
• Asynchronous random or page read
– Page size: 8 words or 16 bytes
– Page access: 25ns
– Random access (V
CCQ
= 2.7–3.6V): 60ns (BGA);
70ns (TSOP)
• Buffer program: 256-word MAX program buffer
• Program time
– 0.56µs per byte (1.8 MB/s TYP when using 256-
word buffer size in buffer program without V
PPH
)
– 0.31µs per byte (3.2 MB/s TYP when using 256-
word buffer size in buffer program with V
PPH
)
• Memory organization
– 32Mb: 64 main blocks, 64KB each, or eight 8KB
boot blocks (top or bottom) and 63 main blocks,
64KB each
– 64Mb: 128 main blocks, 64KB each, or eight 8KB
boot blocks (top or bottom) and 127 main blocks,
64 KB each
– 128Mb: 128 main blocks, 128KB each
• Program/erase controller
– Embedded byte/word program algorithms
• Program/erase suspend and resume capability
– READ operation on another block during a PRO-
GRAM SUSPEND operation
– READ or PROGRAM operation on one block dur-
ing an ERASE SUSPEND operation on another
block
• BLANK CHECK operation to verify an erased block
• Unlock bypass, block erase, chip erase, and write to
buffer capability
– Fast buffered/batch programming
– Fast block and chip erase
• V
PP
/WP# pin protection
– V
PPH
voltage on V
PP
to accelerate programming
performance
– Protects highest/lowest block (H/L uniform) or
top/bottom two blocks (T/B boot)
• Software protection
– Volatile protection
– Nonvolatile protection
– Password protection
– Password access
• Extended memory block
– 128-word (256-byte) block for permanent secure
identification
– Program or lock implemented at the factory or by
the customer
• Low-power consumption: Standby mode
• JESD47H-compliant
– 100,000 minimum ERASE cycles per block
– Data retention: 20 years (TYP)
• 65nm single-bit cell process technology
• Packages (JEDEC-standard)
– 56-pin TSOP (128Mb, 64Mb)
– 48-pin TSOP (64Mb, 32Mb)
– 64-ball FBGA (128Mb, 64Mb)
– 48-ball BGA (64Mb, 32Mb)
• Green packages available
– RoHS-compliant
– Halogen-free
• Operating temperature
– Ambient: –40°C to +85°C
PDF: 09005aef84dc44a7
m29ew_32Mb-128Mb.pdf - Rev. B 11/12 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.

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