Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 不符合 |
| Objectid | 1401535246 |
| 零件包装代码 | TO-254AA |
| 包装说明 | FLANGE MOUNT, S-CSFM-P3 |
| 针数 | 3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | HIGH RELIABILITY |
| 雪崩能效等级（Eas） | 500 mJ |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (ID) | 18 A |
| 最大漏源导通电阻 | 0.22 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-254AA |
| JESD-30 代码 | S-CSFM-P3 |
| JESD-609代码 | e4 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | SQUARE |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 72 A |
| 认证状态 | Qualified |
| 参考标准 | MIL-19500/595 |
| 表面贴装 | NO |
| 端子面层 | GOLD OVER NICKEL |
| 端子形式 | PIN/PEG |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| JANTXV2N7236 | 2N7236U | 2N7236_10 | JAN2N7236 | JAN2N7236U | JANTX2N7236 | JANTX2N7236U | JANTXV2N7236U | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, SMD-1, U-PKG-3 | P-CHANNEL MOSFET | Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, SMD-1, U-PKG-3 | Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 | Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, SMD-1, U-PKG-3 | Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, SMD-1, U-PKG-3 |
| 是否无铅 | 不含铅 | - | - | 含铅 | 含铅 | 不含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | - | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Objectid | 1401535246 | 1784060829 | - | 1401534595 | 1401534598 | 1401534940 | 1401534943 | 1401535249 |
| 零件包装代码 | TO-254AA | TO-267AB | - | TO-254AA | TO-267AB | TO-254AA | TO-267AB | TO-267AB |
| 包装说明 | FLANGE MOUNT, S-CSFM-P3 | SMD-1, U-PKG-3 | - | FLANGE MOUNT, S-CSFM-P3 | SMD-1, U-PKG-3 | CERAMIC PACKAGE-3 | SMD-1, U-PKG-3 | SMD-1, U-PKG-3 |
| 针数 | 3 | 3 | - | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | - | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 500 mJ | - | - | 500 mJ | 500 mJ | 500 mJ | 500 mJ | 500 mJ |
| 外壳连接 | ISOLATED | DRAIN | - | ISOLATED | DRAIN | ISOLATED | DRAIN | DRAIN |
| 配置 | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 100 V | 100 V | - | 100 V | 100 V | 100 V | 100 V | 100 V |
| 最大漏极电流 (ID) | 18 A | 18 A | - | 18 A | 18 A | 18 A | 18 A | 18 A |
| 最大漏源导通电阻 | 0.22 Ω | 0.22 Ω | - | 0.22 Ω | 0.22 Ω | 0.22 Ω | 0.22 Ω | 0.22 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-254AA | TO-267AB | - | TO-254AA | TO-267AB | TO-254AA | TO-267AB | TO-267AB |
| JESD-30 代码 | S-CSFM-P3 | R-PDSO-N3 | - | S-CSFM-P3 | R-PDSO-N3 | S-CSFM-P3 | R-PDSO-N3 | R-PDSO-N3 |
| JESD-609代码 | e4 | - | - | e0 | e0 | e4 | e0 | e0 |
| 元件数量 | 1 | 1 | - | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | - | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | - | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | SQUARE | RECTANGULAR | - | SQUARE | RECTANGULAR | SQUARE | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | SMALL OUTLINE | - | FLANGE MOUNT | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | - | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 72 A | - | - | 72 A | 72 A | 72 A | 72 A | 72 A |
| 认证状态 | Qualified | Not Qualified | - | Qualified | Qualified | Qualified | Qualified | Qualified |
| 参考标准 | MIL-19500/595 | - | - | MIL-19500/595 | MIL-19500/595 | MIL-19500/595 | MIL-19500/595 | MIL-19500/595 |
| 表面贴装 | NO | YES | - | NO | YES | NO | YES | YES |
| 端子面层 | GOLD OVER NICKEL | - | - | TIN LEAD | TIN LEAD | GOLD OVER NICKEL | TIN LEAD | TIN LEAD |
| 端子形式 | PIN/PEG | NO LEAD | - | PIN/PEG | NO LEAD | PIN/PEG | NO LEAD | NO LEAD |
| 端子位置 | SINGLE | DUAL | - | SINGLE | DUAL | SINGLE | DUAL | DUAL |
| 晶体管应用 | SWITCHING | - | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON |
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