Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
BY329 series
SYMBOL
QUICK REFERENCE DATA
V
R
= 800 V/ 1000 V/ 1200 V
I
F(AV)
= 8 A
I
FSM
≤
75 A
t
rr
≤
135 ns
k
1
a
2
GENERAL DESCRIPTION
Glass-passivated double diffused
rectifier diodes featuring low
forward voltage drop, fast reverse
recovery and soft recovery
characteristic. The devices are
intended for use in TV receivers,
monitors and switched mode power
supplies.
The BY329 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RSM
V
RRM
V
RWM
I
F(AV)
PARAMETER
Peak non-repetitive reverse
voltage
Peak repetitive reverse voltage
Crest working reverse voltage
Average forward current
1
square wave;
δ
= 0.5;
T
mb
≤
122 ˚C
sinusoidal; a = 1.57;
T
mb
≤
125 ˚C
CONDITIONS
BY329
-
-
-
-
-
-
-
-
-
MIN.
-800
800
800
600
MAX.
-1000 -1200
1000 1200
1000
800
8
7
11
16
75
82
1200
1000
UNIT
V
V
V
A
A
A
A
A
A
I
F(RMS)
I
FRM
I
FSM
I
2
t
T
stg
T
j
RMS forward current
Repetitive peak forward current t = 25
µs; δ
= 0.5;
T
mb
≤
122 ˚C
Non-repetitive peak forward
t = 10 ms
current.
t = 8.3 ms
sinusoidal; T
j
= 150 ˚C prior
to surge; with reapplied
V
RWM(max)
I
2
t for fusing
t = 10 ms
Storage temperature
Operating junction temperature
-
-40
-
28
150
150
A
2
s
˚C
˚C
1
Neglecting switching and reverse current losses.
September 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
in free air.
-
BY329 series
TYP.
-
60
MAX.
2.0
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
PARAMETER
Forward voltage
Reverse current
CONDITIONS
I
F
= 20 A
V
R
= V
RWM
; T
j
= 125 ˚C
MIN.
-
-
TYP.
1.5
0.1
MAX.
1.85
1.0
UNIT
V
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
t
rr
Q
s
dI
R
/dt
PARAMETER
Reverse recovery time
Reverse recovery charge
Maximum slope of the reverse
recovery current
CONDITIONS
I
F
= 1 A; V
R
> 30 V; -dI
F
/dt = 50 A/µs
I
F
= 2 A; V
R
> 30 V; -dI
F
/dt = 20 A/µs
I
F
= 2 A; -dI
F
/dt = 20 A/µs
MIN.
-
-
-
TYP.
100
0.5
50
MAX.
135
0.7
60
UNIT
ns
µC
A/µs
September 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329 series
I
dI
F
dt
F
100
90
80
IFS (RMS) / A
BY329
trr
time
70
60
50
40
IFSM
Qs
25%
100%
30
20
10
I
R
I
rrm
0
1ms
10ms
0.1s
tp / s
1s
10s
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.4. Maximum non-repetitive rms forward current.
I
F
= f(t
p
); sinusoidal current waveform; T
j
= 150˚C prior
to surge with reapplied V
RWM
.
IF / A
Tj = 150 C
Tj = 25 C
BY229F
20
PF / W
Vo = 1.25 V
Rs = 0.03 Ohms
BY329
Tmb(max) / C
110
D = 1.0
120
30
15
0.5
0.2
0.1
I
t
p
20
10
130
t
p
T
t
5
T
D=
10
140
typ
max
0
0
2
4
6
IF(AV) / A
8
10
150
12
0
0
0.5
1
VF / V
1.5
2
Fig.2. Maximum forward dissipation, P
F
= f(I
F(AV)
);
square wave current waveform; parameter D = duty
cycle = t
p
/T.
BY329
Tmb(max) / C
a = 1.57
1.9
10
4
5
140
2.2
2.8
130
Fig.5. Typical and maximum forward characteristic;
I
F
= f(V
F
); parameter T
j
15
PF / W
Vo = 1.25 V
Rs = 0.03 Ohms
120
10
Qs / uC
Tj = 150 C
Tj = 25 C
BY329
IF = 10 A
10 A
2A
1
1A
2A
1A
0
0
2
4
IF(AV) / A
6
150
8
0.1
1
10
-dIF/dt (A/us)
100
Fig.3. Maximum forward dissipation, P
F
= f(I
F(AV)
);
sinusoidal current waveform; parameter a = form
factor = I
F(RMS)
/I
F(AV)
.
Fig.6. Maximum Q
s
at T
j
= 25˚C and 150˚C
September 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY329 series
1000
trr / ns
BY329
IF = 10 A
10A
1A
1A
10
Transient thermal impedance, Zth j-mb (K/W)
1
100
0.1
0.01
P
D
t
p
D=
Tj = 150 C
Tj = 25 C
10
1
10
-dIF/dt (A/us)
100
0.001
1us
T
t
p
T
t
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BY229
10s
Fig.7. Maximum t
rr
measured to 25% of I
rrm
; T
j
= 25˚C
and 150˚C
Fig.9. Transient thermal impedance Z
th
= f(t
p
)
100
Cd / pF
BY329
10
1
1
10
VR / V 100
1000
Fig.8. Typical junction capacitance C
d
at f = 1 MHz
;
T
j
= 25˚C
September 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BY329 series
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
3,0 max
not tinned
3,0
15,8
max
13,5
min
1,3
max
1
(2x)
2
0,9 max (2x)
0,6
2,4
5,08
Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.200
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
