Philips Semiconductors
Product specification
Damper-Modulator
fast, high-voltage
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling
performance
• Isolated mounting tab
BYM357X
SYMBOL
damper
modulator
QUICK REFERENCE DATA
DAMPER
V
R
=1500 V
V
F
≤
1.3 V
I
F(peak)
=7 A
MODULATOR
V
R
=600 V
V
F
≤
1.03 V
I
F(peak)
= 7 A
I
FSM
≤
70 A
t
rr
≤
60 ns
1
3
2
I
FSM
≤
60 A
t
rr
≤
300 ns
GENERAL DESCRIPTION
Combined damper and modulator
diodes in an isolated plastic
envelope for horizontal deflection in
colour TV and PC monitors.
The BYM357X contains diodes
with performance characteristics
designed specifically for
applications from 16kHz to 70kHz
The BYM357X series is supplied in
the conventional leaded SOT186A
package.
PINNING
PIN
1
2
3
DESCRIPTION
damper cathode
common anode/cathode
modulator anode.
SOT186A
case
1 2 3
LIMITING VALUES
T
j
= 25 ˚C unless otherwise stated
DAMPER
SYMBOL
V
RSM
V
RRM
V
RWM
I
F(peak)
I
F(RMS)
I
FSM
PARAMETER
Peak non-repetitive reverse
voltage.
Peak repetitive reverse voltage
Crest working reverse voltage
Peak forward current
RMS forward current
Peak non-repetitive forward
current
31-70 kHz monitor.
sinusoidal;a=1.57
t = 10 ms
t = 8.3 ms
sinusoidal;with
reapplied
V
RWM(MAX)
CONDITIONS
MIN
-
-
-
-
-
-
-
MAX
1500
1500
1300
7
15.7
60
66
MODULATOR
MIN
-
-
-
-
-
-
-
MAX
600
600
600
7
14.1
70
77
UNIT
V
V
V
A
A
A
A
T
stg
T
J
Storage temperature
Operating junction temperature
-40
-
150
150
-40
-
150
150
˚C
˚C
February 2000
1
Rev 1.100
Philips Semiconductors
Product specification
Damper-Modulator
fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
-
BYM357X
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
DAMPER
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink
compound
in free air.
TYP.
-
55
MAX.
4.8
-
MODULATOR
TYP.
-
55
MAX.
5.5
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS OF DAMPER
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
PARAMETER
Forward voltage
Reverse current
CONDITIONS
I
F
= 6.5 A
I
F
= 6.5 A; T
j
= 125˚C
V
R
= V
RWM
V
R
= V
RWM
T
j
= 100 ˚C
TYP
1.1
1.05
10
50
MAX.
1.45
1.3
250
500
UNIT
V
V
µA
µA
STATIC CHARACTERISTICS OF MODULATOR
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
PARAMETER
Forward voltage
Reverse current.
CONDITIONS
I
F
= 8 A
I
F
= 8 A; T
j
= 125˚C
I
F
= 20 A
V
R
= V
RWM
V
R
= V
RWM
T
j
= 100 ˚C
TYP
1.05
0.9
1.3
10
100
MAX.
1.25
1.03
1.45
50
350
UNIT
V
V
V
µA
µA
February 2000
2
Rev 1.100
Philips Semiconductors
Product specification
Damper-Modulator
fast, high-voltage
ELECTRICAL CHARACTERISTICS OF DAMPER
T
j
= 25 ˚C unless otherwise stated
SYMBOL
t
rr
Q
s
V
fr
PARAMETER
Reverse recovery time
Reverse recovery charge
Peak forward recovery voltage
CONDITIONS
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 50 A/µs
2 A,30 V,20 A/µs
I
F
= 6.5 A;
dI
F
/dt = 50 A/µs
TYP.
200
1.2
27
BYM357X
MAX.
300
2.0
-
UNIT
ns
µC
V
ELECTRICAL CHARACTERISTICS OF MODULATOR
T
j
= 25 ˚C unless otherwise stated
SYMBOL
t
rr
I
rrm
Q
s
V
fr
PARAMETER
Reverse recovery time
Peak reverse recovery current
Reverse recovery charge
Peak forward recovery voltage
CONDITIONS
I
F
= 1 A; V
R
≥
30 V;
-dI
F
/dt = 100 A/µs
I
F
= 10 A to V
R
≥
30 V;
dI
F
/dt = 50 A/µs; T
j
= 100˚C
2 A,30 V,20 A/µs
I
F
= 10 A;
dI
F
/dt = 10 A/µs
TYP.
35
3.0
40
3.2
MAX.
60
5.5
70
-
UNIT
ns
A
nC
V
February 2000
3
Rev 1.100
Philips Semiconductors
Product specification
Damper-Modulator
fast, high-voltage
BYM357X
I
dI
F
dt
I
F
F
t
rr
time
time
VF
Q
I
I
s
10%
100%
V
VF
time
fr
R
rrm
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Modulator
Fig.4. Definition of V
fr
I
dI
F
dt
F
1000
Qs / nC
10A
trr
time
2A
100
10A
IF=2A
10
Qs
I
I
25%
100%
25 C
150 C
R
rrm
1
1
-diF / dt
10
100
Fig.2. Definition of t
rr
, Q
s
and I
rrm
Damper
Fig.5. Modulator maximum Q
s
at T
j
= 25˚C and 150˚C
10
Irrm / A
IF=10A
100
Cd / pF
1
IF=1A
10
0.1
Tj = 25 C
Tj = 100 C
0.01
1
10
-dIF/dt (A/us)
100
1
1
10
VR / V
100
1000
Fig.3. Modulator maximum I
rrm
at T
j
= 100˚C
Fig.6. Modulator typical junction capacitance C
d
at
f = 1 MHz
;
T
j
= 25˚C
February 2000
4
Rev 1.100
Philips Semiconductors
Product specification
Damper-Modulator
fast, high-voltage
BYM357X
10
Transient thermal impedance, Zth j-hs (K/W)
10
Transient thermal impedance, Zth j-hs (K/W)
1
1
0.1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.01
P
D
t
p
D=
t
p
T
t
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV29F
10s
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BY359F
10s
Fig.7. Modulator transient thermal impedance
Z
th
= f(t
p
)
Fig.10. Damper transient thermal impedance
Z
th
= f(t
p
)
30
IF / A
Tj=150 C
Tj=25 C
BYW29
30
IF / A
Tj=150C
Tj=25C
BY359
20
20
typ
10
max
10
typ
max
0
0
0.5
1
VF / V
1.5
2
0
0
1.0
VF / V
2.0
Fig.8. Modulator typical and maximum forward
characteristic; I
F
= f(V
F
); parameter T
j
Fig.11. Damper forward characteristic I
F
= f(V
F
);
parameter T
j
1000
trr / ns
10A
100
1A
Tj = 25 C
Tj = 150 C
10
10
-diF/dt
100
Fig.9. Modulator maximum t
rr
measured to 25% of I
rrm
;
T
j
= 25˚C and 150˚C
February 2000
5
Rev 1.100
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